Competition between magnetic field dependent band structure and coherent backscattering in multiwall carbon nanotubes

Magnetotransport measurements in large diameter multiwall carbon nanotubes (20-40 nm) demonstrate the competition of a magnetic-field dependent bandstructure and Altshuler-Aronov-Spivak oscillations. By means of an efficient capacitive coupling to a backgate electrode, the magnetoconductance oscillations are explored as a function of Fermi level shift. Changing the magnetic field orientation with respect to the tube axis and by ensemble averaging, allows to identify the contributions of different Aharonov-Bohm phases. The results are in qualitative agreement with numerical calculations of the band structure and the conductance.Comment: 4 figures, 5 page

Electron orbital valves made of multiply connected armchair carbon nanotubes with mirror-reflection symmetry: tight-binding study

Using the tight-binding method and the Landauer-B\"{u}ttiker conductance formalism, we demonstrate that a multiply connected armchair carbon nanotube with a mirror-reflection symmetry can sustain an electron current of the $\pi$-bonding orbital while suppress that of the $\pi$-antibonding orbital over a certain energy range. Accordingly, the system behaves like an electron orbital valve and may be used as a scanning tunneling microscope to probe pairing symmetry in d-wave superconductors or even orbital ordering in solids which is believed to occur in some transition-metal oxides.Comment: 4 figures, 12 page

Quantum interference in multiwall carbon nanotubes

Abstract. Recent low temperature conductance measurements on multiwall carbon nanotubes in perpendicular and parallel magnetic fields are reported. An efficient gating technique allows for considerable tuning of the nanotube doping level. This enables us to study extensively the effect of the nanotube bandstructure on electron quantum interference effects such as weak localization, universal conductance fluctuations and the Aharonov�Bohm effect. We show that the magnetoresistance in the perpendicular magnetic field is strongly suppressed at certain gate voltages Ugate which can be linked with the bottoms of one-dimensional electronic subbands. This assignment allows a detailed comparison of theoretical calculations with the experimental data. In agreement with the theory, a pronounced energy dependence of the elastic mean free path with a strong enhancement close to the charge neutrality point is observed. In the large parallel magnetic field, we observe a superposition of h/2e-periodic Altshuler�Aronov�Spivak oscillations and an additional h/e-periodic contribution to the conductivity. The latter contribution shows a diamond-like pattern in the B - Ugate-plane, which reflects the magnetic field dependence of the density of states of the nanotube's outermost shell

Phonons in SiC from INS, IXS, and Ab-Initio Calculations

Preliminary results for the phonon dispersion curves of hexagonal 4H-SiC from experimental inelastic neutron (INS) and X-ray scattering (IXS) are reported and contrasted with those of cubic 3C-SiC and silicon. The experimental frequencies and scattering intensities are in excellent agreement with those from first-principles calculations using density-functional methods. The relative merits of the two experimental techniques and aspects of the density functional perturbation theory and the so-called frozen phonon method for the determination of the basic phonon properties are briefly outlined

Determination of the phonon dispersion of zinc blende (3C) silicon carbide by inelastic x-ray scattering

We present an experimental and theoretical investigation of the phonon dispersion relations in zinc blende (3C) SiC. The experimental data were obtained for the entire Brillouin zone by inelastic x-ray scattering (IXS) using a synchrotron radiation source. Eigenvector analysis is performed with the aid of state-of-the-art linear response first principles calculations based on density functional theory. The theoretical predictions reproduce the experimental phonon dispersion remarkably well. These results are compared with data obtained previously for the 〈111〉 direction by Raman spectroscopy using several SiC polytypes and the backfolding technique. IXS data for modification along the c axis are also reported.MECDMax Planck Gesellschaf

Ensemble averaging of conductance fluctuations in multiwall carbon nanotubes

Abstract. We report resistance measurements for a single multiwall carbon nanotube as a function of gate voltage and perpendicular magnetic field. The tubes were trapped onto pre-patterned Al electrodes by means of an ac electric field. Magnetoresistance traces measured for various values of the gate voltage were averaged, which corresponds to an ensemble averaging of conductance fluctuations induced by quantum interference. The ensemble averaging decreases the conductance fluctuations, while leaving the weak localization contribution to the resistance unchanged. Our data can be consistently interpreted in terms quantum transport in the presence of a weak disorder

Four Current Examples of Characterization of Silicon Carbide

A description is given of the profiling of CVD grown 3C SiC on undulant (001) Si using low temperature photoluminescence (LTPL). Inelastic neutron scattering (INS) and X-ray Raman scattering (XRS) are compared for acoustical modes of 4H SiC. Schottky barrier heights are obtained for 4H and 6H SiC on different crystal faces using three different measuring techniques. Scanning electron microscopy (SEM) is used to display a variety of porous SiC morphologies achieved in n-type and p-type SiC. This paper is intended to be the introduction to the “CHARACTERIZATION” section of this volume. To serve this purpose we illustrate the subject matter with new results using four distinct experimental techniques

Determination of the phonon dispersion of zinc blende (3C) silicon carbide by inelastic x-ray scattering

We present an experimental and theoretical investigation of the phonon dispersion relations in zinc blende (3C) SiC. The experimental data were obtained for the entire Brillouin zone by inelastic x-ray scattering (IXS) using a synchrotron radiation source. Eigenvector analysis is performed with the aid of state-of-the-art linear response first principles calculations based on density functional theory. The theoretical predictions reproduce the experimental phonon dispersion remarkably well. These results are compared with data obtained previously for the direction by Raman spectroscopy using several SiC polytypes and the backfolding technique. IXS data for 4H modification along the c axis are also reported. (C) 2002 American Institute of Physics