Two Dimensional Spin-Polarized Electron Gas at the Oxide Interfaces

The formation of a novel spin-polarized 2D electron gas at the LaMnO$_3$ monolayer embedded in SrMnO$_3$ is predicted from the first-principles density-functional calculations. The La (d) electrons become confined in the direction normal to the interface in the potential well of the La layer, serving as a positively-charged layer of electron donors. These electrons mediate a ferromagnetic alignment of the Mn t$_{2g}$ spins near the interface via the Anderson-Hasegawa double exchange and become, in turn, spin-polarized due to the internal magnetic fields of the Mn moments.Comment: 5 pages, 6 figure

Strain and Electric Field Modulation of the Electronic Structure of Bilayer Graphene

We study how the electronic structure of the bilayer graphene (BLG) is changed by electric field and strain from {\it ab initio} density-functional calculations using the LMTO and the LAPW methods. Both hexagonal and Bernal stacked structures are considered. The BLG is a zero-gap semiconductor like the isolated layer of graphene. We find that while strain alone does not produce a gap in the BLG, an electric field does so in the Bernal structure but not in the hexagonal structure. The topology of the bands leads to Dirac circles with linear dispersion in the case of the hexagonally stacked BLG due to the interpenetration of the Dirac cones, while for the Bernal stacking, the dispersion is quadratic. The size of the Dirac circle increases with the applied electric field, leading to an interesting way of controlling the Fermi surface. The external electric field is screened due to polarization charges between the layers, leading to a reduced size of the band gap and the Dirac circle. The screening is substantial in both cases and diverges for the Bernal structure for small fields as has been noted by earlier authors. As a biproduct of this work, we present the tight-binding parameters for the free-standing single layer graphene as obtained by fitting to the density-functional bands, both with and without the slope constraint for the Dirac cone.Comment: 7 pages, 7 figure

Electronic structure and magnetism in doped semiconducting half-Heusler compounds

We have studied in details the electronic structure and magnetism in M (Mn and Cr) doped semiconducting half-Heusler compounds FeVSb, CoTiSb and NiTiSn (XM$_{x}$Y$_{1-x}$Z) in a wide concentration range using local-spin density functional method in the framework of tight-binding linearized muffin tin orbital method(TB-LMTO) and supercell approach. Our calculations indicate that some of these compounds are not only ferromagnetic but also half-metallic and may be useful for spintronics applications. The electronic structure of the doped systems is analyzed with the aid of a simple model where we have considered the interaction between the dopant transition metal (M) and the valence band X-Z hybrid. We have shown that the strong X-d - M-d interaction places the M-d states close to the Fermi level with the M-t$_{2g}$ states lying higher in energy in comparison to the M-e$_{g}$ states. Depending on the number of available d-electrons, ferromagnetism is realized provided the d-manifold is partially occupied. The tendencies toward ferromagnetic(FM) or antiferromagnetic(AFM) behavior are discussed within Anderson-Hasegawa models of super-exchange and double-exchange. In our calculations for Mn doped NiTiSn, the strong preference for FM over AFM ordering suggests a possible high Curie temperature for these systems.Comment: 14 pages, 6 figure

Intertwined Lattice Deformation and Magnetism in Monovacancy Graphene

Using density functional calculations we have investigated the local spin moment formation and lattice deformation in graphene when an isolated vacancy is created. We predict two competing equilibrium structures: a ground state planar configuration with a saturated local moment of 1.5 $\mu_B$, and a metastable non-planar configuration with a vanishing magnetic moment, at a modest energy expense of ~50 meV. Though non-planarity relieves the lattice of vacancy-induced strain, the planar state is energetically favored due to maximally localized defect states (v$\sigma$, v$\pi$). In the planar configuration, charge transfer from itinerant (Dirac) states weakens the spin-polarization of v$\pi$ yielding a fractional moment, which is aligned parallel to the unpaired v$\sigma$ electron through Hund's coupling. In the non-planar configuration, the absence of orthogonal symmetry allows interaction between v$\sigma$ and local d$\pi$ states, to form a hybridized v$\sigma^\prime$ state. The non-orthogonality also destabilizes the Hund's coupling, and an antiparallel alignment between v$\sigma$ and v$\pi$ lowers the energy. The gradual spin reversal of v$\pi$ with increasing non-planarity opens up the possibility of an intermediate structure with balanced v$\pi$ spin population. If such a structure is realized under external perturbations, diluted vacancy concentration may lead to v$\sigma$ based spin-1/2 paramagnetism.Comment: Published version - URL http://link.aps.org/doi/10.1103/PhysRevB.93.16540

Polar catastrophe, electron leakage, and magnetic ordering at the LaMnO3_3/SrMnO3_3 interface

Electronic reconstruction at the polar interface LaMnO$_3$/SrMnO$_3$ (LMO/SMO) (100) resulting from the polar catastrophe is studied from a model Hamiltonian that includes the double and super exchange interactions, the Madelung potential, and the Jahn-Teller coupling terms relevant for the manganites. We show that the polar catastrophe, originating from the alternately charged LMO layers and neutral SMO layers, is quenched by the accumulation of an extra half electron per cell in the interface region as in the case of the LaAlO$_3$/SrTiO$_3$ interface. In addition, the Mn e$_g$ electrons leak out from the LMO side to the SMO side, the extent of the leakage being controlled by the interfacial potential barrier and the substrate induced epitaxial strain. The leaked electrons mediate a Zener double exchange, making the layers adjacent to the interface ferromagnetic, while the two bulk materials away from the interface retain their original type A or G antiferromagnetic structures. A half-metallic conduction band results at the interface, sandwiched by the two insulating bulks. We have also studied how the electron leakage and consequently the magnetic ordering are affected by the substrate induced epitaxial strain. Comparisons are made with the results of the density-functional calculations for the (LMO)$_6$/(SMO)$_4$ superlattice.Comment: 8 pages, 13 figure