Resistive switching effects on the spatial distribution of phases in metal-complex oxide interfaces

In order to determine the key parameters that control the resistive switching mechanism in metal-complex oxides interfaces, we have studied the electrical properties of metal / YBa2Cu3O7-d (YBCO) interfaces using metals with different oxidation energy and work function (Au, Pt, Ag) deposited by sputtering on the surface of a YBCO ceramic sample. By analyzing the IV characteristics of the contact interfaces and the temperature dependence of their resistance, we inferred that ion migration may generate or cancel conducting filaments, which modify the resistance near the interface, in accordance with the predictions of a recent model.Comment: 3 pages, 5 figures, to be published in Physica B. Corresponding author: C. Acha ([email protected]

Transport mechanism through metal-cobaltite interfaces

The resistive switching (RS) properties as a function of temperature were studied for Ag/La$_{1-x}$Sr$_x$CoO$_3$ (LSCO) interfaces. The LSCO is a fully-relaxed 100 nm film grown by metal organic deposition on a LaAlO$_3$ substrate. Both low and a high resistance states were set at room temperature and the temperature dependence of their current-voltage (IV) characteristics was mea- sured taking care to avoid a significant change of the resistance state. The obtained non-trivial IV curves of each state were well reproduced by a circuit model which includes a Poole-Frenkel element and two ohmic resistances. A microscopic description of the changes produced by the RS is given, which enables to envision a picture of the interface as an area where conductive and insulating phases are mixed, producing Maxwell-Wagner contributions to the dielectric properties.Comment: 13 pages, 5 figures, to be published in APL. Corresponding author: C. Acha ([email protected]

Non-volatile resistive switching in dielectric superconductor YBCO

We report on the reversible, nonvolatile and polarity dependent resistive switching between superconductor and insulator states at the interfaces of a Au/YBa$_2$Cu$_3$O$_{7-\delta}$ (YBCO)/Au system. We show that the superconducting state of YBCO in regions near the electrodes can be reversibly removed and restored. The possible origin of the switching effect may be the migration of oxygen or metallic ions along the grain boundaries that control the intergrain superconducting coupling. Four-wire bulk resistance measurements reveal that the migration is not restricted to interfaces and produce significant bulk effects.Comment: 4 pages, 4 figures, corresponding author: C. Acha ([email protected]

First-Order Insulator-to-Metal Mott Transition in the Paramagnetic 3D System GaTa4Se8

The nature of the Mott transition in the absence of any symmetry braking remains a matter of debate. We study the correlation-driven insulator-to-metal transition in the prototypical 3D Mott system GaTa4Se8, as a function of temperature and applied pressure. We report novel experiments on single crystals, which demonstrate that the transition is of first order and follows from the coexistence of two states, one insulating and one metallic, that we toggle with a small bias current. We provide support for our findings by contrasting the experimental data with calculations that combine local density approximation with dynamical mean-field theory, which are in very good agreement.Comment: 5 pages and 4 figures. Supplemental material: 2 pages, 2 figure

Electrical resistivity of the Ti4O7 Magneli phase under high pressure

We have measured resistivity as a function of temperature and pressure of Ti4O7 twinned crystals using different contact configurations. Pressures over 4kbar depress the localization of bipolarons and allow the study of the electrical conduction of the bipolaronic phase down to low temperatures. For pressures P > 40 kbar the bipolaron formation transition is suppressed and a nearly pressure independent behavior is obtained for the resistivity. We observed an anisotropic conduction. When current is injected parallel to the principal axis, a metallic conduction with interacting carrier effects is predominant. A superconducting state was not obtained down to 1.2 K, although evidences of the proximity of a quantum critical point were noticed. While when current is injected non-parallel to the crystal's principal axis, we obtained a logarithmic divergence of the resistivity at low temperatures. For this case, our results for the high pressure regime can be interpreted in the framework of interacting carriers (polarons or bipolarons) scattered by Two Level Systems.Comment: 9 Revtex pages, 12 EPS figures included, submitted to The European Physical Journal B. Contact author: C. Acha (e-mail address: [email protected]

Large memcapacitance and memristance at Nb:SrTiO3_{3} / La0.5_{0.5}Sr0.5_{0.5}Mn0.5_{0.5}Co0.5_{0.5}O3−δ_{3-\delta} Topotactic Redox Interface

The possibility to develop neuromorphic computing devices able to mimic the extraordinary data processing capabilities of biological systems spurs the research on memristive systems. Memristors with additional functionalities such as robust memcapacitance can outperform standard devices in key aspects such as power consumption or miniaturization possibilities. In this work, we demonstrate a large memcapacitive response of a perovskite memristive interface, using the topotactic redox ability of La$_{0.5}$Sr$_{0.5}$Mn$_{0.5}$Co$_{0.5}$O$_{3-\delta}$ (LSMCO, 0 $\leq$ $\delta$ $\leq$ 0.62). We demonstrate that the multi-mem behaviour originates at the switchable n-p diode formed at the Nb:SrTiO3/LSMCO interface. We found for our Nb:SrTiO$_{3}$/LSMCO/Pt devices a memcapacitive effect C$_{HIGH}$/C$_{LOW}$ ~ 100 at 150 kHz. The proof-of-concept interface reported here opens a promising venue to use topotactic redox materials for disruptive nanoelectronics, with straightforward applications in neuromorphic computing technology.Comment: 14 pages, 5 figures, to appear in Appl. Phys. Let

Interleukin-35-Producing CD8α(+) Dendritic Cells Acquire a Tolerogenic State and Regulate T Cell Function.

Dendritic cells (DCs) play a central role in shaping immunogenic as well as tolerogenic adaptive immune responses and thereby dictate the outcome of adaptive immunity. Here, we report the generation of a CD8α(+) DC line constitutively secreting the tolerogenic cytokine interleukin (IL)-35. IL-35 secretion led to impaired CD4(+) and CD8(+) T lymphocyte proliferation and interfered with their function in vitro and also in vivo. IL-35 was furthermore found to induce a tolerogenic phenotype on CD8α(+) DCs, characterized by the upregulation of CD11b, downregulation of MHC class II, a reduced costimulatory potential as well as production of the immunomodulatory molecule IL-10. Vaccination of mice with IL-35-expressing DCs promoted tumor growth and reduced the severity of autoimmune encephalitis not only in a preventive but also after induction of encephalitogenic T cells. The reduction in experimental autoimmune encephalitis severity was significantly more pronounced when antigen-pulsed IL-35(+) DCs were used. These findings suggest a new, indirect effector mechanism by which IL-35-responding antigen-presenting cells contribute to immune tolerance. Furthermore, IL-35-transfected DCs may be a promising approach for immunotherapy in the context of autoimmune diseases

High pressure effects in fluorinated HgBa2Ca2Cu3O(8+d)

We have measured the pressure sensitivity of Tc in fluorinated HgBa2Ca2Cu3O(8+d) (Hg-1223) ceramic samples with different F contents, applying pressures up to 30 GPa. We obtained that Tc increases with increasing pressure, reaching different maximum values, depending on the F doping level, and decreases for a further increase of pressure. A new high Tc record (166 K +/- 1 K) was achieved by applying pressure (23 GPa) in a fluorinated Hg-1223 sample near the optimum doping level. Our results show that all our samples are at the optimal doping, and that fluorine incorporation decreases the crystallographic $a$-parameter concomitantly increasing the maximum attainable Tc. This effect reveals that the compression of the $a$ axes is one of the keys that controls the Tc of high temperature superconductors.Comment: 4 pages, 4 figures, submitted to Phys. Rev.