Graphane Nanoribbons: A Theoretical Study

In this study, we investigate the electronic and magnetic properties of graphane nanoribbons. We find that zigzag and armchair graphane nanoribbons with H-passivated edges are nonmagnetic semiconductors. While bare armchair ribbons are also nonmagnetic, adjacent dangling bonds of bare zigzag ribbons have antiferromagnetic ordering at the same edge. Band gaps of the H-passivated zigzag and armchair nanoribbons exponentially depend on their width. Detailed analysis of adsorption of C, O, Si, Pt, Ti, V and Fe atoms on the graphane ribbon surface reveal that functionalization of graphane ribbons is possible via these adatoms. It is found that C, O, V and Pt atoms have tendency to replace H atoms of graphane. We showed that significant spin polarizations in graphane can be achieved through creation of domains of H-vacancies and CH-divacancies.Comment: Accepted for publication in Phys. Rev. B 81, xxxx (2010); http://link.aps.org/doi/10.1103/PhysRevB.81.20541

Functionalization of BN Honeycomb structure by Adsorption and Substitution of Foreign atoms

We carried out first-principles calculations within Density Functional Theory to investigate the structural, electronic and magnetic properties of boron-nitride (BN) honeycomb structure functionalized by adatom adsorption, as well as by the substitution of foreign atoms for B and N atoms. For periodic high density coverage, most of $3d$ transition metal atoms and some of group 3A, 4A, and 6A elements are adsorbed with significant binding energy and modify the electronic structure of bare BN monolayer. While bare BN monolayer is nonmagnetic, wide band gap semiconductor, at high coverage of specific adatoms it can achieve magnetic metallic, even half-metallic ground states. At low coverage, the bands associated with adsorbed atoms are flat and the band structure of parent BN is not affected significantly. Therefore, adatoms and substitution of foreign atoms at low coverage are taken to be the representative of impurity atoms yielding localized states in the band gap and resonance states in the band continua. Notably, the substitution of C for B and N yield donor and acceptor like magnetic states in the band gap. Localized impurity states occurring in the gap give rise to interesting properties for electronic and optical application of the single layer BN honeycomb structure.Comment: 10 pages, 6 figures, 4 table

Dissociation of H2O at the vacancies of single layer MoS2

Cataloged from PDF version of article.Based on first-principles density functional theory and finite temperature molecular dynamics calculations, we predict that H2O can be dissociated into its constituents O and H at specific vacancy defects of single-layer MoS2 honeycomb structure, which subsequently are bound to fourfolded Mo and twofolded S atoms surrounding the vacancy, respectively. This exothermic and spontaneous process occurs, since the electronegativity and ionization energy of Mo are smaller than those of H. Once desorbed from twofolded S atoms, H atoms migrate readily on the MoS2 surface and eventually form free H-2 molecules to be released from the surface. Present results are critical for acquiring clean and sustainable energy from hydrogen

Magnetization of Graphane by Dehydrogenation

Each single hydrogen vacancy created at the surface of graphane gives rise to a local unpaired spin. For domains of hydrogen vacancies the situation is, however complex and depends on the size and geometry of domains, as well as whether the domains are single- or double-sided. In single-sided domains, hydrogen atoms at the other side are relocated to pair the spins of adjacent carbon atoms by forming pi-bonds. Owing to the different characters of exchange coupling in different ranges and interplay between unpaired spin and the binding geometry of hydrogen, vacancy domains can attain sizable net magnetic moments. Our results based on the first-principles calculations suggest that the size and ordering of magnetic moments of hydrogen vacancy domains with thin walls can be used for future data storage and spintronics applications.Comment: 4 pages, 3 figures (published in Applied Physics Letters

Effects of silicon and germanium adsorbed on graphene

Cataloged from PDF version of article.Based on the first-principles plane wave calculations, we studied the adsorption of Si and Ge on graphene. We found that these atoms are bound to graphene at the bridge site with a significant binding energy, while many other atoms are bound at the hollow site above the center of hexagon. It is remarkable that these adatoms may induce important changes in the electronic structure of graphene even at low coverage. Semimetallic graphene becomes metallized and attains a magnetic moment. The combination of adatom orbitals with those of pi- and pi(*)-states of bare graphene is found responsible for these effects

Perpendicular growth of carbon chains on graphene from first-principles

Cataloged from PDF version of article.Based on first-principles calculations we predict a peculiar growth process, where carbon adatoms adsorbed to graphene readily diffuse above room temperature and nucleate segments of linear carbon chains attached to graphene. These chains grow longer on graphene through insertion of carbon atoms one at a time from the bottom end and display a self-assembling behavior. Eventually, two allotropes of carbon, namely graphene and cumulene, are combined to exhibit important functionalities. The segments of carbon chains on graphene become chemically active sites to bind foreign atoms or large molecules. When bound to the ends of carbon chains, transition metal atoms, Ti, Co, and Au, attribute a magnetic ground state to graphene sheets and mediate stable contacts with interconnects. We showed that carbon chains can grow also on single-wall carbon nanotubes