Comment on "Observation of Spin Injection at a Ferromagnet-Semiconductor Interface, by P.R. Hammar et al

In a recent Letter Hammar et al. claim the observation of injection of a spin-polarized current in a two-dimensional electron gas (2DEG). This is an important observation, since, despite considerable effort of several groups, all attempts to realize spin-injection into a 2DEG using purely electrical measurements have failed sofar. However, in my opinion the claim made is not correct, and the observed behaviour can be explained by a combination of a magneto resistance (Hall) effect (e.g. generated by the fringe magnetic fields present at the edges of the ferromagnetic electrode), with a {\it spin-independent} rectification effect due to the presence of a metal- semiconductor junction.Comment: accepted for PRL, 1 pag

A reappraisal of generic bisphosphonates in osteoporosis

UNLABELLED: The competitive price of generic bisphosphonates has had a marked effect on practice guidelines, but an increasing body of evidence suggests that they have more limited effectiveness than generally assumed. INTRODUCTION: The purpose of this study is to review the impact of generic bisphosphonates on effectiveness in the treatment of osteoporosis. METHODS: This study is a literature review. RESULTS: A substantial body of evidence indicates that many generic formulations of alendronate are more poorly tolerated than the proprietary preparations which results in significantly poorer adherence and thus effectiveness. Poorer effectiveness may result from faster disintegration times of many generics that increase the likelihood of adherence of particulate matter to the oesophageal mucosa. Unfortunately, market authorisation, based on the bioequivalence of generics with a proprietary formulation, does not take into account the potential concerns about safety. The poor adherence of many generic products has implications for guideline development, cost-effectiveness and impact of treatment on the burden of disease. CONCLUSIONS: The impact of generic bisphosphonates requires formal testing to re-evaluate their role in the management of osteoporosis

Spin Hall effect transistor

Spin transistors and spin Hall effects have been two separate leading directions of research in semiconductor spintronics which seeks new paradigms for information processing technologies. We have brought the two directions together to realize an all-semiconductor spin Hall effect transistor. Our scheme circumvents semiconductor-ferromagnet interface problems of the original Datta-Das spin transistor concept and demonstrates the utility of the spin Hall effects in microelectronics. The devices use diffusive transport and operate without electrical current, i.e., without Joule heating in the active part of the transistor. We demonstrate a spin AND logic function in a semiconductor channel with two gates. Our experimental study is complemented by numerical Monte Carlo simulations of spin-diffusion through the transistor channel.Comment: 11 pages, 3 figure

Diffuse transport and spin accumulation in a Rashba two-dimensional electron gas

The Rashba Hamiltonian describes the splitting of the conduction band as a result of spin-orbit coupling in the presence of an asymmetric confinement potential and is commonly used to model the electronic structure of confined narrow-gap semiconductors. Due to the mixing of spin states some care has to be exercised in the calculation of transport properties. We derive the diffusive conductance tensor for a disordered two-dimensional electron gas with spin-orbit interaction and show that the applied bias induces a spin accumulation, but that the electric current is not spin-polarized.Comment: REVTeX4 format, 5 page

Spin-polarized transport in inhomogeneous magnetic semiconductors: theory of magnetic/nonmagnetic p-n junctions

A theory of spin-polarized transport in inhomogeneous magnetic semiconductors is developed and applied to magnetic/nonmagnetic p-n junctions. Several phenomena with possible spintronic applications are predicted, including spinvoltaic effect, spin valve effect, and giant magnetoresistance. It is demonstrated that only nonequilibrium spin can be injected across the space-charge region of a p-n junction, so that there is no spin injection (or extraction) at low bias.Comment: Minor Revisions. To appear in Phys. Rev. Let

Field-Induced Magnetic Order in Quantum Spin Liquids

We study magnetic field-induced three-dimensional ordering transitions in low-dimensional quantum spin liquids, such as weakly coupled, antiferromagnetic spin-1/2 Heisenberg dimers and ladders. Using stochastic series expansion quantum Monte Carlo simulations, thermodynamic response functions are obtained down to ultra-low temperatures. We extract the critical scaling exponents which dictate the power-law dependence of the transition temperature on the applied magnetic field. These are compared with recent experiments on candidate materials and with predictions for the Bose-Einstein condensation of magnons obtained in mean-field theory.Comment: RevTex, 4 pages with 5 figure

A low-dimensional spin S = 1/2 system at the quantum critical limit: Na2V2O7

We report the results of measurements of the dc-susceptibility and the 23Na-NMR response of Na2V2O7, a recently synthesized, non metallic low dimensional spin system. Our results indicate that upon reducing the temperature to below 100 K, the V^{4+} moments are gradually quenched, leaving only one moment out of 9 active. The NMR data reveal a phase transition at very low temperatures. With decreasing applied field H, the critical temperature shifts towards T = 0 K, suggesting that Na2V2O7 may be regarded as an insulator reaching a quantum critical point at H = 0.Comment: 4 pages, 5 figure

Neutron Diffraction Study of the Pressure-Induced Magnetic Ordering in the Spin Gap System TlCuCl3_3

Neutron elastic scattering measurements have been performed under the hydrostatic pressure in order to investigate the spin structure of the pressure-induced magnetic ordering in the spin gap system TlCuCl$_3$. Below the ordering temperature $T_{\rm N}=16.9$ K for the hydrostatic pressure $P=1.48$ GPa, magnetic Bragg reflections were observed at the reciprocal lattice points {\mib Q}=(h, 0, l) with integer $h$ and odd $l$, which are equivalent to those points with the lowest magnetic excitation energy at ambient pressure. This indicates that the spin gap closes due to the applied pressure. The spin structure of the pressure-induced magnetic ordered state for $P=1.48$ GPa was determined.Comment: 4 pages, 3 figures, 3 eps files, jpsj2.cls styl

Neutron Scattering Study of Magnetic Ordering and Excitations in the Doped Spin Gap System Tl(Cu1−x_{1-x}Mgx_x)Cl3_3

Neutron elastic and inelastic scattering measurements have been performed in order to investigate the spin structure and the magnetic excitations in the impurity-induced antiferromagnetic ordered phase of the doped spin gap system Tl(Cu$_{1-x}$Mg$_x$)Cl$_3$ with $x=0.03$. The magnetic Bragg reflections indicative of the ordering were observed at ${\pmb Q}=(h, 0, l)$ with integer $h$ and odd $l$ below $T_{\rm N}=3.45$ K. It was found that the spin structure of the impurity-induced antiferromagnetic ordered phase on average in Tl(Cu$_{1-x}$Mg$_x$)Cl$_3$ with $x=0.03$ is the same as that of the field-induced magnetic ordered phase for ${\pmb H} \parallel b$ in the parent compound TlCuCl$_3$. The triplet magnetic excitation was clearly observed in the $a^*$-$c^*$ plane and the dispersion relations of the triplet excitation were determined along four different directions. The lowest triplet excitation corresponding to the spin gap was observed at ${\pmb Q}=(h, 0, l)$ with integer $h$ and odd $l$, as observed in TlCuCl$_3$. It was also found that the spin gap increases steeply below $T_{\rm N}$ upon decreasing temperature. This strongly indicates that the impurity-induced antiferromagnetic ordering coexists with the spin gap state in Tl(Cu$_{1-x}$Mg$_x$)Cl$_3$ with $x=0.03$.Comment: 24 pages, 7 figures, 11 eps files, revtex style, will appear in Phys. Rev.