6 research outputs found
An Algorithm to Correct the Sensitivity Distribution of a Retarding Field Analyzer for Photoelectron Holography
Recently, we developed a retarding field analyzer (RFA) with high energy resolution and wide acceptance angles, which was installed at BL25SU in SPring-8, Japan. This apparatus enables us to measure photoelectron angular distributions (photoelectron holograms) with a solid angle of ±49° in a few minutes, and this approach is now being applied to measure the atomic arrangements of dopants and interfaces. However, correcting the sensitivity distribution of the measured images by the RFA is important in processing this data. The sensitivity distribution of the RFA is difficult to measure directly because it depends on the geometry of a sample, the kinetic energy of the photoelectrons, and so forth. Therefore, we developed an image processing algorithm to estimate the sensitivity distribution using spherical harmonics. This approach is more accurate than a Fourier transform and can efficiently correct the sensitivity distribution. Moreover, the algorithm can also be adopted in a wide variety of other applications in addition to RFA measurements.journal articl
Effects of Oxygen on Lattice Defects in Single-Crystalline Mg2Si Thermoelectrics
Lattice defect engineering has attracted attention due to its ability to develop thermoelectric materials with low thermal conductivity. For Mg2Si single crystals (SCs), Si vacancy (VSi) defects can be introduced and consequently result in the formation of dislocation cores. These lattice defects confer Mg2Si SCs with a lower thermal conductivity compared to Mg2Si polycrystals. To reveal a mechanism for the stabilisation of VSi in the Mg2Si SCs, we investigated the effects of oxygen (O) on lattice defects by performing electronic structure calculations, secondary ion mass spectrometry, X-ray photoelectron spectroscopy, and photoelectron holography. On the basis of these calculations, we predicted that O stabilised the formation of VSi when it was located at the Si site or at an interstitial site. All experiments confirmed the presence of O inside the Mg2Si SCs. However, O was suggested to be located not at the specific site in the crystal lattice of Mg2Si but at dislocation cores. The interaction between O and the dislocation cores in the Mg2Si SC is expected to immobilise dislocation cores, leading to the stabilisation of VSi formation.journal articl
Distribution of melon and Arabidopsis unigenes according to the Gene Ontology scheme for functional classification of gene products
<p><b>Copyright information:</b></p><p>Taken from "MELOGEN: an EST database for melon functional genomics"</p><p>http://www.biomedcentral.com/1471-2164/8/306</p><p>BMC Genomics 2007;8():306-306.</p><p>Published online 3 Sep 2007</p><p>PMCID:PMC2034596.</p><p></p
