Orbital magnetoelectric coupling in band insulators

Magnetoelectric responses are a fundamental characteristic of materials that break time-reversal and inversion symmetries (notably multiferroics) and, remarkably, of "topological insulators" in which those symmetries are unbroken. Previous work has shown how to compute spin and lattice contributions to the magnetoelectric tensor. Here we solve the problem of orbital contributions by computing the frozen-lattice electronic polarization induced by a magnetic field. One part of this response (the "Chern-Simons term") can appear even in time-reversal-symmetric materials and has been previously shown to be quantized in topological insulators. In general materials there are additional orbital contributions to all parts of the magnetoelectric tensor; these vanish in topological insulators by symmetry and also vanish in several simplified models without time-reversal and inversion those magnetoelectric couplings were studied before. We give two derivations of the response formula, one based on a uniform magnetic field and one based on extrapolation of a long-wavelength magnetic field, and discuss some of the consequences of this formula.Comment: 13 page

High field transport in strained Si/GeSi double heterostructure: a Fokker-Planck approach

We report calculations of high electric field transport for the case of a strained Si/GeSi double heterostructure (DHS) considering transport along the Si channel and by applying the analytical Fokker-Planck approach (FPA), where the process is modeled as drift-diffusion in energy space. We limit ourselves to electronic transport in the conduction band of the strained Si, where an energy shift between the otherwise degenerate six energy valleys characterizes the band alingment in the DHS. Intervalley phonon scatterings are considered while intravalley acoustic phonon scattering is ignored, leading to results valid for high enough temperatures. Our results are compared to previous theoretical works where Monte Carlo simulations were applied. A reasonable agreement between the two approaches is obtained in the high electric field regime.Comment: 8 pages, 3 figure

Reliability assessment of the GEOS A power supply

Reliability assessment of geodetic satellite A power suppl

Diffuse emission in the presence of inhomogeneous spin-orbit interaction for the purpose of spin filtration

A lateral interface connecting two regions with different strengths of the Bychkov-Rashba spin-orbit interaction can be used as a spin polarizer of electrons in two dimensional semiconductor heterostructures. [Khodas \emph{et al.}, Phys. Rev. Lett. \textbf{92}, 086602 (2004)]. In this paper we consider the case when one of the two regions is ballistic, while the other one is diffusive. We generalize the technique developed for the solution of the problem of the diffuse emission to the case of the spin dependent scattering at the interface, and determine the distribution of electrons emitted from the diffusive region. It is shown that the diffuse emission is an effective way to get electrons propagating at small angles to the interface that are most appropriate for the spin filtration and a subsequent spin manipulation. Finally, a scheme is proposed of a spin filter device, see Fig. 9, that creates two almost fully spin-polarized beams of electrons.Comment: 11 pages, 9 figure

Electron-phonon bound states in graphene in a perpendicular magnetic field

The spectrum of electron-phonon complexes in a monolayer graphene is investigated in the presence of a perpendicular quantizing magnetic field. Despite the small electron-phonon coupling, usual perturbation theory is inapplicable for calculation of the scattering amplitude near the threshold of the optical phonon emission. Our findings beyond perturbation theory show that the true spectrum near the phonon emission threshold is completely governed by new branches, corresponding to bound states of an electron and an optical phonon with a binding energy of the order of $\alpha \omega_{0}$ where $\alpha$ is the electron-phonon coupling and $\omega_{0}$ the phonon energy.Comment: To be published in Phys. Rev. Lett., 5 pages, 3 figures, 1 tabl

Quantum dot dephasing by edge states

We calculate the dephasing rate of an electron state in a pinched quantum dot, due to Coulomb interactions between the electron in the dot and electrons in a nearby voltage biased ballistic nanostructure. The dephasing is caused by nonequilibrium time fluctuations of the electron density in the nanostructure, which create random electric fields in the dot. As a result, the electron level in the dot fluctuates in time, and the coherent part of the resonant transmission through the dot is suppressed

Acoustoelectric current and pumping in a ballistic quantum point contact

The acoustoelectric current induced by a surface acoustic wave (SAW) in a ballistic quantum point contact is considered using a quantum approach. We find that the current is of the "pumping" type and is not related to drag, i.e. to the momentum transfer from the wave to the electron gas. At gate voltages corresponding to the plateaus of the quantized conductance the current is small. It is peaked at the conductance step voltages. The peak current oscillates and decays with increasing SAW wavenumber for short wavelengths. These results contradict previous calculations, based on the classical Boltzmann equation.Comment: 4 pages, 1 figur