CMOS RF 모델링을 위한 기판저항의 물리적 특성에 관한 연구

학위논문(석사) - 한국과학기술원 : 전기및전자공학전공, 2001.2, [ ii, 40 p. ]A simple parameter extraction method of substrate resistance is proposed. And physical behaviors of the substrate resistance for CMOS RF modeling such as the drain bias dependency, the effect of the body contact width ans STI (Shallow Trench Isolation) distance are observed. The analyses of simulation results and measurement data are described. And validation is carried out then drawn conclusions.한국과학기술원 : 전기및전자공학전공