Sharp Bounds on the Entropy of the Poisson Law and Related Quantities

One of the difficulties in calculating the capacity of certain Poisson channels is that H(lambda), the entropy of the Poisson distribution with mean lambda, is not available in a simple form. In this work we derive upper and lower bounds for H(lambda) that are asymptotically tight and easy to compute. The derivation of such bounds involves only simple probabilistic and analytic tools. This complements the asymptotic expansions of Knessl (1998), Jacquet and Szpankowski (1999), and Flajolet (1999). The same method yields tight bounds on the relative entropy D(n, p) between a binomial and a Poisson, thus refining the work of Harremoes and Ruzankin (2004). Bounds on the entropy of the binomial also follow easily.Comment: To appear, IEEE Trans. Inform. Theor

Rad-Hard, Miniaturized, Scalable, High-Voltage Switching Module for Power Applications Rad-Hard, Miniaturized

A paper discusses the successful development of a miniaturized radiation hardened high-voltage switching module operating at 2.5 kV suitable for space application. The high-voltage architecture was designed, fabricated, and tested using a commercial process that uses a unique combination of 0.25 micrometer CMOS (complementary metal oxide semiconductor) transistors and high-voltage lateral DMOS (diffusion metal oxide semiconductor) device with high breakdown voltage (greater than 650 V). The high-voltage requirements are achieved by stacking a number of DMOS devices within one module, while two modules can be placed in series to achieve higher voltages. Besides the high-voltage requirements, a second generation prototype is currently being developed to provide improved switching capabilities (rise time and fall time for full range of target voltages and currents), the ability to scale the output voltage to a desired value with good accuracy (few percent) up to 10 kV, to cover a wide range of high-voltage applications. In addition, to ensure miniaturization, long life, and high reliability, the assemblies will require intensive high-voltage electrostatic modeling (optimized E-field distribution throughout the module) to complete the proposed packaging approach and test the applicability of using advanced materials in a space-like environment (temperature and pressure) to help prevent potential arcing and corona due to high field regions. Finally, a single-event effect evaluation would have to be performed and single-event mitigation methods implemented at the design and system level or developed to ensure complete radiation hardness of the module

Ensayos de dinteles de fábrica de ladrillo atirantada sobre los nuevos Apoyos Pi, distanciados 6m entre sí

Comunicación presentada en las II Jornadas de Investigación en Construcción: "60 años de Informes de la Construcción", celebradas los pasados 22, 23 y 24 de mayo de 2008 en el Instituto "Eduardo Torroja" de Ciencias de la Construcción (IETCC-CSIC) de Madrid.Comparando la Arquitectura de Ladrillos del s.XIX con el empleo del ladrillo en la Arquitectura del s.XX, se puede observar que abunda mayor patología en las fábricas de ladrillo cara vista recientes que en las más antiguas. El primer paso para prevenir la abundante fisuración de la albañilería apreciada en España a finales del siglo pasado, se dio en 1992, con la realización del "Manual Murfor: La fábrica armada", estableciéndose en él los criterios posteriormente contemplados en el "Eurocódigo 6: Estructuras de Fábrica", de recomendar armar con el 0,03% de la sección del muro, y a distancias verticales no mayores de 600mm. Las primeras aplicaciones arquitectónicas de la fábrica armada en España, fueron realizadas por este Arquitecto en sus obras de la Plaza de la Remonta y de El Espinillo, divulgándose por su potencial arquitectónico, tanto en Europa como en América.En este artículo se retoman las posibilidades del incremento de prestaciones de la fábrica armada Murfor con "arcos atirantados ciegos de gran luz", establecidas por primera vez en el Manual español, lo que permite salvar 6m de luz con solamente 2 armaduras Murfor de 5mm de diámetro en la parte inferior de los dinteles.Los autores agradecen la inestimable colaboración de los Institutos de Investigación IBAC de Aachen (Alemania) y el I.E. Torroja de Madrid (España), por haber hecho posible esta interesante colaboración investigadora europea de valor internacional.Peer reviewe

