Electric field and photo-excited control of the carrier concentration in GdN

We present both electric-field and photo-excited control of the carrier concentration in GdN. There is no evidence in the results of a carrier-mediated contribution to the Gd-Gd exchange interaction that has been suggested to explain a measured Curie temperature that is much higher than obtained within theoretical treatments. Persistent carrier concentrations seen in both the field-effect and photo-induced conductivities point to a distribution of long-lived trap states below the conduction band, very likely centred at nitrogen vacancie

Winter storm risk of residential structures ? model development and application to the German state of Baden-Württemberg

International audienceThe derivation of probabilities of high wind speeds and the establishment of risk curves for storm damage is of prime importance in natural hazard risk analysis. Risk curves allow the assessment of damage being exceeded at a given level of probability. In this paper, a method for the assessment of winter storm damage risk is described in detail and applied to the German state of Baden-Württemberg. Based on meteorological observations of the years 1971?2000 and on damage information of 4 severe storm events, storm hazard and damage risk of residential buildings is calculated on the level of communities. For this purpose, highly resolved simulations of storm wind fields with the Karlsruher Atmospheric Mesoscale Model (KAMM) are performed and a storm damage model is developed. Risk curves including the quantification of the uncertainties are calculated for every community. Local differences of hazard and risk are presented in state-wide maps. An average annual winter storm damage to residential buildings of minimum 15 million Euro (reference year 2000) for Baden-Württemberg is expected

Applications of a High-Altitude Powered Platform (HAPP)

A list of potential uses for the (HAPP) and conceptual system designs for a small subset of the most promising applications were investigated. The method was to postulate a scenario for each application specifying a user, a set of system requirements and the most likely competitor among conventional aircraft and satellite systems. As part of the study of remote sensing applications, a parametric cost comparison was done between aircraft and HAPPS. For most remote sensing applications, aircraft can supply the same data as HAPPs at substantially lower cost. The critical parameters in determining the relative costs of the two systems are the sensor field of view and the required frequency of the observations being made. The HAPP is only competitive with an airplane when sensors having a very wide field of view are appropriate and when the phenomenon being observed must be viewed at least once per day. This eliminates the majority of remote sensing applications from any further consideration

Quantitative study of molecular N_2 trapped in disordered GaN:O films

The structure of disordered GaN:O films grown by ion-assisted deposition is investigated using x-ray absorption near-edge spectroscopy and Raman spectroscopy. It is found that between 4 and 21 % of the nitrogen in the films is in the form of molecular N_2 that interacts only weakly with the surrounding matrix. The anion to cation ratio in the GaN:O host remains close to unity, and there is a close correlation between the N_2 fraction, the level of oxygen impurities, and the absence of short-range order in the GaN:O matrix.Comment: 5 pages, 3 figure

Highly resistive epitaxial Mg-doped GdN thin films

We report the growth by molecular beam epitaxy of highly resistive GdN, using intentional doping with magnesium. Mg-doped GdN layers with resistivities of 1000 {\Omega}.cm and carrier concentrations of 10E16 cm-3 are obtained for films with Mg concentrations up to 5 x 10E19 atoms/cm3. X-ray diffraction rocking curves indicate that Mg-doped GdN films have crystalline quality very similar to undoped GdN films, showing that the Mg doping did not affect the structural properties of the films. A decrease of the Curie temperature with decreasing the electron density is observed, supporting a recently suggested magnetic polaron scenario [F. Natali et al., Phys. Rev. B 87, 035202 (2013)]

Spin/orbit moment imbalance in the near-zero moment ferromagnetic semiconductor SmN

SmN is ferromagnetic below 27 K, and its net magnetic moment of 0.03 Bohr magnetons per formula unit is one of the smallest magnetisations found in any ferromagnetic material. The near-zero moment is a result of the nearly equal and opposing spin and orbital moments in the 6H5/2 ground state of the Sm3+ ion, which leads finally to a nearly complete cancellation for an ion in the SmN ferromagnetic state. Here we explore the spin alignment in this compound with X-ray magnetic circular dichroism at the Sm L2,3 edges. The spectral shapes are in qualitative agreement with computed spectra based on an LSDA+U (local spin density approximation with Hubbard-U corrections) band structure, though there remain differences in detail which we associate with the anomalous branching ratio in rare-earth L edges. The sign of the spectra determine that in a magnetic field the Sm 4f spin moment aligns antiparallel to the field; the very small residual moment in ferromagnetic SmN aligns with the 4f orbital moment and antiparallel to the spin moment. Further measurements on very thin (1.5 nm) SmN layers embedded in GdN show the opposite alignment due to a strong Gd-Sm exchange, suggesting that the SmN moment might be further reduced by about 0.5 % Gd substitution

Europium nitride: A novel diluted magnetic semiconductor

Europium nitride is semiconducting and contains non-magnetic \3+, but sub-stoichiometric EuN has Eu in a mix of 2+ and 3+ charge states. We show that at \2+ ~concentrations near 15-20% EuN is ferromagnetic with a Curie temperature as high as 120 K. The \3+ ~polarization follows that of the \2+, confirming that the ferromagnetism is intrinsic to the EuN which is thus a novel diluted magnetic semiconductor. Transport measurements shed light on the likely exchange mechanisms.Comment: 5 page