Insight from the draft genome of Dietzia cinnamea P4 reveals mechanisms of survival in complex tropical soil habitats and biotechnology potential

The draft genome of Dietzia cinnamea strain P4 was determined using pyrosequencing. In total, 428 supercontigs were obtained and analyzed. We here describe and interpret the main features of the draft genome. The genome contained a total of 3,555,295 bp, arranged in a single replicon with an average G+C percentage of 70.9%. It revealed the presence of complete pathways for basically all central metabolic routes. Also present were complete sets of genes for the glyoxalate and reductive carboxylate cycles. Autotrophic growth was suggested to occur by the presence of genes for aerobic CO oxidation, formate/formaldehyde oxidation, the reverse tricarboxylic acid cycle and the 3-hydropropionate cycle for CO2 fixation. Secondary metabolism was evidenced by the presence of genes for the biosynthesis of terpene compounds, frenolicin, nanaomycin and avilamycin A antibiotics. Furthermore, a probable role in azinomycin B synthesis, an important product with antitumor activity, was indicated. The complete alk operon for the degradation of n-alkanes was found to be present, as were clusters of genes for biphenyl ring dihydroxylation. This study brings new insights in the genetics and physiology of D. cinnamea P4, which is useful in biotechnology and bioremediation

L-type and T-type Ca2+ current in cultured ventricular guinea pig myocytes.

The aim of this investigation was to study L-type and T-type Ca2+ current (ICaL and ICaT) in short-term cultured adult guinea pig ventricular myocytes. The isolated myocytes were suspended in serum-supplemented medium up to 5 days. Using whole-cell patch clamp techniques ICaL and ICaT were studied by applying voltage protocols from different holding potentials (–40 and –90 mV). After 5 days in culture the myocytes still showed their typical rod shaped morphology but a decline in cell membrane capacitance (26 %). The peak density of ICaT was reduced significantly between day 0 (–1.60.37 pA/pF, n=9) and day 5 (–0.40.13 pA/pF, n=11), whereas peak ICaL density revealed no significant differences during culturing. The ICaT/ICaL ratio dropped from 0.13 at day 0 to 0.05 at day 5. Compared with day 0 ICaL the steady state inactivation curve of day 1, day 3 and day 5 myocytes was slightly shifted to more negative potentials. Our data indicate that guinea pig ventricular L-type and T-type Ca2+ channels are differently regulated in culture.</jats:p

Ion Scattering Studies of Defects In Gan Thin Films on C-Oriented Sapphire

ABSTRACTEpitaxial GaN films grown by metal organic vapour phase epitaxy (MOVPE) or gas source molecular beam epitaxy (GSMBE) have opened up new applications in short wavelength photonic devices as well as high-power and high-temperature devices. The large lattice mismatch of 14% between GaN and sapphire, which is frequently used as the substrate, and the different thermal expansion coefficients generally lead to high densities of structural defects. We investigate the defect structure of MOVPE- and GSMBE-grown GaN layers on sapphire by Rutherford backscattering and ion channeling measurements. Channeling along the c-axis revealed χmin-values as low as 1.2% even in samples with dislocation densities in the order of 109 cm−2. Channeling measurements along different crystal planes were performed in order to improve the sensitivity to dechanneling by crystalline defects. Angular yield scans around the c-axis indicate clearly the hexagonal symmetry of the GaN lattice. Dechanneling results were combined with transmission electron microscopy investigations (TEM). The results suggest that the dechanneling-cross-section of edge dislocations is about 4 times larger than the dechannelingcross-section of screw dislocations. screw dislocations.</jats:p

Determination of the dislocation densities in GaN on c-oriented sapphire

We report on a comprehensive study of the defect structure in GaN grown on c-oriented sapphire by gas source molecular beam epitaxy and metal organic vapour phase epitaxy. Transmission electron microscopy is used to investigate the defect structures which are dominated by threading dislocations perpendicular to the sapphire surface and stacking faults. Additionally, dislocation densities are determined. For determination of dislocation densities by x-ray diffraction we employ a model that uses the linewidth of x-ray rocking curves for this purpose. Finally, Rutherford backscattering spectrometry is performed to complement the structural investigation.</jats:p