Statistical variability and reliability in nanoscale FinFETs

A comprehensive full-scale 3D simulation study of statistical variability and reliability in emerging, scaled FinFETs on SOI substrate with gate-lengths of 20nm, 14nm and 10nm and low channel doping is presented. Excellent electrostatic integrity and resulting tolerance to low channel doping are perceived as the main FinFET advantages, resulting in a dramatic reduction of statistical variability due to random discrete dopants (RDD). It is found that line edge roughness (LER), metal gate granularity (MGG) and interface trapped charges (ITC) dominate the parameter fluctuations with different distribution features, while RDD may result in relatively rare but significant changes in the device characteristics

Effect of cylindrical geometry on the wet thermal oxidation of AlAs

We have investigated the wet thermal oxidation of AlAs in cylindrical geometry, a typical configuration for vertical-cavity surface-emitting lasers. Through both experiment and theoretical calculations, we demonstrate a significantly different time dependence for circular mesas from what has been reported in the literature both in studies of stripes and in a study of circular mesas. We attribute this different time dependence to the effect of geometry on the oxidation

Critical couplings and string tensions via lattice matching of RG decimations

We calculate critical couplings and string tensions in SU(2) and SU(3) pure lattice gauge theory by a simple and inexpensive technique of two-lattice matching of RG block transformations. The transformations are potential moving decimations generating plaquette actions with large number of group characters and exhibit rapid approach to a unique renormalized trajectory. Fixing the critical coupling $\beta_c(N_\tau)$ at one value of temporal lattice length $N_\tau$ by MC simulation, the critical couplings for any other value of $N_\tau$ are then obtained by lattice matching of the block decimations. We obtain $\beta_c(N_\tau)$ values over the range $N_\tau = 3 - 32$ and find agreement with MC simulation results to within a few percent in all cases. A similar procedure allows the calculation of string tensions with similarly good agreement with MC data.Comment: 12 pages, Latex, 1 figur

Strain in wet thermally oxidized square and circular mesas

In this paper, we report the observation, through optical microscopy, of drumhead-like patterns in square and circular mesas which have been wet thermally oxidized to completion. Micro-Raman spectroscopy measurements are used to show that these patterns roughly correspond to variations in strain induced in surrounding semiconductor layers by the oxidation process. In addition, the patterns have a specific orientation with respect to the crystallographic axes of the semiconductor. A crystallographic dependence of the oxidation process itself is demonstrated and used to explain the orientation of the drumhead patterns

Accurate simulations of the interplay between process and statistical variability for nanoscale FinFET-based SRAM cell stability

In this paper we illustrate how by using advanced atomistic TCAD tools the interplay between long-range process variation and short-range statistical variability in FinFETs can be accurately modelled and simulated for the purposes of Design-Technology Co-Optimization (DTCO). The proposed statistical simulation and compact modelling methodology is demonstrated via a comprehensive evaluation of the impact of FinFET variability on SRAM cell stability

Bridgeness: A Local Index on Edge Significance in Maintaining Global Connectivity

Edges in a network can be divided into two kinds according to their different roles: some enhance the locality like the ones inside a cluster while others contribute to the global connectivity like the ones connecting two clusters. A recent study by Onnela et al uncovered the weak ties effects in mobile communication. In this article, we provide complementary results on document networks, that is, the edges connecting less similar nodes in content are more significant in maintaining the global connectivity. We propose an index named bridgeness to quantify the edge significance in maintaining connectivity, which only depends on local information of network topology. We compare the bridgeness with content similarity and some other structural indices according to an edge percolation process. Experimental results on document networks show that the bridgeness outperforms content similarity in characterizing the edge significance. Furthermore, extensive numerical results on disparate networks indicate that the bridgeness is also better than some well-known indices on edge significance, including the Jaccard coefficient, degree product and betweenness centrality.Comment: 10 pages, 4 figures, 1 tabl

