Density of states of a graphene in the presence of strong point defects

The density of states near zero energy in a graphene due to strong point defects with random positions are computed. Instead of focusing on density of states directly, we analyze eigenfunctions of inverse T-matrix in the unitary limit. Based on numerical simulations, we find that the squared magnitudes of eigenfunctions for the inverse T-matrix show random-walk behavior on defect positions. As a result, squared magnitudes of eigenfunctions have equal {\it a priori} probabilities, which further implies that the density of states is characterized by the well-known Thomas-Porter type distribution. The numerical findings of Thomas-Porter type distribution is further derived in the saddle-point limit of the corresponding replica field theory of inverse T-matrix. Furthermore, the influences of the Thomas-Porter distribution on magnetic and transport properties of a graphene, due to its divergence near zero energy, are also examined.Comment: 6 figure

Effects of Incomplete Ionization on Beta - Ga2O3 Power Devices: Unintentional Donor with Energy 110 meV

Understanding the origin of unintentional doping in Ga2O3 is key to increasing breakdown voltages of Ga2O3 based power devices. Therefore, transport and capacitance spectroscopy studies have been performed to better understand the origin of unintentional doping in Ga2O3. Previously unobserved unintentional donors in commercially available (-201) Ga2O3 substrates have been electrically characterized via temperature dependent Hall effect measurements up to 1000 K and found to have a donor energy of 110 meV. The existence of the unintentional donor is confirmed by temperature dependent admittance spectroscopy, with an activation energy of 131 meV determined via that technique, in agreement with Hall effect measurements. With the concentration of this donor determined to be in the mid to high 10^16 cm^-3 range, elimination of this donor from the drift layer of Ga2O3 power electronics devices will be key to pushing the limits of device performance. Indeed, analytical assessment of the specific on-resistance (Ronsp) and breakdown voltage of Schottky diodes containing the 110 meV donor indicates that incomplete ionization increases Ronsp and decreases breakdown voltage as compared to Ga2O3 Schottky diodes containing only the shallow donor. The reduced performance due to incomplete ionization occurs in addition to the usual tradeoff between Ronsp and breakdown voltage. To achieve 10 kV operation in Ga2O3 Schottky diode devices, analysis indicates that the concentration of 110 meV donors must be reduced below 5x10^14 cm^-3 to limit the increase in Ronsp to one percent.Comment: 23 pages, 8 figure

Studies of Efficiency of the LHCb Muon Detector Using Cosmic Rays

We study the efficiency of the muon detector using the cosmic ray events collected in the summer and autumn 2008. We find that the efficiencies in all stations are consistent with 100% for cosmic tracks coming from the LHCb interaction point, without any restriction on time. We calculate the efficiencies also per station and region and per station and quadrant, finding consistent results

Breaking a chaos-noise-based secure communication scheme

This paper studies the security of a secure communication scheme based on two discrete-time intermittently-chaotic systems synchronized via a common random driving signal. Some security defects of the scheme are revealed: 1) the key space can be remarkably reduced; 2) the decryption is insensitive to the mismatch of the secret key; 3) the key-generation process is insecure against known/chosen-plaintext attacks. The first two defects mean that the scheme is not secure enough against brute-force attacks, and the third one means that an attacker can easily break the cryptosystem by approximately estimating the secret key once he has a chance to access a fragment of the generated keystream. Yet it remains to be clarified if intermittent chaos could be used for designing secure chaotic cryptosystems.Comment: RevTeX4, 11 pages, 15 figure

Simulations of cold electroweak baryogenesis: dependence on the source of CP-violation

We compute the baryon asymmetry created in a tachyonic electroweak symmetry breaking transition, focusing on the dependence on the source of effective CP-violation. Earlier simulations of Cold Electroweak Baryogenesis have almost exclusively considered a very specific CP-violating term explicitly biasing Chern-Simons number. We compare four different dimension six, scalar-gauge CP-violating terms, involving both the Higgs field and another dynamical scalar coupled to SU(2) or U(1) gauge fields. We find that for sensible values of parameters, all implementations can generate a baryon asymmetry consistent with observations, showing that baryogenesis is a generic outcome of a fast tachyonic electroweak transition

Parameterization invariance and shape equations of elastic axisymmetric vesicles

The issue of different parameterizations of the axisymmetric vesicle shape addressed by Hu Jian-Guo and Ou-Yang Zhong-Can [ Phys.Rev. E {\bf 47} (1993) 461 ] is reassesed, especially as it transpires through the corresponding Euler - Lagrange equations of the associated elastic energy functional. It is argued that for regular, smooth contours of vesicles with spherical topology, different parameterizations of the surface are equivalent and that the corresponding Euler - Lagrange equations are in essence the same. If, however, one allows for discontinuous (higher) derivatives of the contour line at the pole, the differently parameterized Euler - Lagrange equations cease to be equivalent and describe different physical problems. It nevertheless appears to be true that the elastic energy corresponding to smooth contours remains a global minimum.Comment: 10 pages, latex, one figure include