Cosmological perturbations on local systems

We study the effect of cosmological expansion on orbits--galactic, planetary, or atomic--subject to an inverse-square force law. We obtain the laws of motion for gravitational or electrical interactions from general relativity--in particular, we find the gravitational field of a mass distribution in an expanding universe by applying perturbation theory to the Robertson-Walker metric. Cosmological expansion induces an ($\ddot a/a) \vec r$ force where $a(t)$ is the cosmological scale factor. In a locally Newtonian framework, we show that the $(\ddot a/a) \vec r$ term represents the effect of a continuous distribution of cosmological material in Hubble flow, and that the total force on an object, due to the cosmological material plus the matter perturbation, can be represented as the negative gradient of a gravitational potential whose source is the material actually present. We also consider the effect on local dynamics of the cosmological constant. We calculate the perihelion precession of elliptical orbits due to the cosmological constant induced force, and work out a generalized virial relation applicable to gravitationally bound clusters.Comment: 10 page

Frequency dispersion reduction and bond conversion on n-type GaAs by in situ surface oxide removal and passivation

The method of surface preparation on n-type GaAs, even with the presence of an amorphous-Si interfacial passivation layer, is shown to be a critical step in the removal of accumulation capacitance frequency dispersion. In situ deposition and analysis techniques were used to study different surface preparations, including NH4OH, Si-flux, and atomic hydrogen exposures, as well as Si passivation depositions prior to in situ atomic layer deposition of Al2O3. As–O bonding was removed and a bond conversion process with Si deposition is observed. The accumulation capacitance frequency dispersion was removed only when a Si interlayer and a specific surface clean were combined

Instabilities in the Nuclear Energy Density Functional

In the field of Energy Density Functionals (EDF) used in nuclear structure and dynamics, one of the unsolved issues is the stability of the functional. Numerical issues aside, some EDFs are unstable with respect to particular perturbations of the nuclear ground-state density. The aim of this contribution is to raise questions about the origin and nature of these instabilities, the techniques used to diagnose and prevent them, and the domain of density functions in which one should expect a nuclear EDF to be stable.Comment: Special issue "Open Problems in Nuclear Structure Theory" of Jour.Phys.G - accepted. 7 pages, 2 figure

GaAs interfacial self-cleaning by atomic layer deposition

The reduction and removal of surface oxides from GaAs substrates by atomic layer deposition (ALD) of Al2O3 and HfO2 are studied using in situ monochromatic x-ray photoelectron spectroscopy. Using the combination of in situ deposition and analysis techniques, the interfacial "self-cleaning" is shown to be oxidation state dependent as well as metal organic precursor dependent. Thermodynamics, charge balance, and oxygen coordination drive the removal of certain species of surface oxides while allowing others to remain. These factors suggest proper selection of surface treatments and ALD precursors can result in selective interfacial bonding arrangements