On the Evolution, Numbers, and Characteristics of Close-Binary Supersoft Sources

The ability to perform detailed evolutionary calculations is essential to the development of a well-defined and testable binary model. Unfortunately, traditional evolutionary calculations cannot be used to follow a significant fraction of possible close-binary supersoft sources (CBSSs). It is therefore important to examine the input physics carefully, to be sure that all relevant and potentially important physical processes are included. In this paper we continue a line of research begun last year, and explore the role that winds are expected to play in the evolution of CBSSs. We find that at least a subset of the systems that seemed to be candidates for common envelope evolution may survive, if radiation emitted by white dwarf drives winds from the system. We study the effects of winds on the binary evolution of CBSSs, and compute the number and characteristics of CBSSs expected to be presently active in galaxies such as our own or M31.Comment: 13 pages; figures included in 0.33 M postscript file; in Supersoft X-ray Sources, ed. J. Greiner (Springer-Verlag: Berlin) (1996

Photoemission Spectra from Reduced Density Matrices: the Band Gap in Strongly Correlated Systems

We present a method for the calculation of photoemission spectra in terms of reduced density matrices. We start from the spectral representation of the one-body Green's function G, whose imaginary part is related to photoemission spectra, and we introduce a frequency-dependent effective energy that accounts for all the poles of G. Simple approximations to this effective energy give accurate spectra in model systems in the weak as well as strong correlation regime. In real systems reduced density matrices can be obtained from reduced density-matrix functional theory. Here we use this approach to calculate the photoemission spectrum of bulk NiO: our method yields a qualitatively correct picture both in the antiferromagnetic and paramagnetic phases, contrary to mean-field methods, in which the paramagnet is a metal

Influence of parasitic capacitance variations on 65 nm and 32 nm predictive technology model SRAM core-cells

The continuous improving of CMOS technology allows the realization of digital circuits and in particular static random access memories that, compared with previous technologies, contain an impressive number of transistors. The use of new production processes introduces a set of parasitic effects that gain more and more importance with the scaling down of the technology. In particular, even small variations of parasitic capacitances in CMOS devices are expected to become an additional source of faulty behaviors in future technologies. This paper analyzes and compares the effect of parasitic capacitance variations in a SRAM memory circuit realized with 65 nm and 32 nm predictive technology model