47 research outputs found

    Electrocatalytic Oxidation of Formic Acid on Pd/Ni Heterostructured Catalyst

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    通过两步还原法制备了Pd/Ni双金属催化剂.由于金属Pd原子在先行还原的Ni纳米粒子表面的外延生长以及其在Ni表面及Pd表面生长表现出的吉布斯自由能差异,最终导致了异结构Pd/Ni纳米粒子的形成.高分辨电子透射显微镜结果证实了异结构的存在,然而X射线衍射测量表明Pd/Ni纳米粒子具有类似于Pd的面心立方结构.制备的Pd/Ni纳米粒子与同等条件下合成的Pd纳米粒子相比对甲酸氧化呈现了更高的电催化活性,而且电催化稳定性也要明显优于纯Pd纳米粒子,证明Pd/Ni双金属催化剂是可选的直接甲酸燃料电池阳极催化剂.双金属催化剂对甲酸氧化电催化活性和稳定性增强可能是Ni原子的修饰改变了Pd粒子表面配位不饱和原子的电子结构所致.A Pd/Ni bimetallic nanostructured electrocatalyst was fabricated via a two-step reduction route. Owing to an epitaxial growth of Pd atoms on the surface of Ni nanoparticles, heterostructured Pd/Ni nanocomposites were formed and verified by high resolution transmission electron microscopy combined with energy-dispersion X-ray spectroscopy. X-ray diffraction confirmed that the as-prepared Pd/Ni nanocomposites possessed a single face-centered-cubic (fcc) Pd structure, probably due to a weaker diffraction intensity of metallic Ni and/or overlapping by that of Pd. The intrinsic catalytic activity on the Pd/Ni is higher than that on the Pd. Moreover, the durability of formic acid oxidation on the Pd/Ni was much enhanced over the Pd nanoparticles. The change in electronic structure of the surface coordination unsaturated Pd atoms and the possible dissolution of Ni species from the Pd/Ni heterostructure may account for such an improved durability for formic acid oxidation.This work was supported by the National Basic Research Program of China (973 Program) (No. 2012CB932800), the Natural Science Foundation of China (No. 21073219), Shanghai Science and Technology Committee (No. 11DZ1200400) and the Knowledge Innovation Engineering of the CAS (No. 12406, 124091231).This work was supported by the National Basic Research Program of China (973 Program) (No. 2012CB932800), the Natural Science Foundation of China (No. 21073219), Shanghai Science and Technology Committee (No. 11DZ1200400) and the Knowledge Innovation Engineering of the CAS (No. 12406, 124091231).作者联系地址:1. 中国科学院上海高等研究院,上海 201210;2. 中国科学院研究生院,北京 100039Author's Address: 1. Shanghai Advanced Research Institute, Chinese Academy of Sciences CAS, Shanghai 201210, China; 2. Graduate School of the CAS, Beijing 100039, China通讯作者E-mail:[email protected] & [email protected]

    InAs/GaAs自组织量子电的DLTS谱

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    将DLTS用于对InAs/GaAs QD结构样品的测量,测定了QD能级发射载流子的热激活能;获得了QD能级俘获电子过程伴随有多声子发射(MPE),QD能级存在一定程度的展宽,以及在某些特定的生长条件下,存在亚稳生长构形的实验证据。结果表明:DLTS在QD体系的研究中有其特有的功能

    扫描隧道显微镜对InAs/GaAs自组织生长量子点的准原位研究

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    报道了用MBE-SPM联合系统对InAs/GaAs量子点进行准原位研究的初步结果。STM图像表明,在对n~+-GaAs衬底进行脱氧处理后,通过生长GaAs缓冲层能有效的改善表面质量。在缓冲层上继续生长2单原子层InAs后形成了量子点。SPM与透射电子显微镜给出的量子点形貌的异同在文中也给出了合理的解释,该研究工作的进一步深入将对自组织生长量子点的生长机理的理解和样品质量的提高有重要意义

    超晶格电子辐照缺陷的亚稳态特性

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    用深能级瞬态谱(DLTS)系统地研究了GaAs(50A)/GaAlAs(50A)超晶格中的电子辐照缺陷,证实其亚稳态特性的存在,对其恢复温度、转变条件进行了研究,指出在体材料中不能观察到电子辐照缺陷亚稳态的原因

    GeSi/Si应变结构内应力纵向分布

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    利用深能级瞬态谱(DLTS)研究分子束外延n-Ge_0.2)Si_(0.8)/Si应变超晶格,观察到两个与位错有关的深中心,其中一个能级位置在E_C=0.42eV,另一个随着偏压变化而发生明显 的移动,深能级位置从E_C=0.21eV变化到E_C=0.276eV,我们认为是内应力引起的。取该深能级的流体静压力系数γ=6.59meV/Kba,求出超晶格中的应力分布与计算值符合较好。在此基础上提出了一种通过测量深能级随应力移动效应来确定应变结构内应力纵向分布的新方法

    GeSi/Si应变超晶格退火及离子注入研究

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    用深能级瞬态谱(DLTS)研究退火及离子注入对分子束外延生长的GeS/i/Si应变超晶格性质的影响,观察到3个与位错有关的深中心和1个表层内的深中心,退火和离子注入都使得这些深中心的浓度增加数倍,说明GeSi/Si应变超晶格不适应做过多的热处理。测定Pd~+注入在GeSi/Si超晶格的杂质能级为E_C=0.28eV,与体Si中的Pd杂质能级一致
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