1,098 research outputs found
Surface code architecture for donors and dots in silicon with imprecise and nonuniform qubit couplings
A scaled quantum computer with donor spins in silicon would benefit from a
viable semiconductor framework and a strong inherent decoupling of the qubits
from the noisy environment. Coupling neighbouring spins via the natural
exchange interaction according to current designs requires gate control
structures with extremely small length scales. We present a silicon
architecture where bismuth donors with long coherence times are coupled to
electrons that can shuttle between adjacent quantum dots, thus relaxing the
pitch requirements and allowing space between donors for classical control
devices. An adiabatic SWAP operation within each donor/dot pair solves the
scalability issues intrinsic to exchange-based two-qubit gates, as it does not
rely on sub-nanometer precision in donor placement and is robust against noise
in the control fields. We use this SWAP together with well established global
microwave Rabi pulses and parallel electron shuttling to construct a surface
code that needs minimal, feasible local control.Comment: Published version - more detailed discussions, robustness to
dephasing pointed out additionall
Spin Coherence and N ESEEM Effects of Nitrogen-Vacancy Centers in Diamond with X-band Pulsed ESR
Pulsed ESR experiments are reported for ensembles of negatively-charged
nitrogen-vacancy centers (NV) in diamonds at X-band magnetic fields
(280-400 mT) and low temperatures (2-70 K). The NV centers in synthetic
type IIb diamonds (nitrogen impurity concentration ~ppm) are prepared with
bulk concentrations of cm to cm
by high-energy electron irradiation and subsequent annealing. We find that a
proper post-radiation anneal (1000C for 60 mins) is critically
important to repair the radiation damage and to recover long electron spin
coherence times for NVs. After the annealing, spin coherence times of T~ms at 5~K are achieved, being only limited by C nuclear spectral
diffusion in natural abundance diamonds. At X-band magnetic fields, strong
electron spin echo envelope modulation (ESEEM) is observed originating from the
central N nucleus. The ESEEM spectral analysis allows for accurate
determination of the N nuclear hypefine and quadrupole tensors. In
addition, the ESEEM effects from two proximal C sites (second-nearest
neighbor and fourth-nearest neighbor) are resolved and the respective C
hyperfine coupling constants are extracted.Comment: 10 pages, 5 figure
Electrical activation and electron spin coherence of ultra low dose antimony implants in silicon
We implanted ultra low doses (2x10^11 cm-2) of 121Sb ions into isotopically
enriched 28Si and find high degrees of electrical activation and low levels of
dopant diffusion after rapid thermal annealing. Pulsed Electron Spin Resonance
shows that spin echo decay is sensitive to the dopant depths, and the interface
quality. At 5.2 K, a spin decoherence time, T2, of 0.3 ms is found for profiles
peaking 50 nm below a Si/SiO2 interface, increasing to 0.75 ms when the surface
is passivated with hydrogen. These measurements provide benchmark data for the
development of devices in which quantum information is encoded in donor
electron spins
Quantum non-demolition measurements of single donor spins in semiconductors
We propose a technique for measuring the state of a single donor electron
spin using a field-effect transistor induced two-dimensional electron gas and
electrically detected magnetic resonance techniques. The scheme is facilitated
by hyperfine coupling to the donor nucleus. We analyze the potential
sensitivity and outline experimental requirements. Our measurement provides a
single-shot, projective, and quantum non-demolition measurement of an
electron-encoded qubit state.Comment: 8+ pages. 4 figures. Published versio
Irradiation of Materials with Short, Intense Ion pulses at NDCX-II
We present an overview of the performance of the Neutralized Drift
Compression Experiment-II (NDCX-II) accelerator at Berkeley Lab, and report on
recent target experiments on beam driven melting and transmission ion energy
loss measurements with nanosecond and millimeter-scale ion beam pulses and thin
tin foils. Bunches with around 10^11 ions, 1-mm radius, and 2-30 ns FWHM
duration have been created with corresponding fluences in the range of 0.1 to
0.7 J/cm^2. To achieve these short pulse durations and mm-scale focal spot
radii, the 1.1 MeV He+ ion beam is neutralized in a drift compression section,
which removes the space charge defocusing effect during final compression and
focusing. The beam space charge and drift compression techniques resemble
necessary beam conditions and manipulations in heavy ion inertial fusion
accelerators. Quantitative comparison of detailed particle-in-cell simulations
with the experiment play an important role in optimizing accelerator
performance.Comment: 15 pages, 7 figures. revised manuscript submitted to Laser and
Particle Beam
Reaching the quantum limit of sensitivity in electron spin resonance
We report pulsed electron-spin resonance (ESR) measurements on an ensemble of
Bismuth donors in Silicon cooled at 10mK in a dilution refrigerator. Using a
Josephson parametric microwave amplifier combined with high-quality factor
superconducting micro-resonators cooled at millikelvin temperatures, we improve
the state-of-the-art sensitivity of inductive ESR detection by nearly 4 orders
of magnitude. We demonstrate the detection of 1700 bismuth donor spins in
silicon within a single Hahn echo with unit signal-to-noise (SNR) ratio,
reduced to just 150 spins by averaging a single Carr-Purcell-Meiboom-Gill
sequence. This unprecedented sensitivity reaches the limit set by quantum
fluctuations of the electromagnetic field instead of thermal or technical
noise, which constitutes a novel regime for magnetic resonance.Comment: Main text : 10 pages, 4 figures. Supplementary text : 16 pages, 8
figure
Asymptotic expansion for reversible A + B <-> C reaction-diffusion process
We study long-time properties of reversible reaction-diffusion systems of
type A + B C by means of perturbation expansion in powers of 1/t (inverse
of time). For the case of equal diffusion coefficients we present exact
formulas for the asymptotic forms of reactant concentrations and a complete,
recursive expression for an arbitrary term of the expansions. Taking an
appropriate limit we show that by studying reversible reactions one can obtain
"singular" solutions typical of irreversible reactions.Comment: 6 pages, no figures, to appear in PR
Silicon-based spin and charge quantum computation
Silicon-based quantum-computer architectures have attracted attention because
of their promise for scalability and their potential for synergetically
utilizing the available resources associated with the existing Si technology
infrastructure. Electronic and nuclear spins of shallow donors (e.g.
phosphorus) in Si are ideal candidates for qubits in such proposals due to the
relatively long spin coherence times. For these spin qubits, donor electron
charge manipulation by external gates is a key ingredient for control and
read-out of single-qubit operations, while shallow donor exchange gates are
frequently invoked to perform two-qubit operations. More recently, charge
qubits based on tunnel coupling in P substitutional molecular ions in Si
have also been proposed. We discuss the feasibility of the building blocks
involved in shallow donor quantum computation in silicon, taking into account
the peculiarities of silicon electronic structure, in particular the six
degenerate states at the conduction band edge. We show that quantum
interference among these states does not significantly affect operations
involving a single donor, but leads to fast oscillations in electron exchange
coupling and on tunnel-coupling strength when the donor pair relative position
is changed on a lattice-parameter scale. These studies illustrate the
considerable potential as well as the tremendous challenges posed by donor spin
and charge as candidates for qubits in silicon.Comment: Review paper (invited) - to appear in Annals of the Brazilian Academy
of Science
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