基于TH7122.1芯片的无线数据传输模块设计

TH7122.1芯片是一款由比利时Melexis公司开发的低功耗单片集成无线收发芯片。主要介绍该芯片的功能特点,并以该芯片为基础设计一种低成本的半双工无线数据传输模块。调试结果表明,所实现的模块无线数据通信稳定可靠。利用该模块可以实现结构简单、性能稳定的无线数据通信系统,在某些短距离无线应用场合具有实用价值,对其他无线应用系统的设计具有参考价值

Fabrication and Characteristics of GaN-based Blue VCSEL

利用金属有机物气相沉积技术(MOCVD)在(0001)蓝宝石衬底上生长了Ga N基垂直腔面发射激光器(VCSEL)的多量子阱腔层结构。X射线衍射测量显示该多量子阱具有良好周期结构和平整界面。运用键合及激光剥离技术将该外延片制作成VCSEL,顶部和底部反射镜为极高反射率的介质膜分布布拉格反射镜(DBR)。在室温、紫外脉冲激光的泵浦条件下,观察到了VCSEL明显的激射现象,峰值波长位于447.7 nm,半高宽为0.11 nm,自发辐射因子约为6.0×10-2,阈值能量密度约为8.8 m J/cm2。在大幅度降低制作难度的情况下,得到目前国际最好结果同样数量级的激射阈值。降低器件制作难度有利于制备的重复性,有利于器件的产品化。Ga N-based multiple quantum wells( MQWs) were epitaxially grown on( 0001)-oriented sapphire substrate by metal organic chemical vapor deposition( MOCVD) technique. X-ray diffraction measurements indicated that the MQWs had good periodic structure and smooth interface. By employing bonding and laser lift-off techniques,the MQW structure was sandwiched between two high reflectivity dielectric distributed Bragg reflectors( DBRs),forming a vertical-cavity surfaceemitting laser( VCSEL). Under optical pumping,the VCSEL achieved laser action at room temperature with a threshold pumping energy density of about 8. 8 m J / cm2. The laser emitted a blue light at 447. 7 nm with a narrow linewidth of 0. 11 nm,and had a high spontaneous emission factor of about 6. 0 × 10- 2.国家自然科学基金(61307115);; 福建省教育厅A类科技项目(JA12249);; 厦门理工学院高校高层次人才基金(YKJ11026R);; 福建省自然科学基金(2013J05104)资助项

The EFFect of Preparation Conditions on the Properties of SnO_2/Si

研究了沉积温度、SnCl4溶液的浓度、掺Pd等对SnO2/SI光电压的影响，测量了SnO2/SI的光电压谱，得出最佳的制备条件，进行了有关计算和分析。Some tin oxide Films are deposited by CVD method on single crystal silicons.The eFFect of diFFerent deposition conditions, such as diFFerent substrate temperatures, SnCI4 solutions and Pd doping,on photovoltaic properties of the Films are studied.The best preparation conditions are obtained.Relative parameters is calculated From the photovoltaic spectra.国家自然科学基金;福建省自然科学基

Study of photovoltaic characteristics of SnO_2/Si

采用CVd方法在硅单晶上制备SnO2薄膜，对不同硅衬底及在不同温度下淀积SnO2制得SnO2/SI进行光电压谱的测量，得出最佳的制备温度；采用类金属半导体接触模型，推导出有关计算公式，计算得出其介面复合速度和异质结势垒宽度等参数。Tin oxide Films are deposited by CVD method on single crystal silicon.The eFFects of diFFerent deposition temperatures and substrates on the photovoltaic characteristics are studied.Using the metal-semiconductor contact model,the calculation Formulas are derived.The diFFusion length of minority carrier,interFace recombination speed and heterojunction barrier width are calculated.国家自然科学基金;福建省科学基

Study of the Photovoltaic Properties of Tin Oxide/Porous Silicon/Silicon

测量了二氧化锡（SnO2）/多孔硅（PS）/硅（SI）的光电压谱，分析表明：在SnO2/PS/SI材料中存在着两个异质结；当样品吸附还原性气体时，其光电压明显下降。当样品在1%液化石油气的氛围时（相对于空气），光电压减少了16.4%-27.5%；在1%CO氛围时，减少了8.1%-19.4%；在1%H2氛围时，减少了12.1%-14.9%，因此SnO2/PS/SI可作为一种新的敏感元件。文中还对测量结果进行了讨论分析。The photovoltage spectra of Tin Oxide/Porous Silicon/Silicon(SnO2/PS/Si)have been studied.It is shown that there exist two heterojunctions inSnO2/PS/Si structure.The photovoltage decreases evidently when the sample absorbes reducing gas.The photovoltage decreases by 16.4-27.5 percent when theabsorbed gas contains 1 percent liquiFied petroleum, by 8.1 19.4 percent when thesample absorbes gas with 1 percent CO,and by 12.1-14.9 percent when the sample absorbes gas with 1 percent H,.The experimental results indicate that SnO2/PS/Si is a good material For gas sensor.The mechamism For the gas absorption ofSnO2/PS/Si is discussed.国家和福建省自然科学基

