Security Implications of Fog Computing on the Internet of Things

Recently, the use of IoT devices and sensors has been rapidly increased which also caused data generation (information and logs), bandwidth usage, and related phenomena to be increased. To our best knowledge, a standard definition for the integration of fog computing with IoT is emerging now. This integration will bring many opportunities for the researchers, especially while building cyber-security related solutions. In this study, we surveyed about the integration of fog computing with IoT and its implications. Our goal was to find out and emphasize problems, specifically security related problems that arise with the employment of fog computing by IoT. According to our findings, although this integration seems to be non-trivial and complicated, it has more benefits than the implications.Comment: 5 pages, conference paper, to appear in Proceedings of the ICCE 2019, IEEE 37th International Conference on Consumer Electronics (ICCE), Jan 11- 13, 2019, Las Vegas, NV, US

Lithography-Free, Manganese-Based Ultra-Broadband Absorption Through Annealing-Based Deformation of Thin Layers into metal-air composites

Fabrication, characterization, and analysis of an ultra-broadband lithography-free absorber is presented. An over 94% average absorption is experimentally achieved in the wavelength range of 450-1400 nm. This ultra-broadband absorption is obtained by a simple annealed tri-layer metal-insulator-metal (MIM) configuration. The metal used in the structure is Manganese (Mn), which also makes the structure cost-effective. It is shown that the structure retains its high absorption for TM polarization, up to 70 degrees, and, for TE polarization, up to 50 degrees. Moreover, the physical mechanism behind this broadband absorption is explained. Being both lithography-free and cost-effective, the structure is a perfect candidate for large-area and mass production purposes.Comment: 8 pages, 3 figure

Solar-blind AlxGa1-xN-based avalanche photodiodes

Cataloged from PDF version of article.We report the Metalorganic Chemical Vapor Deposition (MOCVD) growth, fabrication, and characterization of solar blind AlxGa1-xN/GaN-based avalanche photodiodes. The photocurrent voltage characteristics indicate a reproducible avalanche gain higher than 25 at a 72 V applied reverse bias. Under a 25 V reverse bias voltage, the 100 mu m diameter devices had a maximum quantum efficiency of 55% and a peak responsivity of 0.11 A/W at 254 nm, and a NEP of 1.89x10(-16) W/Hz(1/2). (c) 2005 American Institute of Physics

Nanoantenna coupled UV subwavelength photodtectors based on GaN

Cataloged from PDF version of article.The integration of nano structures with opto-electronic devices has many potential applications. It allows the coupling of more light into or out of the device while decreasing the size of the device itself. Such devices are reported in the VIS and NIR regions. However, making plasmonic structures for the UV region is still a challenge. Here, we report on a UV nano-antenna integrated metal semiconductor metal (MSM) photodetector based on GaN. We designed and fabricated Al grating structures. Well defined plasmonic resonances were measured in the reflectance spectra. Optimized grating structure integrated photodetectors exhibited more than sevenfold photocurrent enhancement. Finite difference time domain simulations revealed that both geometrical and plasmonic effects played role in photocurrent enhancement. (C) 2012 Optical Society of Americ

Electron beam lithography designed silver nano-disks used as label free nano-biosensors based on localized surface plasmon resonance

Cataloged from PDF version of article.We present a label-free, optical nano-biosensor based on the Localized Surface Plasmon Resonance (LSPR) that is observed at the metaldielectric interface of silver nano-disk arrays located periodically on a sapphire substrate by Electron-Beam Lithography (EBL). The nano-disk array was designed by finite-difference and time-domain (FDTD) algorithm-based simulations. Refractive index sensitivity was calculated experimentally as 221-354 nm/RIU for different sized arrays. The sensing mechanism was first tested with a biotin-avidin pair, and then a preliminary trial for sensing heat-killed Escherichia coli (E. coli) O157:H7 bacteria was done. Although the study is at an early stage, the results indicate that such a plasmonic structure can be applied to bio-sensing applications and then extended to the detection of specific bacteria species as a fast and low cost alternative. © 2012 Optical Society of America

Leakage current by Frenkel-Poole emission in Ni/Au Schottky contacts on Al0.83In0.17N/AlN/GaN heterostructures

Cataloged from PDF version of article.In order to determine the reverse-bias leakage current mechanisms in Schottky diodes on Al0.83In0.17N/AlN/GaN heterostructures, the temperature-dependent current-voltage measurements were performed in the temperature range of 250-375 K. In this temperature range, the leakage current was found to be in agreement with the predicted characteristics, which is based on the Frenkel-Poole emission model. The analysis of the reverse current-voltage characteristics dictates that the main process in leakage current flow is the emission of electrons from a trapped state near the metal-semiconductor interface into a continuum of states which associated with each conductive dislocation

LSPR enhanced MSM UV photodetectors

Cataloged from PDF version of article.We fabricated localized surface plasmon resonance enhanced UV photodetectors on MOCVD grown semi-insulating GaN. Plasmonic resonance in the UV region was attained using 36nm diameter Al nanoparticles. Extinction spectra of the nanoparticles were measured through spectral transmission measurements. A resonant extinction peak around 300nm was obtained with Al nanoparticles. These particles gave rise to enhanced absorption in GaN at 340nm. Spectral responsivity measurements revealed an enhancement factor of 1.5. These results provided experimental verification for obtaining field enhancement by using Al nanoparticles on GaN. © 2012 IOP Publishing Ltd

High-performance visible-blind GaN-based p-I-n photodetectors

Cataloged from PDF version of article.We report high performance visible-blind GaN-based p-i-n photodetectors grown by metal-organic chemical vapor deposition on c-plane sapphire substrates. The dark current of the 200 mu m diameter devices was measured to be lower than 20 pA for bias voltages up to 5 V. The breakdown voltages were higher than 120 V. The responsivity of the photodetectors was similar to 0.23 A/W at 356 nm under 5 V bias. The ultraviolet-visible rejection ratio was 6.7x10(3) for wavelengths longer than 400 nm. (C) 2008 American Institute of Physics

Integrated AlGaN quadruple-band ultraviolet photodetectors

Cataloged from PDF version of article.Monolithically integrated quadruple back-illuminated ultraviolet metalsemiconductormetal photodetectors with four different spectral responsivity bands were demonstrated on each of two different Al xGa 1-xN heterostructures. The average of the full-width at half-maximum (FWHM) of the quantum efficiency peaks was 18.15nm for sample A, which incorporated five 1000nm thick epitaxial layers. In comparison, the average FWHM for sample B was 9.98 nm, which incorporated nine 500nm thick epitaxial layers. © 2012 IOP Publishing Ltd

How Image Degradations Affect Deep CNN-based Face Recognition?

Face recognition approaches that are based on deep convolutional neural networks (CNN) have been dominating the field. The performance improvements they have provided in the so called in-the-wild datasets are significant, however, their performance under image quality degradations have not been assessed, yet. This is particularly important, since in real-world face recognition applications, images may contain various kinds of degradations due to motion blur, noise, compression artifacts, color distortions, and occlusion. In this work, we have addressed this problem and analyzed the influence of these image degradations on the performance of deep CNN-based face recognition approaches using the standard LFW closed-set identification protocol. We have evaluated three popular deep CNN models, namely, the AlexNet, VGG-Face, and GoogLeNet. Results have indicated that blur, noise, and occlusion cause a significant decrease in performance, while deep CNN models are found to be robust to distortions, such as color distortions and change in color balance.Comment: 8 pages, 3 figure