Effect on Photoluminescence Intensity of Porous Silicon Processing by a Wet Oxidized Technology

【中文文摘】在适当条件下氧化多孔硅是提高多孔硅发光强度的良好途径。首次采用含CH3CSNH2的HF酸水溶液作为氧化剂对初始多孔硅进行了湿法阳极氧化,大大改善了多孔硅的发光强度,并研究了氧化电流密度、氧化温度、氧化时间等一系列因素对氧化多孔硅光致发光强度的影响。实验发现,在电流密度1mA/cm2,氧化液温度60℃,氧化时间为10min的条件下,可以获得最强光致发光;在此最优条件下得到的氧化样品较初始样品发光增强了18倍。 【英文文摘】Oxidizing porous silicon in proper condition is a good approach to improve PS photoluminescence intensity.We for the first time using electrolyte containing CH_3CSNH_2 to oxidize initial PS,which boost up photoluminescence intensity of PS greatly.We also studied oxidizing current density,oxidizing temprature,oxidizing time etc.It is testified that the best intensity of PL can be obtained when oxidizing for 10 minutes in 60 ℃ oxidizing solution using 1 mA/cm~2 current density.In these conditions we can obtain best photolumine scence intensity which is 18 time s than that of original porous silicon

The Study Of PL Character Of Porous Silicon Oxidized By A New Type Of Wet Anode Technique

将成熟的硅基微电子技术与光电子技术结合起来，实现光电子集成是现代信息技术发展的主要方向，但Si间接能带结构决定其发光效率低下，这成为实现硅基光电子集成的主要障碍。室温下多孔硅(PS)可见光发光现象的发现为硅基光电领域开辟了广阔前景。然而，PS发光强度弱以及发光稳定性差是目前阻碍其获得更大规模器件应用的两大问题，因此寻找一种有效后处理方法，从而解决多孔硅发光强度与稳定性问题成为人们多年来关注的重要课题。本文采用一种新型湿法阳极氧化对多孔硅进行氧化钝化，这种氧化方法的优势在于可控性好、多孔硅硅丝的机械强度增强、可操作性和可重复性较好，且样品发光强度（增强了18倍）以及稳定性都有了明显提高与改善。 ...Falling mature silicon basic micro-electronics technique and photoelectron technique together and realizing photoelectron integration is a mostly developp- ing direction of the communication technique in modern times. Whenas,the lowliness of luminescence efficiency of Si what is caused by it’s undirectness energy band is a mostly obstruction in silicon basic photoelectron integration tech. The di...学位：理学硕士院系专业：物理与机电工程学院物理学系_凝聚态物理学号：20012401

New Anodic Oxidized Technology OF Porous Silicon

【中文文摘】在适当条件下氧化多孔硅是提高多孔硅发光强度的良好途径,提出了一种新型阳极氧化方法,并探讨了该方法所涉及的阳极氧化条件。采用含CH3CSNH2的HF酸水溶液作为氧化剂对初始多孔硅进行了湿法阳极氧化,发现氧化使多孔硅光致发光性质得到极大改善,进而研究了氧化电流、氧化温度、氧化时间等一系列因素对氧化多孔硅光致发光强度的影响,并给出了合理解释。实验发现,在1mA,10min,60℃的氧化条件下,采用阳极氧化技术使多孔硅发光强度增强了18倍。 【英文文摘】Oxidizing porous silicon in proper condition is a good approach to improve PS photoluminescence intensity.The article for the first time raised a new anodic oxidized technology of PS.We used electrolyte containing CH_3CSNH_2 to oxidize initial PS, and found that this method can improve the quality of photoluminescence, it can not only enhance the PL intensity greatly, but also increase the photoluminescence stability. Then we studied the oxidizing conditions(current, time, temperature etc.)which affect photoluminescence intensity and stability of PS and gave reasonable explanations. The small oxidizing current can repair the nanostructure of PS , the appropriate oxidizing time can limit the probability of nonradiative recombination , while the optimum oxidizing temperature is propitious to the transit of charge which can make the concentration of electrolyte balanceable , hence , the photoluminescence of oxidized PS is improved evidently. We discovered that the anodic oxidized technology of PS made the integral intensity of photoluminescence enhanced 18 times when in the optimum oxidized conditions of (1mA ,10 min ,60 ℃)国家重点自然科学基金资助项目(60336010

A New Method for Wet Passivating of Porous Silicon

采用硫代乙酰胺的HF酸水溶液作为氧化剂对初始多孔硅进行钝化处理,改善了多孔硅表面结构并提高了发光强度.同时研究了钝化电流,钝化温度和钝化时间等一系列因素对钝化多孔硅光致发光强度的影响.实验发现,在60℃恒温下,对样品通电流1mA/cm2,进行10min的钝化处理可以获得最强的光致发光,发光强度比初始样品发光强度增强了一个数量级.另外,通过傅立叶红外吸收谱(FTIR)以及X射线光电子能谱(XPS)测试分析,探讨了钝化处理使得多孔硅发光强度提高的原因.国家自然基金项目(60336010)资

Study of Silica-base ZnS Thin Film by Means of XPS

应用X射线光电子能谱(XPS)研究Si基ZnS:Cu,Er薄膜的化学元素组成、分布和价态, 认为Cu元素只有少数部分进入晶格中替代Zn2+起激活剂的作用,Er元素在ZnS基质中分布不均匀,且会与氧结合。PL测试发现样品发绿光,主要发光峰出现劈裂,对研究薄膜中的杂质中心、实现Si基发光有参考意义。福建省自然科学基金(A0110006) 厦门大学自选课题基金(07007