2,426 research outputs found
Dependence of Self-Assembled Peptide Hydrogel Network Structure on Local Fibril Nanostructure
Physically cross-linked, fibrillar hydrogel networks are formed by the self-assembly of β-hairpin peptide molecules with varying degrees of strand asymmetry. The peptide registry in the self-assembled state can be used as a design element to generate fibrils with twisting, nontwisting, or laminated morphology. The mass density of the networks varies significantly, and can be directly related to the local fibrillar morphology as evidenced by small angle neutron scattering (SANS) and in situ substantiation using cryogenic transmission electron microscopy (cryo-TEM) under identical concentrations and conditions. Similarly, the density of the network is dependent on changes in the peptide concentration. Bulk rheological properties of the hydrogels can be correlated to the fibrillar nanostructure, with the stiffer, laminated fibrils forming networks with a higher G′ as compared to the flexible, singular fibrillar networks
Materials and Components for Low Temperature Solid Oxide Fuel Cells – an Overview
This article summarizes the recent advancements made in the area of materials and components for low temperature solid oxide fuel cells (LT-SOFCs). LT-SOFC is a new trend in SOFCtechnology since high temperature SOFC puts very high demands on the materials and too expensive to match marketability. The current status of the electrolyte and electrode materials used in SOFCs, their specific features and the need for utilizing them for LT-SOFC are presented precisely in this review article. The section on electrolytes gives an overview of zirconia, lanthanum gallate and ceria based materials. Also, this review article explains the application of different anode, cathode and interconnect materials used for SOFC systems. SOFC can result in better performance with the application of liquid fuels such methanol and ethanol. As a whole, this review article discusses the novel materials suitable for operation of SOFC systems especially for low temperature operation
SI-based unreleased hybrid MEMS-CMOS resonators in 32nm technology
This work presents the first unreleased Silicon resonators fabricated at the transistor level of a standard CMOS process, and realized without any release steps or packaging. These unreleased bulk acoustic resonators are driven capacitively using the thin gate dielectric of the CMOS process, and actively sensed with a Field Effect Transistor (FET) incorporated into the resonant body. FET sensing using the high f[subscript T], high performance transistors in CMOS amplifies the mechanical signal before the presence of parasitics. This enables RF-MEMS resonators at orders of magnitude higher frequencies than possible with passive devices. First generation CMOS-MEMS Si resonators with Acoustic Bragg Reflectors are demonstrated at 11.1 GHz with Q~17 and a total footprint of 5μm × 3μm using IBM's 32nm SOI technology.United States. Defense Advanced Research Projects Agency. Leading Edge Access ProgramUnited States. National Security Agency. Trusted Access Program OfficeInternational Business Machines Corporatio
Resonant Body Transistors in IBM's 32nm SOI CMOS technology
This work presents an unreleased CMOS-integrated MEMS resonators fabricated at the transistor level of IBM's 32SOI technology and realized without the need for any post-processing or packaging. These Resonant Body Transistors (RBTs) are driven capacitively and sensed piezoresistively using an n-channel Field Effect Transistor (nFET). Acoustic Bragg Reflectors (ABRs) are used to localize acoustic vibrations in these resonators completely buried in the CMOS stack and surrounded by low-k dielectric. Experimental results from the first generation hybrid CMOS-MEMS show RBTs operating at 11.1-11.5 GHz with footprints <; 5μm × 3μm. The response of active resonators is shown to contrast with passive resonators showing no discernible peak. Comparative behavior of devices with design variations is used to demonstrate the effect of ABRs on spurious mode suppression. Temperature stability and TCF compensation due to complimentary materials in the CMOS stack are experimentally verified
Resonant body transistors in standard CMOS technology
This work presents Si-based electromechanical resonators fabricated at the transistor level of a standard SOI CMOS technology and realized without the need for any postprocessing or packaging. These so-called Resonant Body Transistors (RBTs) are driven capacitively and sensed by piezoresistively modulating the drain current of a Field Effect Transistor (FET). First generation devices operating at 11.1-11.5 GHz with footprints of 3μm×5μm are demonstrated. These unreleased bulk acoustic resonators are completely buried within the CMOS stack and acoustic energy at resonance is confined using Acoustic Bragg Reflectors (ABRs). The complimentary TCE of Si/SiO[subscript 2] in the resonator and the surrounding ABRs results in a temperature stability TCF of <;3 ppm/K. Comparative behavior of devices is also discussed to analyze the effect of fabrication variations and active sensing.United States. National Security Agency. Trusted Access Program OfficeUnited States. Defense Advanced Research Projects Agency. Leading Edge Access ProgramIBM Researc
Long-Term Bidirectional Neuron Interfaces for Robotic Control, and In Vitro Learning Studies
There are two fundamentally different goals for neural interfacing. On the biology side, to interface living neurons to external electronics allows the observation and manipulation of neural circuits to elucidate their fundamental mechanisms. On the engineering side, neural interfaces in animals, people, or in cell culture have the potential to restore missing functionality, or someday, to enhance existing functionality. At the Laboratory for NeuroEngineering at Georgia Tech, we are developing new technologies to help make both goals attainable. We culture dissociated mammalian neurons on multi-electrode arrays, and use them as the brain of a 'Hybrot', or hybrid neural-robotic system. Distributed neural activity patterns are used to control mobile robots. We have created the hardware and software necessary to feed the robots' sensory inputs back to the cultures in real time, as electrical stimuli. By embodying cultured networks, we study learning and memory at the cellular and network level, using 2-photon laser-scanning microscopy to image plasticity while it happens. We have observed a very rich dynamical landscape of activity patterns in networks of only a few thousand cells. We can alter this landscape via electrical stimuli, and use the hybrot system to study the emergent properties of networks in vitro
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