8 research outputs found

    果蝇成虫复眼免疫电镜样品的制备及观察

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    Research progress in roles of gut microbiota and bile acid metabolism in development and progression of NAFLD

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    随着肥胖及代谢综合征的流行,非酒精性脂肪性肝病的患病率逐年递增,在该病的发生和发展过程中,肠道菌群和胆汁酸代谢均发挥重要作用。讨论了肠道菌群和胆汁酸代谢之间的关系,重点强调了肠道菌群、胆汁酸和胆汁酸受体在非酒精性脂肪性肝病发生发展的过程中所起到的作用。With the prevalence of obesity and metabolic syndrome,the incidence of nonalcoholic fatty liver disease(NAFLD) is increasing year by year.Studies have uncovered the important roles of gut microbiota and bile acid metabolism in the development and progression of NAFLD.The roles of gut microbiota,as well bile acid and bile acid receptors,in the development and progression of NAFLD are highlighted.艾滋病和病毒性肝炎等重大传染病防治国家科技重大专项(2012ZX10002004-011); 天津市科技计划项目(13RCGFSY19200

    Communication method based on wireless Hart adapter terminal

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    本发明涉及一种工业无线网络WIA-PA与有线Hart适配器相结合的无线Hart适配器终端的通信方法。无线节点上电入网后,主动的周期性的询问与其连接的Hart表的地址信息,直至Hart表应答,并存储Hart表的地址信息;通过WIA-PA网络无线节点主动的周期性的通过Hart适配器询问相应的Hart命令,将适配器所连接的各种厂商各种功能的Hart仪表的相应应答信息接收至无线节点,再经由WIA-PA网络传输至无线网关。本发明采用无线节点主动上传仪表Hart信息的方式,每1秒钟上传1次,由WIA-PA网络中无线网关存储并实时更新仪表Hart信息,确保上位机组态软件中的仪表Hart信息的实时性

    cERL-FELの建設

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    KEKのエネルギー回収型ライナックの原理実証機, cERLにおいてFELの建設が2019年10月から開始された. このcERL-FEL計画は波長10 – 20 μmの中赤外領域における発振を目的とし, ビーム・エネルギー17.5 MeVに対して, 周期長24 mm, 長さ3 mのアンジュレータを2台並べて配置する. バンチ電荷が60 pCの時、波長20 µmにおいて約1 µJのパルスエネルギーの光が発生, 繰り返しが81.25 MHzの電子銃レーザーを用いたCW運転時には, 平均レーザー出力として最大100 W程度が期待される. アンジュレータ1号機の設置を伴う第1次建設が2020年3月に終了し, 4月から5月までの2ヶ月間でアンジュレータ2号機の設置を行う第2次建設が実施された. 本発表では, これまでのcERLの構成を踏まえ, 新たに建設されたcERL-FELについて説明を行う.第17回日本加速器学会年

    Effect of Concentrator Irradiation on the Carrier Mobility of pand n-Type Single Crystal Si by Hall Measurements

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    We have carried out the Hall measurement of Si wafer to investigate the dominant scattering mechanism when the concentrator irradiation condition. From the Hall measurements with keeping the sample temperature constant, measured mobility decreased with increasing the sunlight concentration up to 3.0 SUN. It was also found that the ratio of mobility decrease for p-type Si was larger than that for n-type Si. Since the decrease factor is considered to be photo-generated carriers, we calculated the photo-generated carrier concentration assuming both electron and hole exist. We could concluded that decrease of mobility by the concentrator irradiation are due to not the phonon scattering with increasing sample temperature but the increase of both electron and hole concentrations.departmental bulletin pape
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