Feasibility of solar power for Mars

NASA, through Project Pathfinder, has put in place an advanced technology program to address future needs of manned space exploration. Included in the missions under study is the establishment of outposts on the surface of Mars. The Surface Power program in Pathfinder is aimed at providing photovoltaic array technology for such an application (as well as for the lunar surface). Another important application is for unmanned precursor missions, such as the photovoltaic-power aircraft, which will scout landing sites and investigate Mars geology for a 1 to 2 year mission without landing on the surface. Effective design and utilization of solar energy depend to a large extent on adequate knowledge of solar radiation characteristics in the region of solar energy system operation. The two major climatic components needed for photovoltaic system designs are the distributions of solar insolation and ambient temperature. These distributions for the Martian climate are given at the two Viking lander locations but can also be used, to the first approximation, for other latitudes. One of the most important results is that there is a large diffuse component of the insolation, even at high optical depth, so that solar energy system operation is still possible. If the power system is to continue to generate power even on high optical opacity days, it is thus important that the photovoltaic system be designed to collect diffuse irradiance as well as direct. In absence of long term insolation and temperature data for Mars, the data presented can be used until updated data are available. The ambient temperature data are given as measured directly by the temperature sensor; the insolation data are calculated from optical depth measurements of the atmosphere

Photovoltaic array for Martian surface power

Missions to Mars will require electric power. A leading candidate for providing power is solar power produced by photovoltaic arrays. To design such a power system, detailed information on solar-radiation availability on the Martian surface is necessary. The variation of the solar radiation on the Martian surface is governed by three factors: (1) variation in Mars-Sun distance; (2) variation in solar zenith angle due to Martian season and time of day; and (3) dust in the Martian atmosphere. A major concern is the dust storms, which occur on both local and global scales. However, there is still appreciable diffuse sunlight available even at high opacity, so that solar array operation is still possible. Typical results for tracking solar collectors are also shown and compared to the fixed collectors. During the Northern Hemisphere spring and summer the isolation is relatively high, 2-5 kW-hr/sq m-day, due to the low optical depth of the Martian atmosphere. These seasons, totalling a full terrestrial year, are the likely ones during which manned mission will be carried out

Parameterization of solar cells

The aggregation (sorting) of the individual solar cells into an array is commonly based on a single operating point on the current-voltage (I-V) characteristic curve. An alternative approach for cell performance prediction and cell screening is provided by modeling the cell using an equivalent electrical circuit, in which the parameters involved are related to the physical phenomena in the device. These analytical models may be represented by a double exponential I-V characteristic with seven parameters, by a double exponential model with five parameters, or by a single exponential equation with four or five parameters. In this article we address issues concerning methodologies for the determination of solar cell parameters based on measured data points of the I-V characteristic, and introduce a procedure for screening of solar cells for arrays. We show that common curve fitting techniques, e.g., least squares, may produce many combinations of parameter values while maintaining a good fit between the fitted and measured I-V characteristics of the cell. Therefore, techniques relying on curve fitting criteria alone cannot be directly used for cell parameterization. We propose a consistent procedure which takes into account the entire set of parameter values for a batch of cells. This procedure is based on a definition of a mean cell representing the batch, and takes into account the relative contribution of each parameter to the overall goodness of fit. The procedure is demonstrated on a batch of 50 silicon cells for Space Station Freedom

The Larmor clock and anomalous spin dephasing in silicon

Drift-diffusion theory - which fully describes charge transport in semiconductors - is also universally used to model transport of spin-polarized electrons in the presence of longitudinal electric fields. By transforming spin transit time into spin orientation with precession (a technique called the "Larmor clock") in current-sensing vertical-transport intrinsic Si devices, we show that spin diffusion (and concomitant spin dephasing) can be greatly enhanced with respect to charge diffusion, in direct contrast to predictions of spin Coulomb-drag diffusion suppression.Comment: minor edits and updated ref

Nonequilibrium Transport through a Kondo Dot in a Magnetic Field: Perturbation Theory

Using nonequilibrium perturbation theory, we investigate the nonlinear transport through a quantum dot in the Kondo regime in the presence of a magnetic field. We calculate the leading logarithmic corrections to the local magnetization and the differential conductance, which are characteristic of the Kondo effect out of equilibrium. By solving a quantum Boltzmann equation, we determine the nonequilibrium magnetization on the dot and show that the application of both a finite bias voltage and a magnetic field induces a novel structure of logarithmic corrections not present in equilibrium. These corrections lead to more pronounced features in the conductance, and their form calls for a modification of the perturbative renormalization group.Comment: 16 pages, 7 figure

Towards spin injection from silicon into topological insulators: Schottky barrier between Si and Bi2Se3

A scheme is proposed to electrically measure the spin-momentum coupling in the topological insulator surface state by injection of spin polarized electrons from silicon. As a first approach, devices were fabricated consisting of thin (<100nm) exfoliated crystals of Bi2Se3 on n-type silicon with independent electrical contacts to silicon and Bi2Se3. Analysis of the temperature dependence of thermionic emission in reverse bias indicates a barrier height of 0.34 eV at the Si-Bi2Se3 interface. This robust Schottky barrier opens the possibility of novel device designs based on sub-band gap internal photoemission from Bi2Se3 into Si

Coherent spin transport through a 350-micron-thick Silicon wafer

We use all-electrical methods to inject, transport, and detect spin-polarized electrons vertically through a 350-micron-thick undoped single-crystal silicon wafer. Spin precession measurements in a perpendicular magnetic field at different accelerating electric fields reveal high spin coherence with at least 13pi precession angles. The magnetic-field spacing of precession extrema are used to determine the injector-to-detector electron transit time. These transit time values are associated with output magnetocurrent changes (from in-plane spin-valve measurements), which are proportional to final spin polarization. Fitting the results to a simple exponential spin-decay model yields a conduction electron spin lifetime (T1) lower bound in silicon of over 500ns at 60K.Comment: Accepted in PR