Sighting and trajectory analysis for periodic comets- 1975-1986

Sighting data and trajectory analysis for mission to periodic comet

Institutional and policy issues in the management of fisheries and coastal resources in Cambodia

Fishery management, Governments, Fishery policies, Resource conservation, Resource management, Cambodia,

A study of patent thickets

Report analysing whether entry of UK enterprises into patenting in a technology area is affected by patent thickets in the technology area

Prediction of Emerging Technologies Based on Analysis of the U.S. Patent Citation Network

The network of patents connected by citations is an evolving graph, which provides a representation of the innovation process. A patent citing another implies that the cited patent reflects a piece of previously existing knowledge that the citing patent builds upon. A methodology presented here (i) identifies actual clusters of patents: i.e. technological branches, and (ii) gives predictions about the temporal changes of the structure of the clusters. A predictor, called the {citation vector}, is defined for characterizing technological development to show how a patent cited by other patents belongs to various industrial fields. The clustering technique adopted is able to detect the new emerging recombinations, and predicts emerging new technology clusters. The predictive ability of our new method is illustrated on the example of USPTO subcategory 11, Agriculture, Food, Textiles. A cluster of patents is determined based on citation data up to 1991, which shows significant overlap of the class 442 formed at the beginning of 1997. These new tools of predictive analytics could support policy decision making processes in science and technology, and help formulate recommendations for action

International patent families: from application strategies to statistical indicators

This paper provides an in-depth analysis of the characteristics of international patent families, including their domestic component. We exploit a relatively under-studied feature of patent families, namely the number of patents covering the same invention within a given jurisdiction. Using this information, we highlight common patterns in the structure of international patent families, which reflect both the patenting strategies of innovators and the peculiarities of the different patent systems. While the literature has extensively used family size, i.e. the number of countries in which a given invention is protected, as a measure of patent value, our results suggest that the number of patent filings in the priority country within a patent family as well as the timespan between the first and last fillings within a family are other insightful indicators of the value of patented innovations

Comparative Assessment of Copper, Iron, and Zinc Contents in Selected Indian (Assam) and South African (Thohoyandou) Tea (Camellia sinensis L.) Samples and Their Infusion: A Quest for Health Risks to Consumer

The current study aims to assess the infusion pattern of three important micronutrients namely copper (Cu), iron (Fe), and zinc (Zn) contents from black tea samples produced in Assam (India) and Thohoyandou (South Africa). Average daily intakes and hazardous quotient were reported for these micronutrients. Total content for Cu, Fe, and Zn varied from 2.25 to 48.82 mg kg−1, 14.75 to 148.18 mg kg−1, and 28.48 to 106.68 mg kg−1, respectively. The average contents of each of the three micronutrients were higher in tea leaves samples collected from South Africa than those from India while the contents in tea infusions in Indian samples were higher than in South African tea samples. Results of this study revealed that the consumption of 600 mL tea infusion produced from 24 g of made tea per day may be beneficial to human in terms of these micronutrients content. Application of nonparametric tests revealed that most of the data sets do not satisfy the normality assumptions. Hence, the use of both parametric and nonparametric statistical analysis that subsequently revealed significant differences in elemental contents among Indian and South African tea

Electronic properties of Li-doped zigzag graphene nanoribbons

Zigzag graphene nanoribbons (ZGNRs) are known to exhibit metallic behavior. Depending on structural properties such as edge status, doping and width of nanoribbons, the electronic properties of these structures may vary. In this study, changes in electronic properties of crystal by doping Lithium (Li) atom to ZGNR structure are analyzed. In spin polarized calculations are made using Density Functional Theory (DFT) with generalized gradient approximation (GGA) as exchange correlation. As a result of calculations, it has been determined that Li atom affects electronic properties of ZGNR structure significantly. It is observed that ZGNR structure exhibiting metallic behavior in pure state shows half-metal and semiconductor behavior with Li atom. © 2016 Elsevier B.V

Electronic structure of β-Si3N4 crystals with substitutional icosagen group impurities

The β-Si3N4 crystals are widely used in industrial and electronics areas. Therefore, β-Si3N4 has drawn the attention of researchers for many years. In this study, effects of icosagen group impurity atoms in the IIIA group on the electronic properties of the β-Si3N4 crystal were analyzed by using the density functional theory. As a result of these analyses, it was determined that the electronic properties of the crystal change significantly. Basic electronic characteristics for pure β-Si3N4 crystal and icosagen group impurity β-Si3N4 crystals, such as band structures, densities of states, binding energies, and formation energies were investigated. We identified that the band gap of the β-Si3N4 crystal was affected significantly by the impurity, and this change was varying linearly in line with the formation energy for the impurity cases. As a result of calculations, the Al-impurity was found to be the lowest-energy impurity state

Effect of substitutional As impurity on electrical and optical properties of β-Si3N4 structure

β-Si3N4 is used as the gate dielectric for surface passivation in GaN-based, high-electron mobility transistors(HEMTs). In this study, the electrical and optical characteristics of the hexagonal β-Si3N4 crystal structure were calculated using density functional theory (DFT) and local-density approximation (LDA). Calculations of the electronic band structure and the density of states (DOS) were made for the pure β-Si3N4 crystal structure and the β-Si3N4 crystal doped with an arsenic (As) impurity atom. In addition, the optical properties such as the static dielectric constant, refractive index, extinction coefficient, absorption coefficient and reflection coefficient were examined depending on the photon energy. As a result of these calculations, it was observed that the As impurity atom drastically changed the electrical and optical properties of the pure β-Si3N4 crystalline structure, and improvements are suggested for potential further studies. © 2016 Elsevier Ltd. All rights reserved