249 research outputs found

    Sub-Kelvin Lateral Thermal Transport in Diffusive Graphene

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    In this work, we report on hot carrier diffusion in graphene across large enough length scales that the carriers are not thermalized across the crystal. The carriers are injected into graphene at one site and their thermal transport is studied as a function of applied power and distance from the heating source, up to tens of micrometers away. Superconducting contacts prevent out-diffusion of hot carriers to isolate the electron-phonon coupling as the sole channel for thermal relaxation. As local thermometers, we use the amplitude of the Universal Conductance Fluctuations, which varies monotonically as a function of temperature. By measuring the electron temperature simultaneously along the length we observe a thermal gradient which results from the competition between electron-phonon cooling and lateral heat flow

    Chiral Quasiparticle Tunneling Between Quantum Hall Edges in Proximity with a Superconductor

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    We study a two-terminal graphene Josephson junction with contacts shaped to form a narrow constriction, less than 100nm in length. The contacts are made from type II superconducting contacts and able to withstand magnetic fields high enough to reach the quantum Hall (QH) regime in graphene. In this regime, the device conductance is determined by edge states, plus the contribution from the constricted region. In particular, the constriction area can support supercurrents up to fields of ~2.5T. Moreover, enhanced conductance is observed through a wide range of magnetic fields and gate voltages. This additional conductance and the appearance of supercurrent is attributed to the tunneling between counter-propagating quantum Hall edge states along opposite superconducting contacts.Comment: 4 pages, 3 figure

    Loss and Dynamic Magnetic Field Measurements in LHC Dipoles

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    Knowledge of AC loss and dynamic magnetic field distortion in the main LHC dipoles is both important for the assessment of the accelerator performance and providing insight into the properties of assembled magnets. We measured the loss due to the current cycling in a few 1-meter long model dipoles, 15-meter long dipole prototypes and pre-series magnets. As expected the loss depends linearly on the rate of the current change. From the slope of this dependence, the contact resistance between the strands of the opposite layers of the cable, Rc, was evaluated for the inner winding of the dipole. We discuss the method to estimate the Rc value in the outer winding. The Rc value has been also derived independently from measurements of the magnetic field. For this, the ramp rate dependent component of the main field as well as of the harmonics has been measured. The main magnetic field measurements were performed using both stationary coils and Hall probes. Rotating coils were used to perform the harmonic measurements

    Objective classification of fabric pilling based on the two-dimensional discrete wavelet transform

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    A number of methods for automated objective ratings of fabric pilling based on image analysis are described in the literature. The periodic structure of fabrics makes them suitable candidates for frequency domain analysis. We propose a new method of frequency domain analysis based on the two-dimensional discrete wavelet transform to objectively measure pilling intensity in sample images. We present a preliminary evaluation of the proposed method based on analysis of two series of standard pilling evaluation test images. The initial results suggest that the proposed method is feasible, and that the ability of the method to discriminate between levels of pilling intensity depends on the wavelet analysis scale being closely matched to the fabric interyarn pitch. We also present a heuristic method for optimal selection of an analysis wavelet and associated analysis scale. <br /

    A high-affinity inhibitor of human CD59 enhances complement-mediated virolysis of HIV-1: implications for treatment of HIV-1/AIDS

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    Many pathogenic enveloped viruses, including HIV-1, escape complement-mediated virolysis by incorporating host cell regulators of complement activation into their own viral envelope. The presence of complement regulators including CD59 on the external surface of the viral envelope confers resistance to complement-mediated virolysis, which may explain why human pathogenic viruses such as HIV-1 are not neutralized by complement in human fluids, even in the presence of high Ab titers against the viral surface proteins. In this study, we report the development of a recombinant form of the fourth domain of the bacterial toxin intermedilysin (the recombinant domain 4 of intermedilysin [rILYd4]), a 114 aa protein that inhibits human CD59 function with high affinity and specificity. In the presence of rILYd4, HIV-1 virions derived from either cell lines or peripheral blood mononuclear cells of HIV-1-infected patients became highly sensitive to complement-mediated lysis activated by either anti-HIV-1 gp120 Abs or by viral infection-induced Abs present in the plasma of HIV-1-infected individuals. We also demonstrated that rILYd4 together with serum or plasma from HIV-1-infected patients as a source of anti-HIV-1 Abs and complement did not mediate complement-mediated lysis of either erythrocytes or peripheral blood mononuclear cells. These results indicate that rILYd4 may represent a novel therapeutic agent against HIV-1/AIDS

    Persistent and Coupling Current Effects in the LHC Superconducting Dipoles

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    One of the main issues for the operation of the LHC accelerator at CERN is the field errors generated by persistent and coupling currents in the main dipoles at injection conditions, i.e., 0.54 T dipole field. For this reason we are conducting systematic magnetic field measurements to quantify the above effects and compare them to the expected values from measurement on strands and cables. We discuss the results in terms of DC effects from persistent current magnetization, AC effects with short time constant from strand and cable coupling currents, and long-term decay during constant current excitation. Average and spread of the measured field errors over the population of magnets tested are as expected or smaller. Field decay at injection, and subsequent snap-back, show for the moment the largest variation from magnet to magnet, with weak correlation to parameters that can be controlled during production. For this reason these effects are likely to result in the largest spread of field errors over the whole dipole production

    Atomically thin boron nitride: a tunnelling barrier for graphene devices

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    We investigate the electronic properties of heterostructures based on ultrathin hexagonal boron nitride (h-BN) crystalline layers sandwiched between two layers of graphene as well as other conducting materials (graphite, gold). The tunnel conductance depends exponentially on the number of h-BN atomic layers, down to a monolayer thickness. Exponential behaviour of I-V characteristics for graphene/BN/graphene and graphite/BN/graphite devices is determined mainly by the changes in the density of states with bias voltage in the electrodes. Conductive atomic force microscopy scans across h-BN terraces of different thickness reveal a high level of uniformity in the tunnel current. Our results demonstrate that atomically thin h-BN acts as a defect-free dielectric with a high breakdown field; it offers great potential for applications in tunnel devices and in field-effect transistors with a high carrier density in the conducting channel.Comment: 7 pages, 5 figure

    Signatures of phonon and defect-assisted tunneling in planar metal-hexagonal boron nitride-graphene junctions

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    Electron tunneling spectroscopy measurements on van der Waals heterostructures consisting of metal and graphene (or graphite) electrodes separated by atomically thin hexagonal boron nitride tunnel barriers are reported. The tunneling conductance, dI/dV, at low voltages is relatively weak, with a strong enhancement reproducibly observed to occur at around |V| ≈ 50 mV. While the weak tunneling at low energies is attributed to the absence of substantial overlap, in momentum space, of the metal and graphene Fermi surfaces, the enhancement at higher energies signals the onset of inelastic processes in which phonons in the heterostructure provide the momentum necessary to link the Fermi surfaces. Pronounced peaks in the second derivative of the tunnel current, d2I/dV2, are observed at voltages where known phonon modes in the tunnel junction have a high density of states. In addition, features in the tunneling conductance attributed to single electron charging of nanometer-scale defects in the boron nitride are also observed in these devices. The small electronic density of states of graphene allows the charging spectra of these defect states to be electrostatically tuned, leading to “Coulomb diamonds” in the tunneling conductance
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