Atomic layer deposition of cobalt phosphide for efficient water splitting

Transition‐metal phosphides (TMP) prepared by atomic layer deposition (ALD) are reported for the first time. Ultrathin Co‐P films were deposited by using PH3 plasma as the phosphorus source and an extra H2 plasma step to remove excess P in the growing films. The optimized ALD process proceeded by self‐limited layer‐by‐layer growth, and the deposited Co‐P films were highly pure and smooth. The Co‐P films deposited via ALD exhibited better electrochemical and photoelectrochemical hydrogen evolution reaction (HER) activities than similar Co‐P films prepared by the traditional post‐phosphorization method. Moreover, the deposition of ultrathin Co‐P films on periodic trenches was demonstrated, which highlights the broad and promising potential application of this ALD process for a conformal coating of TMP films on complex three‐dimensional (3D) architectures

Die Unfallverhütungsvorschriften der gewerblichen Berufsgenossenschaften und andere Bestimmungen für den Arbeiterschutz : Vortrag gehalten in der ständigen Ausstellung für Arbeiterwolhlfahrt /

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Molecular-level insights into aging processes of skin elastin

Skin aging is characterized by different features including wrinkling, atrophy of the dermis and loss of elasticity associated with damage to the extracellular matrix protein elastin. The aim of this study was to investigate the aging process of skin elastin at the molecular level by evaluating the influence of intrinsic (chronological aging) and extrinsic factors (sun exposure) on the morphology and susceptibility of elastin towards enzymatic degradation. Elastin was isolated from biopsies derived from sun-protected or sun-exposed skin of differently aged individuals. The morphology of the elastin fibers was characterized by scanning electron microscopy. Mass spectrometric analysis and label-free quantification allowed identifying differences in the cleavage patterns of the elastin samples after enzymatic digestion

Temperature dependent giant resistance anomaly in LaAlO3/SrTiO3 nanostructures

AbstractThe resistance of the electron gas (2DEG) at the interface between the two band insulators LaAlO3 (LAO) and SrTiO3 (STO) typically drops monotonically with temperature and R/T curves during cooling and warm-up look identical for large area structures. Here we show that if the LAO/STO is laterally restricted by nanopatterning the resistance exhibits a temperature anomaly. Warming up nanostructures from low temperatures leads to one or two pronounced resistance peaks between 50 and 100 K not observed for larger dimensions. During cool-down current filaments emerge at the domain walls that form during a structural phase transition of the STO substrate. During warm-up the reverse phase transition can interrupt filaments before the sheet conductivity which dominates at higher temperature is reestablished. Due to the limited number of filaments in a nanostructure this process can result in a complete loss of conductance. As a consequence of these findings the transport physics extracted from experiments in small and large area LAO/STO structures may need to be reconsidered.</jats:p