Mapping of AlxGa1–xAs band edges by ballistic electron emission spectroscopy

We have employed ballistic electron emission microscopy (BEEM) to study the energy positions in the conduction band of AlxGa1 – xAs. Epilayers of undoped AlxGa1 – xAs were grown by molecular beam epitaxy on conductive GaAs substrates. The Al composition x took on values of 0, 0.11, 0.19, 0.25, 0.50, 0.80 and 1 so that the material was examined in both the direct and indirect band gap regime. The AlxGa1 – xAs layer thickness was varied from 100 to 500 Å to ensure probing of bulk energy levels. Different capping layers and surface treatments were explored to prevent surface oxidation and examine Fermi level pinning at the cap layer/AlxGa1 – xAs interface. All samples were metallized ex situ with a 100 Å Au layer so that the final BEEM structure is of the form Au/capping layer/AlxGa1 – xAs/bulk GaAs. Notably we have measured the Schottky barrier height for Au on AlxGa1 – xAs. We have also probed the higher lying band edges such as the X point at low Al concentrations and the L point at high Al concentrations. Variations of these critical energy positions with Al composition x were mapped out in detail and compared with findings from other studies. Local variations of these energy positions were also examined and found to be on the order of 30–50 meV. The results of this study suggest that BEEM can provide accurate positions for multiple energy levels in a single semiconductor structure

Tunnel switch diode based on AlSb/GaSb heterojunctions

We report on tunnel switch diodes based on AlSb barriers and GaSb p–n junctions grown by molecular beam epitaxy. These were the devices with thyristor like switching in the GaSb/AlSb system. The characteristic "S" shaped current–voltage curve was found to occur for structures with AlSb barriers less than 300 Å thick. The switching voltage and current density exhibited less sensitivity to barrier and epilayer thickness than was predicted by the punch-through model. The results were correlated with drift diffusion simulations which have been modified to account for the presence of a tunneling contact

Analytical Solution to Transport in Brownian Ratchets via Gambler's Ruin Model

We present an analogy between the classic Gambler's Ruin problem and the thermally-activated dynamics in periodic Brownian ratchets. By considering each periodic unit of the ratchet as a site chain, we calculated the transition probabilities and mean first passage time for transitions between energy minima of adjacent units. We consider the specific case of Brownian ratchets driven by Markov dichotomous noise. The explicit solution for the current is derived for any arbitrary temperature, and is verified numerically by Langevin simulations. The conditions for vanishing current and current reversal in the ratchet are obtained and discussed.Comment: 4 pages, 3 figure

Modelling the multi-wavelength emissions from PSR B1259-63/LS 2883: the effects of the stellar disc on shock radiations

PSR B1259-63/LS 2883 is an elliptical pulsar/Be star binary and emits broadband emissions from radio to TeV $\gamma$-rays. The massive star possesses an equatorial disc, which is inclined with the orbital plane of the pulsar. The non-thermal emission from the system is believed to be produced by the pulsar wind shock and the double-peak profiles in the X-ray and TeV $\gamma$-ray light curves are related to the phases of the pulsar passing through the disc region of the star. In this paper, we investigate the interactions between the pulsar wind and stellar outflows, especially with the presence of the disc, and present a multi-wavelength modelling of the emission from this system. We show that the double-peak profiles of X-ray and TeV $\gamma$-ray light curves are caused by the enhancements of the magnetic field and the soft photons at the shock during the disc passages. As the pulsar is passing through the equatorial disc, the additional pressure of the disc pushes the shock surface closer to the pulsar, which causes the enhancement of magnetic field in the shock, and thus increases the synchrotron luminosity. The TeV $\gamma$-rays due to the inverse-Compton (IC) scattering of shocked electrons with seed photons from the star is expected to peak around periastron which is inconsistent with observations. However, the shock heating of the stellar disc could provide additional seed photons for IC scattering during the disc passages, and thus produces the double-peak profiles as observed in the TeV $\gamma$-ray light curve. Our model can possibly be examined and applied to other similar gamma-ray binaries, such as PSR J2032+4127/MT91 213, HESS J0632+057, and LS I+61$^{\circ}$303.Comment: 14 pages, 6 figure