Hole Spin Mixing in InAs Quantum Dot Molecules

Holes confined in single InAs quantum dots have recently emerged as a promising system for the storage or manipulation of quantum information. These holes are often assumed to have only heavy-hole character and further assumed to have no mixing between orthogonal heavy hole spin projections (in the absence of a transverse magnetic field). The same assumption has been applied to InAs quantum dot molecules formed by two stacked InAs quantum dots that are coupled by coherent tunneling of the hole between the two dots. We present experimental evidence of the existence of a hole spin mixing term obtained with magneto-photoluminescence spectroscopy on such InAs quantum dot molecules. We use a Luttinger spinor model to explain the physical origin of this hole spin mixing term: misalignment of the dots along the stacking direction breaks the angular symmetry and allows mixing through the light-hole component of the spinor. We discuss how this novel spin mixing mechanism may offer new spin manipulation opportunities that are unique to holes.Comment: 13 pages, 9 figure

Fast spin rotations by optically controlled geometric phases in a quantum dot

We demonstrate optical control of the geometric phase acquired by one of the spin states of an electron confined in a charge-tunable InAs quantum dot via cyclic 2pi excitations of an optical transition in the dot. In the presence of a constant in-plane magnetic field, these optically induced geometric phases result in the effective rotation of the spin about the magnetic field axis and manifest as phase shifts in the spin quantum beat signal generated by two time-delayed circularly polarized optical pulses. The geometric phases generated in this manner more generally perform the role of a spin phase gate, proving potentially useful for quantum information applications.Comment: 4 pages, 3 figures, resubmitted to Physical Review Letter

Electrically tunable g-factors in quantum dot molecular spin states

We present a magneto-photoluminescence study of individual vertically stacked InAs/GaAs quantum dot pairs separated by thin tunnel barriers. As an applied electric field tunes the relative energies of the two dots, we observe a strong resonant increase or decrease in the g-factors of different spin states that have molecular wavefunctions distributed over both quantum dots. We propose a phenomenological model for the change in g-factor based on resonant changes in the amplitude of the wavefunction in the barrier due to the formation of bonding and antibonding orbitals.Comment: 5 pages, 5 figures, Accepted by Phys. Rev. Lett. New version reflects response to referee comment

Photoluminescence Spectroscopy of the Molecular Biexciton in Vertically Stacked Quantum Dot Pairs

We present photoluminescence studies of the molecular neutral biexciton-exciton spectra of individual vertically stacked InAs/GaAs quantum dot pairs. We tune either the hole or the electron levels of the two dots into tunneling resonances. The spectra are described well within a few-level, few-particle molecular model. Their properties can be modified broadly by an electric field and by structural design, which makes them highly attractive for controlling nonlinear optical properties.Comment: 4 pages, 5 figures, (v2, revision based on reviewers comments, published

All-Optical Ultrafast Control and Read-Out of a Single Negatively Charged Self-Assembled InAs Quantum Dot

We demonstrate the all-optical ultrafast manipulation and read-out of optical transitions in a single negatively charged self-assembled InAs quantum dot, an important step towards ultrafast control of the resident spin. Experiments performed at zero magnetic field show the excitation and decay of the trion (negatively charged exciton) as well as Rabi oscillations between the electron and trion states. Application of a DC magnetic field perpendicular to the growth axis of the dot enables observation of a complex quantum beat structure produced by independent precession of the ground state electron and the excited state heavy hole spins

Spin Fine Structure in Optically Excited Quantum Dot Molecules

The interaction between spins in coupled quantum dots is revealed in distinct fine structure patterns in the measured optical spectra of InAs/GaAs double quantum dot molecules containing zero, one, or two excess holes. The fine structure is explained well in terms of a uniquely molecular interplay of spin exchange interactions, Pauli exclusion and orbital tunneling. This knowledge is critical for converting quantum dot molecule tunneling into a means of optically coupling not just orbitals, but spins.Comment: 10 pages, 7 figures, added material, (published

Stimulated Raman spin coherence and spin-flip induced hole burning in charged GaAs quantum dots

High-resolution spectral hole burning (SHB) in coherent nondegenerate differential transmission spectroscopy discloses spin-trion dynamics in an ensemble of negatively charged quantum dots. In the Voigt geometry, stimulated Raman spin coherence gives rise to Stokes and anti-Stokes sidebands on top of the trion spectral hole. The prominent feature of an extremely narrow spike at zero detuning arises from spin population pulsation dynamics. These SHB features confirm coherent electron spin dynamics in charged dots, and the linewidths reveal spin spectral diffusion processes.Comment: 5 pages, 5 figure