1,098 research outputs found

    Surface code architecture for donors and dots in silicon with imprecise and nonuniform qubit couplings

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    A scaled quantum computer with donor spins in silicon would benefit from a viable semiconductor framework and a strong inherent decoupling of the qubits from the noisy environment. Coupling neighbouring spins via the natural exchange interaction according to current designs requires gate control structures with extremely small length scales. We present a silicon architecture where bismuth donors with long coherence times are coupled to electrons that can shuttle between adjacent quantum dots, thus relaxing the pitch requirements and allowing space between donors for classical control devices. An adiabatic SWAP operation within each donor/dot pair solves the scalability issues intrinsic to exchange-based two-qubit gates, as it does not rely on sub-nanometer precision in donor placement and is robust against noise in the control fields. We use this SWAP together with well established global microwave Rabi pulses and parallel electron shuttling to construct a surface code that needs minimal, feasible local control.Comment: Published version - more detailed discussions, robustness to dephasing pointed out additionall

    Spin Coherence and 14^{14}N ESEEM Effects of Nitrogen-Vacancy Centers in Diamond with X-band Pulsed ESR

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    Pulsed ESR experiments are reported for ensembles of negatively-charged nitrogen-vacancy centers (NV^-) in diamonds at X-band magnetic fields (280-400 mT) and low temperatures (2-70 K). The NV^- centers in synthetic type IIb diamonds (nitrogen impurity concentration <1<1~ppm) are prepared with bulk concentrations of 210132\cdot 10^{13} cm3^{-3} to 410144\cdot 10^{14} cm3^{-3} by high-energy electron irradiation and subsequent annealing. We find that a proper post-radiation anneal (1000^\circC for 60 mins) is critically important to repair the radiation damage and to recover long electron spin coherence times for NV^-s. After the annealing, spin coherence times of T2=0.74_2 = 0.74~ms at 5~K are achieved, being only limited by 13^{13}C nuclear spectral diffusion in natural abundance diamonds. At X-band magnetic fields, strong electron spin echo envelope modulation (ESEEM) is observed originating from the central 14^{14}N nucleus. The ESEEM spectral analysis allows for accurate determination of the 14^{14}N nuclear hypefine and quadrupole tensors. In addition, the ESEEM effects from two proximal 13^{13}C sites (second-nearest neighbor and fourth-nearest neighbor) are resolved and the respective 13^{13}C hyperfine coupling constants are extracted.Comment: 10 pages, 5 figure

    Electrical activation and electron spin coherence of ultra low dose antimony implants in silicon

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    We implanted ultra low doses (2x10^11 cm-2) of 121Sb ions into isotopically enriched 28Si and find high degrees of electrical activation and low levels of dopant diffusion after rapid thermal annealing. Pulsed Electron Spin Resonance shows that spin echo decay is sensitive to the dopant depths, and the interface quality. At 5.2 K, a spin decoherence time, T2, of 0.3 ms is found for profiles peaking 50 nm below a Si/SiO2 interface, increasing to 0.75 ms when the surface is passivated with hydrogen. These measurements provide benchmark data for the development of devices in which quantum information is encoded in donor electron spins

    Quantum non-demolition measurements of single donor spins in semiconductors

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    We propose a technique for measuring the state of a single donor electron spin using a field-effect transistor induced two-dimensional electron gas and electrically detected magnetic resonance techniques. The scheme is facilitated by hyperfine coupling to the donor nucleus. We analyze the potential sensitivity and outline experimental requirements. Our measurement provides a single-shot, projective, and quantum non-demolition measurement of an electron-encoded qubit state.Comment: 8+ pages. 4 figures. Published versio

    Irradiation of Materials with Short, Intense Ion pulses at NDCX-II

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    We present an overview of the performance of the Neutralized Drift Compression Experiment-II (NDCX-II) accelerator at Berkeley Lab, and report on recent target experiments on beam driven melting and transmission ion energy loss measurements with nanosecond and millimeter-scale ion beam pulses and thin tin foils. Bunches with around 10^11 ions, 1-mm radius, and 2-30 ns FWHM duration have been created with corresponding fluences in the range of 0.1 to 0.7 J/cm^2. To achieve these short pulse durations and mm-scale focal spot radii, the 1.1 MeV He+ ion beam is neutralized in a drift compression section, which removes the space charge defocusing effect during final compression and focusing. The beam space charge and drift compression techniques resemble necessary beam conditions and manipulations in heavy ion inertial fusion accelerators. Quantitative comparison of detailed particle-in-cell simulations with the experiment play an important role in optimizing accelerator performance.Comment: 15 pages, 7 figures. revised manuscript submitted to Laser and Particle Beam

    Reaching the quantum limit of sensitivity in electron spin resonance

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    We report pulsed electron-spin resonance (ESR) measurements on an ensemble of Bismuth donors in Silicon cooled at 10mK in a dilution refrigerator. Using a Josephson parametric microwave amplifier combined with high-quality factor superconducting micro-resonators cooled at millikelvin temperatures, we improve the state-of-the-art sensitivity of inductive ESR detection by nearly 4 orders of magnitude. We demonstrate the detection of 1700 bismuth donor spins in silicon within a single Hahn echo with unit signal-to-noise (SNR) ratio, reduced to just 150 spins by averaging a single Carr-Purcell-Meiboom-Gill sequence. This unprecedented sensitivity reaches the limit set by quantum fluctuations of the electromagnetic field instead of thermal or technical noise, which constitutes a novel regime for magnetic resonance.Comment: Main text : 10 pages, 4 figures. Supplementary text : 16 pages, 8 figure

    Asymptotic expansion for reversible A + B <-> C reaction-diffusion process

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    We study long-time properties of reversible reaction-diffusion systems of type A + B C by means of perturbation expansion in powers of 1/t (inverse of time). For the case of equal diffusion coefficients we present exact formulas for the asymptotic forms of reactant concentrations and a complete, recursive expression for an arbitrary term of the expansions. Taking an appropriate limit we show that by studying reversible reactions one can obtain "singular" solutions typical of irreversible reactions.Comment: 6 pages, no figures, to appear in PR

    Silicon-based spin and charge quantum computation

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    Silicon-based quantum-computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing Si technology infrastructure. Electronic and nuclear spins of shallow donors (e.g. phosphorus) in Si are ideal candidates for qubits in such proposals due to the relatively long spin coherence times. For these spin qubits, donor electron charge manipulation by external gates is a key ingredient for control and read-out of single-qubit operations, while shallow donor exchange gates are frequently invoked to perform two-qubit operations. More recently, charge qubits based on tunnel coupling in P2+_2^+ substitutional molecular ions in Si have also been proposed. We discuss the feasibility of the building blocks involved in shallow donor quantum computation in silicon, taking into account the peculiarities of silicon electronic structure, in particular the six degenerate states at the conduction band edge. We show that quantum interference among these states does not significantly affect operations involving a single donor, but leads to fast oscillations in electron exchange coupling and on tunnel-coupling strength when the donor pair relative position is changed on a lattice-parameter scale. These studies illustrate the considerable potential as well as the tremendous challenges posed by donor spin and charge as candidates for qubits in silicon.Comment: Review paper (invited) - to appear in Annals of the Brazilian Academy of Science
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