Trapped electron coupled to superconducting devices

We propose to couple a trapped single electron to superconducting structures located at a variable distance from the electron. The electron is captured in a cryogenic Penning trap using electric fields and a static magnetic field in the Tesla range. Measurements on the electron will allow investigating the properties of the superconductor such as vortex structure, damping and decoherence. We propose to couple a superconducting microwave resonator to the electron in order to realize a circuit QED-like experiment, as well as to couple superconducting Josephson junctions or superconducting quantum interferometers (SQUIDs) to the electron. The electron may also be coupled to a vortex which is situated in a double well potential, realized by nearby pinning centers in the superconductor, acting as a quantum mechanical two level system that can be controlled by a transport current tilting the double well potential. When the vortex is trapped in the interferometer arms of a SQUID, this would allow its detection both by the SQUID and by the electron.Comment: 13 pages, 5 figure

The 1.6-Kv AlGaN/GaN HFETs

The breakdown voltages in unpassivated nonfield-plated AlGan/GaN HFETs on sapphire substrates were studied. These studies reveal that the breakdown is limited by the surface flashover rather than by the AlGan/GaN channel. after elimination of the surface flashover in air, the breakdown voltage scaled linearly with the gate-drain spacing reaching 1.6 kV at 20 mu m. The corresponding static ON-resistance was as low as 3.4 m Omega(.)cm(2). This translates to a power device figure-of-merit V-BR(2)/R-ON = 7.5 x 10(8) V-2 . n(-1) cm(-2), which, to date, is among the best reported values for an AlGan/GaN HFET

III-Nitride Transistors with Capacitively Coupled Contacts

AlGaN∕GaNheterostructure field-effect transistor design using capacitively coupled contacts (C3HFET) is presented. Insulated-gate [C3 metal-oxide-semiconductor HFET(C3MOSHFET)] has also been realized. The capacitively coupled source, gate, and drain of C3 device do not require annealedOhmic contacts and can be fabricated using gate alignment-free technology. For typical AlGaN∕GaNheterostructures, the equivalent contact resistance of C3 transistors is below 0.6Ωmm. In rf-control applications, the C3HFET and especially the C3MOSHFET have much higher operating rf powers as compared to HFETs.C3 design is instrumental for studying the two-dimensional electron gas transport in other wide band gap heterostructures such as AlN∕GaN, diamond, etc., where Ohmic contact fabrication is difficult

Digital Oxide Deposition of SiO\u3csub\u3e2\u3c/sub\u3e Layers for III-Nitride Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors

We present a digital-oxide-deposition (DOD) technique to deposit high quality SiO2dielectric layers by plasma-enhanced chemical vapor deposition using alternate pulses of silicon and oxygen precursors. The DOD procedure allows for a precise thickness control and results in extremely smooth insulating SiO2 layers. An insulating gate AlGaN∕GaNheterostructurefield-effect transistor(HFET) with 8nm thick DOD SiO2dielectric layer had a threshold voltage of −6V (only 1V higher than that of regular HFET), very low threshold voltage dispersion, and output continuous wave rf power of 15W∕mm at 55V drain bias

Silicon Dioxide-Encapsulated High-Voltage AlGaN/GaN HFETs for Power-Switching Applications

In this letter, new approach in achieving high breakdown voltages in AlGan/GaN heterostructure field-effect transistors (HFETs) by suppressing surface flashover using solid encapsulation material is presented. Surface flashover in III-Nitride-based HFETs limits the operating voltages at levels well below breakdown voltages of GaN. This premature gate-drain breakdown can be suppressed by immersing devices in high-dielectric-strength liquids (e.g., Fluorinert); however, such a technique is not practical. In this letter, AlGan/GaN HFETs encapsulated with PECVD-deposited SiO2 films demonstrated breakdown voltage of 900 V, very similar to that of devices immersed in Fluorinert liquid. Simultaneously, low dynamic ON-resistance of 2.43 m Omega. cm(2) has been achieved, making the developed AlGan/GaN HFETs practical high-voltage high-power switches for power-electronics applications

SiO\u3csub\u3e2\u3c/sub\u3e-Passivated Lateral-Geometry GaN Transparent Schottky-Barrier Detectors

We report on a transparent Schottky-barrierultraviolet detector on GaN layers over sapphire substrates. Using SiO2 surface passivation, reverse leakage currents were reduced to a value as low as 1 pA at 5 V reverse bias for 200 μm diameter device. The device exhibits a high internal gain, about 50, at low forward biases. The response time (about 15 ns) is RC limited, even in the internal gain regime. A record low level of the noise spectral density, 5×10−23 A2/Hz, was measured at 10 Hz. We attribute this low noise level to the reduced reverse leakage current

Indium-Silicon Co-Doping of High-Aluminum-Content AlGaN for Solar Blind Photodetectors

We report on an indium–silicon co-doping approach for high-Al-content AlGaN layers. Using this approach, very smooth crack-free n-type AlGaN films as thick as 0.5 μm with Al mole fraction up to 40% were grown over sapphire substrates. The maximum electron concentration in the layers, as determined by Hall measurements, was as high as 8×1017 cm−3 and the Hall mobility was up to 40 cm2/Vs. We used this doping technique to demonstrate solar-blind transparent Schottky barrierphotodetectors with the cut-off wavelength of 278 nm

Indium–silicon co-doping of high-aluminum-content AlGaN for solar blind photodetectors

We report on an indium–silicon co-doping approach for high-Al-content AlGaN layers. Using this approach, very smooth crack-free n-type AlGaN films as thick as 0.5 μm with Al mole fraction up to 40% were grown over sapphire substrates. The maximum electron concentration in the layers, as determined by Hall measurements, was as high as 8×1017 cm−3 and the Hall mobility was up to 40 cm2/Vs. We used this doping technique to demonstrate solar-blind transparent Schottky barrierphotodetectors with the cut-off wavelength of 278 nm

Mechanism of Current Collapse Removal in Field-Plated Nitride HFETs

An experimental study of the mechanism of RF current collapse removal in high-power nitride-based HFETs is presented. The results show that the conductivity of the dielectric material under the field plate plays a crucial role in the current collapse removal. Identical geometry field plated HFETs differing only in the FP dielectric conductivity show varying degree of current collapse removal. Devices with semiconducting dielectric layers exhibit perfectly linear RF power - drain bias dependence with the output powers of 20 W/mm at 55 V drain bias with essentially no current collapse. A trapped charge discharging model is presented to explain the removal of current collapse in FPd devices