Lifshitz transition and van Hove singularity in a Topological Dirac Semimetal

A topological Dirac semimetal is a novel state of quantum matter which has recently attracted much attention as an apparent 3D version of graphene. In this paper, we report critically important results on the electronic structure of the 3D Dirac semimetal Na3Bi at a surface that reveals its nontrivial groundstate. Our studies, for the first time, reveal that the two 3D Dirac cones go through a topological change in the constant energy contour as a function of the binding energy, featuring a Lifshitz point, which is missing in a strict 3D analog of graphene (in other words Na3Bi is not a true 3D analog of graphene). Our results identify the first example of a band saddle point singularity in 3D Dirac materials. This is in contrast to its 2D analogs such as graphene and the helical Dirac surface states of a topological insulator. The observation of multiple Dirac nodes in Na3Bi connecting via a Lifshitz point along its crystalline rotational axis away from the Kramers point serves as a decisive signature for the symmetry-protected nature of the Dirac semimetal's topological groundstate.Comment: 5 pages, 4 Figures, Related papers on topological Fermi arcs and Weyl Semimetals (WSMs) are at http://physics.princeton.edu/zahidhasangroup/index.htm

Vibrotactile pedals : provision of haptic feedback to support economical driving

The use of haptic feedback is currently an underused modality in the driving environment, especially with respect to vehicle manufacturers. This exploratory study evaluates the effects of a vibrotactile (or haptic) accelerator pedal on car driving performance and perceived workload using a driving simulator. A stimulus was triggered when the driver exceeded a 50% throttle threshold, past which is deemed excessive for economical driving. Results showed significant decreases in mean acceleration values, and maximum and excess throttle use when the haptic pedal was active as compared to a baseline condition. As well as the positive changes to driver behaviour, subjective workload decreased when driving with the haptic pedal as compared to when drivers were simply asked to drive economically. The literature suggests that the haptic processing channel offers a largely untapped resource in the driving environment, and could provide information without overloading the other attentional resource pools used in driving

Feature extraction based on bio-inspired model for robust emotion recognition

Emotional state identification is an important issue to achieve more natural speech interactive systems. Ideally, these systems should also be able to work in real environments in which generally exist some kind of noise. Several bio-inspired representations have been applied to artificial systems for speech processing under noise conditions. In this work, an auditory signal representation is used to obtain a novel bio-inspired set of features for emotional speech signals. These characteristics, together with other spectral and prosodic features, are used for emotion recognition under noise conditions. Neural models were trained as classifiers and results were compared to the well-known mel-frequency cepstral coefficients. Results show that using the proposed representations, it is possible to significantly improve the robustness of an emotion recognition system. The results were also validated in a speaker independent scheme and with two emotional speech corpora.Fil: Albornoz, Enrique Marcelo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Investigación en Señales, Sistemas e Inteligencia Computacional. Universidad Nacional del Litoral. Facultad de Ingeniería y Ciencias Hídricas. Instituto de Investigación en Señales, Sistemas e Inteligencia Computacional; ArgentinaFil: Milone, Diego Humberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Investigación en Señales, Sistemas e Inteligencia Computacional. Universidad Nacional del Litoral. Facultad de Ingeniería y Ciencias Hídricas. Instituto de Investigación en Señales, Sistemas e Inteligencia Computacional; ArgentinaFil: Rufiner, Hugo Leonardo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Investigación en Señales, Sistemas e Inteligencia Computacional. Universidad Nacional del Litoral. Facultad de Ingeniería y Ciencias Hídricas. Instituto de Investigación en Señales, Sistemas e Inteligencia Computacional; Argentin

MnAs dots grown on GaN(0001)-(1x1) surface

MnAs has been grown by means of MBE on the GaN(0001)-(1x1) surface. Two options of initiating the crystal growth were applied: (a) a regular MBE procedure (manganese and arsenic were delivered simultaneously) and (b) subsequent deposition of manganese and arsenic layers. It was shown that spontaneous formation of MnAs dots with the surface density of 1$\cdot 10^{11}$ cm$^{-2}$ and $2.5\cdot 10^{11}$ cm$^{-2}$, respectively (as observed by AFM), occurred for the layer thickness higher than 5 ML. Electronic structure of the MnAs/GaN systems was studied by resonant photoemission spectroscopy. That led to determination of the Mn 3d - related contribution to the total density of states (DOS) distribution of MnAs. It has been proven that the electronic structures of the MnAs dots grown by the two procedures differ markedly. One corresponds to metallic, ferromagnetic NiAs-type MnAs, the other is similar to that reported for half-metallic zinc-blende MnAs. Both system behave superparamagnetically (as revealed by magnetization measurements), but with both the blocking temperatures and the intra-dot Curie temperatures substantially different. The intra-dot Curie temperature is about 260 K for the former system while markedly higher than room temperature for the latter one. Relations between growth process, electronic structure and other properties of the studied systems are discussed. Possible mechanisms of half-metallic MnAs formation on GaN are considered.Comment: 20+ pages, 8 figure