Influence of different V-grooved GaAs substrates on the geometrical shape of InGaAs/GaAs quantum wires

The structure of InGaAs/GaAs quantum wires (QWRs) grown on V-grooved GaAs substrates by low pressure metalorganic vapor phase epitaxy was studied by conventional and high resolution transmission electron microscopy. We show that, by growing the structure on grooves with (3 1 1)A-like and (1 1 1)A-like oriented facets, the quantum wire profile can be changed from a constant thickness bent layer to a strongly tapered quantum wire of crescent shape. Highly uniform arrays of vertically stacked wires with a narrow size distribution along the growth direction have been obtained for both structures

Comparison of radiative and structural properties of 1.3 mu m In/sub x/Ga/sub (1-x)/As quantum-dot laser structures grown by metalorganic chemical vapor deposition and molecular-beam epitaxy: effect on the lasing properties

Comparison of radiative and structural properties of 1.3 μm InxGa(1-x)As quantum dot laser structure was discussed. There structures are grown by metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). Results showed that ground state is present only in MBE samples

Wavelength control from 1.25 to 1.4 um in InxGa1-xAs quantum dot structures grown by metal organic chemical vapor deposition.

Times cited: 47 2005 Journal Impact Factor: 4.12

Nano-island fabrication by electron beam lithography and selective oxidation ofAl-rich AlGaAs layers for single electron device application

A nanometer-scale island embedded between two tunnel junctions constitutes the elementary cell of single electron devices (SED), such as single electron transistors (SET) and memories. In this work we report on a new method for the fabrication of a nanometer-scale semiconductor island through AlGaAs/GaAs epitaxial growth, electron beam lithography and selective oxidation of Al-rich AlGaAs layers. We have used a combination of high-resolution electron beam lithography and selective oxidation of Al-rich AlGaAs layers in order to fabricate a non-oxidized semiconductor island smaller than the electron beam lithography (EBL) defined size. The pattern was transferred down to the bottom AlAs layer and a selective oxidation of the Al-rich layers was performed in water vapor at a temperature of 300 °C, which led to the formation of the aluminum oxide. The higher oxidation rate of the AlAs compared to the Al0.8Ga0.2As layer, together with the strain accumulation in the Al0.8Ga0.2As, caused the formation of nanoscale semiconductor islands embedded in an aluminum oxide shell. After the oxidation and cleavage of the sample, selective wet etching has been performed in order to evidence the unoxidized region through an SEM inspection

Dependence of the emission wavelength on the internal electric field in quantum dot laser structures grown by metal-organic chemical-vapor deposition.

Times cited: 17 2005 Journal Impact Factor: 4.12