Matter-positronium interaction: An exact diagonalization study of the He atom - positronium system

The many-body system comprising a He nucleus, three electrons, and a positron has been studied using the exact diagonalization technique. The purpose has been to clarify to which extent the system can be considered as a distinguishable positronium (Ps) atom interacting with a He atom and, thereby, to pave the way to a practical atomistic modeling of Ps states and annihilation in matter. The maximum value of the distance between the positron and the nucleus is constrained and the Ps atom at different distances from the nucleus is identified from the electron and positron densities, as well as from the electron-positron distance and center-of-mass distributions. The polarization of the Ps atom increases as its distance from the nucleus decreases. A depletion of the He electron density, particularly large at low density values, has been observed. The ortho-Ps pick-off annihilation rate calculated as the overlap of the positron and the free He electron densities has to be corrected for the observed depletion, specially at large pores/voids.Comment: 18 pages, 8 figure

Towards Detecting Rumours in Social Media

The spread of false rumours during emergencies can jeopardise the well-being of citizens as they are monitoring the stream of news from social media to stay abreast of the latest updates. In this paper, we describe the methodology we have developed within the PHEME project for the collection and sampling of conversational threads, as well as the tool we have developed to facilitate the annotation of these threads so as to identify rumourous ones. We describe the annotation task conducted on threads collected during the 2014 Ferguson unrest and we present and analyse our findings. Our results show that we can collect effectively social media rumours and identify multiple rumours associated with a range of stories that would have been hard to identify by relying on existing techniques that need manual input of rumour-specific keywords

Positron annihilation spectroscopy for the determination of thickness and defect profile in thin semiconductor layers

We present a method, based on positron annihilation spectroscopy, to obtain information on the defect depth profile of layers grown over high-quality substrates. We have applied the method to the case of ZnO layers grown on sapphire, but the method can be very easily generalized to other heterostructures (homostructures) where the positron mean diffusion length is small enough. Applying the method to the ratio of W and S parameters obtained from Doppler broadening measurements, W∕S plots, it is possible to determine the thickness of the layer and the defect profile in the layer, when mainly one defect trapping positron is contributing to positron trapping at the measurement temperature. Indeed, the quality of such characterization is very important for potential technological applications of the layer.Peer reviewe

Recombination processes in unintentionally doped GaTe single crystals

Emission spectra of GaTe single crystals in the range of 1.90–1.38 eV have been analyzed at different temperatures and excitation intensities by photoluminescence, photoluminescence excitation, and selective photoluminescence. A decrease in band gap energy with an increase in temperature was obtained from the redshift of the free exciton recombination peak. The energy of longitudinal optical phonons was found to be 14±1 meV. A value of 1.796±0.001 eV for the band gap at 10 K was determined, and the bound exciton energy was found to be 18±0.3 meV. The activation energy of the thermal quenching of the main recombination peaks and of the ones relating to the ionization energy of impurities and defects was analyzed. The results obtained show the existence of two acceptor levels with ionization energies of 110±5 and 150±5 meV, respectively, and one donor level with an ionization energy of 75±5 meV. The study of chemical composition by inductively coupled plasma-optical emission spectroscopy and x-ray energy dispersion spectroscopy shows the existence of Na, Li, and Si. Sodium and lithium impurities could be associated with acceptor levels at gallium substitutional sites, and silicon ones with a donor level at Ga sites, whose vacancies can also be involved in these electronic [email protected] ; [email protected]

Positron annihilation lifetime spectroscopy of ZnO bulk samples

In order to gain a further insight into the knowledge of point defects of ZnO, positron annihilation lifetime spectroscopy was performed on bulk samples annealed under different atmospheres. The samples were characterized at temperatures ranging from 10 to 500 K. Due to difficulties in the conventional fitting of the lifetime spectra caused by the low intensity of the defect signals, we have used an alternative method as a solution to overcome these difficulties and resolve all the lifetime components present in the spectra. Two different vacancy-type defects are identified in the samples: Zn vacancy complexes (VZn−X) and vacancy clusters consisting of up to five missing Zn-O pairs. In addition to the vacancies, we observe negative-ion-type defects, which are tentatively attributed to intrinsic defects in the Zn sublattice. The effect of the annealing on the observed defects is discussed. The concentrations of the VZn−X complexes and negative-ion-type defects are in the 0.2–2 ppm range, while the cluster concentrations are 1–2 orders of magnitude lower.Peer reviewe

Zinc vacancy and oxygen interstitial in ZnO revealed by sequential annealing and electron irradiation

By combining results from positron annihilation and photoluminescence spectroscopy with data from Hall effect measurements, the characteristic deep level emission centered at ∼1.75 eV and exhibiting an activation energy of thermal quenching of 11.5 meV is associated with the zinc vacancy. Further, a strong indication that oxygen interstitials act as a dominating acceptor is derived from the analysis of charge carrier losses induced by electron irradiation with variable energy below and above the threshold for Zn-atom displacement. We also demonstrate that the commonly observed green emission is related to an extrinsic acceptorlike impurity, which may be readily passivated by oxygen vacancies.Peer reviewe

Using Gaussian Processes for Rumour Stance Classification in Social Media

Social media tend to be rife with rumours while new reports are released piecemeal during breaking news. Interestingly, one can mine multiple reactions expressed by social media users in those situations, exploring their stance towards rumours, ultimately enabling the flagging of highly disputed rumours as being potentially false. In this work, we set out to develop an automated, supervised classifier that uses multi-task learning to classify the stance expressed in each individual tweet in a rumourous conversation as either supporting, denying or questioning the rumour. Using a classifier based on Gaussian Processes, and exploring its effectiveness on two datasets with very different characteristics and varying distributions of stances, we show that our approach consistently outperforms competitive baseline classifiers. Our classifier is especially effective in estimating the distribution of different types of stance associated with a given rumour, which we set forth as a desired characteristic for a rumour-tracking system that will warn both ordinary users of Twitter and professional news practitioners when a rumour is being rebutted

Correlation between Zn vacancies and photoluminescence emission in ZnO films.

Photoluminescence and positron annihilation spectroscopy have been used to characterize and identify vacancy-type defects produced in ZnO films grown on sapphire by metal-organic chemical-vapor deposition. The photoluminescence of the samples in the near band edge region has been studied, paying particular attention to the emission at 370.5 nm (3.346 eV). This emission has been correlated to the concentration of Zn vacancies in the films, which has been determined by positron annihilation [email protected] [email protected]