Study of Parameters of Neutron-Irradiated Single Crystal Silicon

在不同温度和红外光照下，测量了经中子辐照的单晶硅表面光电压，确定了其深能级的位置和少子扩散长度；由双能级复合理论，推导了中子辐照单晶硅的深能级复合中心和寿命的计算公式；计算了热中子辐照和高能中子辐照单晶硅后的深能级密度、费米能级和其他有关重要参数。The photovoltage spectra of neutron-irradiated single crystal silicon under inFra-red illumination and at low temperatures are measured.The deep level and minority carrier diFFusion length are determined.By the double-level recombination model,the statistics Formulas of the deep level and liFetime are derived For neutron-irradiated single crystal silicon.Some important parameters of the silicon irradiated with high energy and thermal neutron are calculated respectively.国家自然科学基

Isolation of Total Cellular DNA from Three Species of Lauraceae

为了从富含次生代谢物的樟科植物肉桂、锡兰肉桂、阴香中获得高质量DNA ,研究和改进了CTAB法、高盐低pH法和尿素法。改进方法包括 :1)在裂解液中加入 2 % β -巯基乙醇和 5 %PVP ,以防止氧化褐变的发生 ;2 )在酚 :氯仿抽提前加入 1 5mol L醋酸铵冰浴处理 ,能降低DNA的黏性。所得DNA的质量和产量经电泳、紫外吸收A2 60 A2 80 、PCR扩增和限制性内切酶酶切检测 ,结果表明改进法提取的DNA质量要比常规法的好。其中改进的CTAB法获得的DNA纯度最高 ,能用于PCR扩增和限制性内切酶酶切 ,是提取这 3种樟科植物总DNA的最佳方法。CTAB method,low pH medium with high salt method (LPHS),and urea method were used and improved to extract high-quality DNA from Lauraceae plant Cinnamomum cassia Presl.,C.zeylanicum and C.burmannii,which are rich in secondary metabolites.The modified protocols involved two key steps:1) adding 2% β-mercaptoethnoal and 5% polyvinylpyrrolidone (PVP) in extraction solution to inhibit the oxidization of polyphenols;2) treating with 1.5?mol/L NH 4Ac and incubation at 0℃ prior to supernatant extraction with phenol:chloroform to lower the viscosity of DNA.The yields and qualities of DNA were analyzed by electrophoresis,ratios of A (260)/A (280),PCR amplification and restriction digestion.The results showed that the modified methods are better than the original ones in terms of the quality of total DNA.Among them,the modified CTAB method,which can produce high quality DNA suitable for PCR amplification and restriction digestion,is the best one for DNA extraction from three species of Lauraceae.厦门大学预研基金资

过氧化物还原酶3参与肾透明细胞癌发生与发展的分子机制

【目的】探讨肾透明细胞癌组织中硫氧还蛋白依赖的过氧化物还原酶3（PRDX3）的表达与肾透明细胞癌发生发展的关系。【方法】本研究首先在16例肾透明细胞癌组织及癌旁组织中验证了PRDX3的表达。根据表达量构建了786-O的PRDX3过表达细胞系及敲低表达细胞系，考察了PRDX3过表达和敲低表达后，肿瘤细胞的生长情况。通过pull-down试验联合LC-MS/MS技术寻找PRDX3的相互作用蛋白。初步探究了PRDX3与过氧化物酶1（PRDX1）的相互作用关系及PRDX3参与肾透明细胞癌发生发展的机制。【结果】16例肾透明细胞癌组织样本的western blot检测结果表明，有14例样本PRDX3下调表达，下调均值1.78倍左右。成功筛选到PRDX3过表达的786-O单克隆细胞系和对照细胞系［786O-PRDX（3+）和786O-PRDX（3-）］和PRDX3敲低表达的786-O单克隆细胞系和无意义序列对照细胞系（786O-PRDX3KN和786O-PRDX3NCi）。qPCR和western blot结果表明，相比786O-PRDX（3-）组，786O-PRDX（3+）组在mRNA水平过表达约2.1倍，在蛋白水平过表达约1.8倍；相比786O-PRDX3NCi组，786O-PRDX3KN组在mRNA水平低表达约0.48倍，在蛋白水平低表达约0.51倍。CCK-8试验表明，相比786O-PRDX（3-），786O-PRDX（3+）细胞生长速率明显降低。但敲低PRDX3的表达后，敲低组和其对照组细胞的生长速率却无显著性差异。Pull-down试验发现PRDX3可能与PRDX1存在相互作用。结合质谱分析及数据库检索，发现PRDX3通过二硫键与PRDX1结合并发挥作用，分别通过plink软件鉴定到二者可信的结合位点，初步探讨了PRDX3参与肾透明细胞癌发生发展的可能机制。【结论】PRDX3在肾透明细胞癌组织中下调表达，可能参与了肿瘤的发生发展。提高PRDX3的表达水平，能显著降低肿瘤细胞的生长速率。基于PRDX3蛋白，可能开发针对肾透明细胞癌的靶向药物

Terahertz Spectroscopy and Imaging of Frozen Biological Samples

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光伏谱方法研究半导体性质

本工作采用光伏谱方法详细研究了GaAs/AlAs超晶格价带子带与导带子带之间的光跃迁和状态密度分布以及超晶格光伏效应的机理，系统地研究了金掺杂和电子辐照对高阻硅单晶性能的影响，并提出了一种测量半导体深能级的新方法——双光束光伏法。学位：理学博士院系专业：物理与机电工程学院物理学系_半导体物理与器件学号：MJ00004