A novice's guide to a calculation of the Bockstein spectral sequences

departmental bulletin pape

Observation of B̅0→D(*)0pp̅

journal articl

コウゾウ ビンカン ナ ポリフルオレン オ ケイコウ プローブ ニ シタ γ-アルミナ エノ ジハツテキ エキソウ ブツリ キュウチャク ト コウジ コウゾウ ニ カンスル ケンキュウ

奈良先端科学技術大学院大学博士(工学)doctoral thesi

第2章 研究開発の経緯(I. SSH3年次の取り組みの概要)

2010-01-25departmental bulletin pape

0812-9869-9940 (WA), Jual Keranda Mayat Wonokeling

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Relative CCL3 (A), CCL4 (B) and CCL5 (C) expression levels in GALT tissues at different stages of SHIV_SF162P4 infection (n = 5).

<p>PID 0 was used as the calibrator (value = 1).</p

SHIV_SF162P4 loads in plasma (A), CD4+ T cell counts in peripheral blood (B), relative CCL3 (C), CCL4 (D) and CCL5 (E) gene expression levels in PBMCs at PID 0-180 with SHIV_SF162P4.

<p>Each point on the graph represents the mean fold change in gene expression relative to pre-infection level±SE (n = 5).</p

Triple-label confocal microscopy of CCL4+ cells in mesenteric lymph nodes obtained from control (PID 0) and SHIV_SF162P4-inoculated macaques at PID 14.

<p>T lymphocytes (CD3+) are red, CCL4+ cells are green, SHIV_SF162P4-infected cells (p28+) are blue. Overlap of red and green fluorescence is seen as yellow, overlap of red and blue as pink. Higher number of CD3+CCL4+ cells was seen at PID 0 than at PID 14 (<a href="http://www.plosone.org/article/info:doi/10.1371/journal.pone.0000726#pone-0000726-t001" target="_blank">Table 1</a>) while CD3+p28+ cells could be seen at PID 14 but not at PID 0 indicating the successful spread of virus into GALTs following mucosal inoculation.</p

Comparison of SHIV_SF162P4and SHIV_Ku1 primary infection in peripheral blood.

<p>Viral loads in plasma (A), CD4+ T cell counts (B), Fold-changes of CCL3, CCL4 and CCL5 gene expression levels in SHIV_SF162P4- and SHIV_Ku1–infected macaques at PID 0 vs. PID 14 (C) (n = 5 for each group). Negative sample cut-off for viral load measurements in plasma was <30 copies/ml e.g. PID 0 value.</p

半導体一液体接合型太陽電池の基礎的研究 （第２報） -n-Si‐電解質溶液?Pt系の場合-

application/pdfThe semiconductor-liquid junction solar cells using polycrystaline titanium oxide (n-type semiconductor) were previously reported by the authors. In this paper, the electrical properties of cells using n-Si are described with several different surface treatments. The initial etching in HF＋HNO_3 solution for 20 sec and in HF solution for 60 sec after baking at 1000℃ for 2 hr in air to dope boron from the surface of n-Si was the most preferable surface treatment for converting solar energy to electric energy. It was found that the boron thermally doped n-Si was very effective for surface stabilization, and that boron-doped and paradium-coated n-Si photoelectric-chemical cells had a high solar to electric power conversion efficiency of 4％. The evaporated Pd film was heat-treated at 400℃ for 1 hr under 2×10^ Torr, and this treatment served to prolong the life time of the electrodes.departmental bulletin pape