Development of Compound Semic onductor Wafer and Device Bonding

【中文文摘】半导体晶片直接键合技术已成为半导体工艺的一门重要技术 ,它对实现不同材料器件的准单片集成、光电子器件的性能改善和新型半导体器件的发展起了极大的推动作用。文中详细叙述了近十年来 - 族化合物半导体键合技术的主要实验方法 ,并对各种键合方法的优缺点进行了比较 ,结合自己的工作对化合物半导体的键合机理和界面特性做了总结 ,针对目前的研究工作和应用做了展望 【英文文摘】Semiconductor wa f er direct bonding is a important techniq ue for integrating devices, improving th e performance of optoelectronic devices and making new devices. This paper prese nts the innovative wafer bonding methods of compound semiconductors, analyses th e advantages and disadvantages of variou s mehtods, then discusses the bonding me chanics and the generic nature of the in terfaces. Finally, examples of bonded de vices are presented.国家自然科学基金资助 (项目编号 :60 0 0 60 0 4

Interface of Si/Si Directly Wafer Bonding

【中文文摘】通过三步直接键合方法实现了 Si/ Si键合。采用 XPS、FTIR、I-V、拉伸强度等手段对 Si/ Si键合结构的界面特性作了深入广泛的研究。研究结果表明 ,高温退火后 ,在键合界面没有 Si-H和 Si-OH网络存在 ,键合界面主要由单质 Si和不定形氧化硅 Si Ox 组成。同时 ,研究还表明 ,I-V特性和键合强度强烈地依赖于退火温度。 【英文文摘】The Si/Si bonding has been achieved by three-step direct wafer bonding technology. Interfacial characteristic has been widely investigated by the X-ray photoelectron spectronscopy (XPS), Fourier transform infrared spectrum (FTIR),I-V and tensile strength. The results show that there are no infrared absorbtion peak related to the Si-H bonding and Si-OH bonding in the interface at high temperature, and the interface is made up of Si and SiO_x. In addition, the researches indicate that both I-V characteristic and bonding energy strongly depend on annealing temperatu re.国家基金 (项目编号 :6 0 0 0 6 0 0 4);; 国家重点基金 (项目编号 :6 0 336 0 1 0 )项目支

FTIR and XPS Analysis of Directly Bonded Si/Si Interface

【中文文摘】通过新颖的键合方法实现了Si/Si直接键合。采用傅里叶红外透射谱(FTIR)对Si/Si键合界面进行了研究,结果表明,高温退火样品的界面组分为Si和O,无OH和H网络存在。X射线光电子谱(XPS)测试结果进一步表明,界面主要为单质Si和SiOx混合网络,且随着退火温度的升高,界面层Si-Si直接成键的密度也越高。 【英文文摘】The Si/Si direct bonding has been achieved by a new bonding technology. Fourier transform infrared spectrum(FTIR) and X-ray photoelectron spectroscopy(XPS) are used to analyze the interface of Si/Si bonding. The results show that there are notinfrared absorbtion peak related to the Si-H bonding and Si-OH bonding in the interface at high temperature, and the interface is consisted of Si and SiO_x. In addition, the research indicates also that the Si/Si bonding density is increased with the increase of bonding temperature

Recent Developments in Radiationless Transitions

在本文中,我们将介绍运用第一性原理计算包含非谐效应或势能面锥形交叉情况下内转换速率的最新工作。我们同时计算了包含非谐效应的分子吸收和发射光谱,以检验量子化学方法计算得到势能面的准确性。势能面的锥形交叉对内转换过程的影响是学界广泛关注的焦点。本文将介绍如何在内转换速率计算的过程中考虑势能面锥形交叉的影响,并将之运用于吡嗪分子。本文运用绝热近似理论处理了另外一个重要的无辐射过程,分子的振动驰豫过程,并将这个理论应用于水二聚体和苯胺的振动弛豫速率的计算。In this paper,we introduce recent works on the mathematical treatments and the first-principle calculations concerning the internal conversion rates for the cases with anharmonic potentials,and conical intersecting potentials.The simulations of absorption and emission spectra with anharmonic effects are also presented to check the validity of the potential energy surfaces obtained from the quantum chemical calculations.The effect of conical intersection on internal conversion has attracted considerable attention.In this paper a different approach is proposed and applied to pyrazine.Another important non-radiative process,molecular vibrational relaxation,is also treated by applying the adiabatic approximation to the ab initio anharmonic potential energy surfaces.The vibrational relaxation rates in water dimer and aniline are chosen to demonstrate the calculation

