Understanding and Improving the Wang-Landau Algorithm

We present a mathematical analysis of the Wang-Landau algorithm, prove its convergence, identify sources of errors and strategies for optimization. In particular, we found the histogram increases uniformly with small fluctuation after a stage of initial accumulation, and the statistical error is found to scale as $\sqrt{\ln f}$ with the modification factor $f$. This has implications for strategies for obtaining fast convergence.Comment: 4 pages, 2 figures, to appear in Phys. Rev.

Surface code architecture for donors and dots in silicon with imprecise and nonuniform qubit couplings

A scaled quantum computer with donor spins in silicon would benefit from a viable semiconductor framework and a strong inherent decoupling of the qubits from the noisy environment. Coupling neighbouring spins via the natural exchange interaction according to current designs requires gate control structures with extremely small length scales. We present a silicon architecture where bismuth donors with long coherence times are coupled to electrons that can shuttle between adjacent quantum dots, thus relaxing the pitch requirements and allowing space between donors for classical control devices. An adiabatic SWAP operation within each donor/dot pair solves the scalability issues intrinsic to exchange-based two-qubit gates, as it does not rely on sub-nanometer precision in donor placement and is robust against noise in the control fields. We use this SWAP together with well established global microwave Rabi pulses and parallel electron shuttling to construct a surface code that needs minimal, feasible local control.Comment: Published version - more detailed discussions, robustness to dephasing pointed out additionall

Hopping Conduction in Uniaxially Stressed Si:B near the Insulator-Metal Transition

Using uniaxial stress to tune the critical density near that of the sample, we have studied in detail the low-temperature conductivity of p-type Si:B in the insulating phase very near the metal-insulator transition. For all values of temperature and stress, the conductivity collapses onto a single universal scaling curve. For large values of the argument, the scaling function is well fit by the exponentially activated form associated with variable range hopping when electron-electron interactions cause a soft Coulomb gap in the density of states at the Fermi energy. The temperature dependence of the prefactor, corresponding to the T-dependence of the critical curve, has been determined reliably for this system, and is proportional to the square-root of T. We show explicitly that nevlecting the prefactor leads to substantial errors in the determination of the scaling parameters and the critical exponents derived from them. The conductivity is not consistent with Mott variable-range hopping in the critical region nor does it obey this form for any range of the parameters. Instead, for smaller argument of the scaling function, the conductivity of Si:B is well fit by an exponential form with exponent 0.31 related to the critical exponents of the system at the metal- insulator transition.Comment: 13 pages, 6 figure

Exchange Monte Carlo Method and Application to Spin Glass Simulations

We propose an efficient Monte Carlo algorithm for simulating a ``hardly-relaxing" system, in which many replicas with different temperatures are simultaneously simulated and a virtual process exchanging configurations of these replica is introduced. This exchange process is expected to let the system at low temperatures escape from a local minimum. By using this algorithm the three-dimensional $\pm J$ Ising spin glass model is studied. The ergodicity time in this method is found much smaller than that of the multi-canonical method. In particular the time correlation function almost follows an exponential decay whose relaxation time is comparable to the ergodicity time at low temperatures. It suggests that the system relaxes very rapidly through the exchange process even in the low temperature phase.Comment: 10 pages + uuencoded 5 Postscript figures, REVTe

Exchange coupling between silicon donors: the crucial role of the central cell and mass anisotropy

Donors in silicon are now demonstrated as one of the leading candidates for implementing qubits and quantum information processing. Single qubit operations, measurements and long coherence times are firmly established, but progress on controlling two qubit interactions has been slower. One reason for this is that the inter donor exchange coupling has been predicted to oscillate with separation, making it hard to estimate in device designs. We present a multivalley effective mass theory of a donor pair in silicon, including both a central cell potential and the effective mass anisotropy intrinsic in the Si conduction band. We are able to accurately describe the single donor properties of valley-orbit coupling and the spatial extent of donor wave functions, highlighting the importance of fitting measured values of hyperfine coupling and the orbital energy of the $1s$ levels. Ours is a simple framework that can be applied flexibly to a range of experimental scenarios, but it is nonetheless able to provide fast and reliable predictions. We use it to estimate the exchange coupling between two donor electrons and we find a smoothing of its expected oscillations, and predict a monotonic dependence on separation if two donors are spaced precisely along the [100] direction.Comment: Published version. Corrected b and B values from previous versio

Spin Waves in Disordered III-V Diluted Magnetic Semiconductors

We propose a new scheme for numerically computing collective-mode spectra for large-size systems, using a reformulation of the Random Phase Approximation. In this study, we apply this method to investigate the spectrum and nature of the spin-waves of a (III,Mn)V Diluted Magnetic Semiconductor. We use an impurity band picture to describe the interaction of the charge carriers with the local Mn spins. The spin-wave spectrum is shown to depend sensitively on the positional disorder of the Mn atoms inside the host semiconductor. Both localized and extended spin-wave modes are found. Unusual spin and charge transport is implied.Comment: 14 pages, including 11 figure

Absence of Conventional Spin-Glass Transition in the Ising Dipolar System LiHo_xY_{1-x}F_4

The magnetic properties of single crystals of LiHo_xY_{1-x}F_4 with x=16.5% and x=4.5% were recorded down to 35 mK using a micro-SQUID magnetometer. While this system is considered as the archetypal quantum spin glass, the detailed analysis of our magnetization data indicates the absence of a phase transition, not only in a transverse applied magnetic field, but also without field. A zero-Kelvin phase transition is also unlikely, as the magnetization seems to follow a non-critical exponential dependence on the temperature. Our analysis thus unmasks the true, short-ranged nature of the magnetic properties of the LiHo_xY_{1-x}F_4 system, validating recent theoretical investigations suggesting the lack of phase transition in this system.Comment: 5 pages, 4 figure

Photometric study of distant open clusters in the second quadrant: NGC 7245, King 9, King 13 and IC 166

We present a UBV CCD photometric study of four open clusters, NGC 7245, King 9, IC 166 and King 13, located between $l = 90^o - 135^o$. All are embedded in a rich galactic field. NGC 7245 and King 9 are close together in the sky and have similar reddenings. The distances and ages are: NGC 7245, 3.8$\pm$0.35 kpc and 400 Myr; King 9 (the most distant cluster in this quadrant) 7.9$\pm$1.1 kpc and 3.0 Gyr. King 13 is 3.1$\pm$0.3 kpc distant and 300 Myr old. King 9 and IC 166 (4.8$\pm$0.5 kpc distant & 1 Gyr old) may be metal poor clusters (Z=0.008), as estimated from isochrone fitting. The average value of the distance of young clusters from the galactic plane in the above longitude range and beyond 2 kpc ($-47\pm$16 pc, for 64 clusters), indicates that the young disk bends towards the southern latitudes