Kinetic modeling of microscopic processes during electron cyclotron resonance microwave plasma-assisted molecular beam epitaxial growth of GaN/GaAs-based heterostructures

Microscopic growth processes associated with GaN/GaAs molecular beam epitaxy (MBE) are examined through the introduction of a first-order kinetic model. The model is applied to the electron cyclotron resonance microwave plasma-assisted MBE (ECR-MBE) growth of a set of delta-GaNyAs1–y/GaAs strained-layer superlattices that consist of nitrided GaAs monolayers separated by GaAs spacers, and that exhibit a strong decrease of y with increasing T over the range 540–580 °C. This y(T) dependence is quantitatively explained in terms of microscopic anion exchange, and thermally activated N surface-desorption and surface-segregation processes. N surface segregation is found to be significant during GaAs overgrowth of GaNyAs1–y layers at typical GaN ECR-MBE growth temperatures, with an estimated activation energy Es ~ 0.9 eV. The observed y(T) dependence is shown to result from a combination of N surface segregation/desorption processes

Bertolt Brecht (1898–1956).Vida e Obra

Com o aumento da população nos últimos anos, a indústria de modo geral tem se adequado à demanda resultante. A indústria do processo de recauchutagem de pneus gera resíduos que em sua maioria têm sido descartados sem nenhum controle. Este fato contribui para aumentar a poluição ambiental e favorecer a proliferação de vetores nocivos à saúde. Visando encontrar uma aplicação para esse tipo de resíduo, neste trabalho serão apresentados resultados experimentais de blocos intertravados para pavimentos de concreto, com traços adicionados de resíduos de pneus. Foram confeccionados blocos intertravados em que se determinou, por meio de ensaios laboratoriais, a necessidade de se fixar o traço que desse maior retorno quanto às características analisadas. Verificaram-se quatro tipos de traços de concreto com resíduos de pneus. Procedeu-se aos ensaios de resistência mecânica à compressão, absorção de água e resistência ao impacto. Pelos resultados preliminares obtidos, verificou-se que são satisfatórios, confirmando-se a possibilidade de aplicação desse tipo de bloco intertravado em ambientes com solicitações baixas, o que traria, além da economia das fontes naturais de agregados, benefícios ecológicos pela reutilização dos resíduos da recauchutagem de pneus

Scanning Tunneling Microscopy and Tunneling Luminescence of the Surface of GaN Films Grown by Vapor Phase Epitaxy

We report scanning tunneling microscopy (STM) images of surfaces of GaN films and the observation of luminescence from those films induced by highly spatially localized injection of electrons or holes using STM. This combination of scanning tunneling luminescence (STL) with STM for GaN surfaces and the ability to observe both morphology and luminescence in GaN is the first step to investigate possible correlations between surface morphology and optical properties.Comment: 12 pages, Revtex 3.0, submitted to Appl. Phys. Lett., three figures available from Jian Ma at [email protected]

A new generalized Kohn-Sham method for fundamental band-gaps in solids

We developed a method for calculating solid-state ground-state properties and fundamental band-gaps using a generalized Kohn-Sham approach combining a local density approximation (LDA) functional with a long-range explicit exchange orbital functional. We found that when the range parameter is selected according to the formula \gamma=A/(\eps_\inf - \eps_\tilde) where \eps_\inf is the optical dielectric constant of the solid and \eps_\tilde= 0.84 and A= 0.216a0^(-1), predictions of the fundamental band-gap close to the experimental values are obtained for a variety of solids of different types. For most solids the range parameter \gamma is small (i.e. explicit exchange is needed only at long distances) so the predicted values for lattice constants and bulk modulii are similar to those based on conventional LDA calculations

Electronic dielectric constants of insulators by the polarization method

We discuss a non-perturbative, technically straightforward, easy-to-use, and computationally affordable method, based on polarization theory, for the calculation of the electronic dielectric constant of insulating solids at the first principles level. We apply the method to GaAs, AlAs, InN, SiC, ZnO, GaN, AlN, BeO, LiF, PbTiO$_3$, and CaTiO$_3$. The predicted \einf's agree well with those given by Density Functional Perturbation Theory (the reference theoretical treatment), and they are generally within less than 10 % of experiment.Comment: RevTeX 4 pages, 2 ps figure

Compressive strength and microstructure of alkali-activated blast furnace slag/sewage sludge ash (GGBS/SSA) blends cured at room temperature

In the present work, ground granulated blast furnace slag (GGBS) and sewage sludge ash (SSA) blends were assessed for the production of alkali-activated pastes and mortars. Percentages of SSA to substitute GGBS ranged from 0–30 wt.% and sodium concentrations of 6–10 mol.kg-1 were used for the activating solutions. Pastes and mortars were cured at 20 ºC for up to 90 days. Raw materials were characterised by granulometric analysis, XRF, XRD, FTIR and SEM techniques. The replacement percentage of GGBS by SSA and the sodium hydroxide concentration of the alkaline activator were optimised to produce mortar with compressive strengths close to 30 MPa after 28 curing days at room temperature. Best results were obtained in samples blended with 20 wt.% SSA activated with 6 mol.kg-1 NaOH solutions which, according to the XRD, FTIR and microscopic results, contained higher amounts of (N,C)-A-S-H gel. The potential use of SSA for the development of alternative cementitious materials at room temperature has been demonstrated