Study of Si/Si and Si/InP direct bonding

晶片的键合技术由于方法的简单、灵活及不受材料结构、晶向、点阵结构限制而受到了人们的重视，在微机械电子器件以及新一代的光电器件的制备都得到了广泛的研究和应用。Si/Si直接键合技术已经被大量的应用在质量和工艺检测，环境监测，生物医学分析和航空航天等领域，是应用最广泛的技术之一。同时由于Si在InP材料激光器波长范围内透明而使得而Si/InP键合技术对于实现高效光电集成有特别重要的意义。然而由于人们对它们的界面特性、电学特性的了解仍不够充分，使得直接键合技术在微电子学和光电集成电路上的进一步应用受到影响。基于这种现象，本论文对Si/Si、Si/InP键合做了研究。内容可分为两大部分，前三章为Si/...Wafer bonding technique is attached importance for its flexibility, simpleness and not limited by structure, orientation and lattice construction of materials, and thus widely used in fabrication of both micro-electro-mechanic and optoelectronic elements. Now silicon direct bonding method is one of the most widely used techniques in fields such as quality and process control, environmental monitor...学位：理学硕士院系专业：物理与机电工程学院物理学系_凝聚态物理学号：20002400

Research and Progress of Silicon Direct Bonding

【中文文摘】硅片直接键合技术是一种简单易行的硅片熔合技术,由于该技术不受材料的结构、晶向和点阵参数的影响,因而得到了广泛的应用。介绍了硅片直接键合的方法和键合模型,并简单介绍了硅片直接键合技术的应用。 【英文文摘】Silicon direct bonding is a simple and applicable technique for the fusion of two silicon wafers. It has been widely used for that it won't be influenced by the surface structure, crystal orientation and lattice parameter. This article introduces different methods and models of silicon direct bonding, as well as the applications of silicon direct bonding.国家自然基金(60006004

Si/Si直接键合界面性质的研究

通过三步直接键合方法实现了Si/Si键合.采用XPS、FTIR、I-V、拉伸强度等手段对Si/Si键合结构的界面特性作了深入广泛的研究.研究结果表明,高温退火后,在键合界面没有Si-H和Si-OH网络存在,键合界面主要由单质Si和不定形氧化硅SiOx组成.同时,研究还表明,I-V特性和键合强度强烈地依赖于退火温度

Study of Si/InP Wafers Bonding Interface

【中文文摘】应用疏水处理方法成功实现了Si/InP的键合,然后通过对InP和Si的表面XPS能谱分析得到界面信息,从而了解键合机理。I-V曲线也反应了键合界面的性质,通过450、550℃退火样品的伏安特性可知道,对于InP/Si键合结构而言,退火温度与界面特性应该存在最佳值。 【英文文摘】Bonding of Si/InP wafers is attached importance to the fabrication of optoelectronic elements. The bonding of Si/InP wafers is successfully realized by using hydrophobic surface cleaning method. And then the interfacial information can be known from XPS spectrum, from which the bonding mechanism can be understand. The interfacial quality is also reflected through Ⅰ-Ⅴ curves. Compared Ⅰ-Ⅴ performance at different temperature for Si/InP bonding structure, interface quality should have a optimal value with the rising temperature because of different thermal coefficients国家自然科学基金(60006004)

Electrical measurement and simulation of Si/Si bonding structure

【中文文摘】研究Si/Si键合的电学性质对于界面研究和微电子器件的制备有着重要意义。分析了亲水处理方法键合的不同Si/Si键合结构的I-V特性,然后用SOS模型对n-Si/n-Si的C-V特性做了计算机辅助模拟,并和实际C-V曲线比较得出了平带电压VFB和界面态密度Din,这些结果对于键合的界面性质的了解和研究都是有意义的。 【英文文摘】 Understanding of electrical performance for Si/Si bonding structure is of great importance for both study of interface and fabrication of micro-electronic elements. We firstly analyzed I-V performance for different Si/Si bonding structures, and then using SOS model made capacitance curve-fitting for n-Si/n-Si structure. Comparing theoretical curve with experimental data, we got shifting voltage VFB and interfacial states density Din. These results availed to study the interface of silicon bonding structure.国家自然科学基金资助(60006004