Computational Mechanism Design: A Call to Arms

Game theory has developed powerful tools for analyzing decision making in systems with multiple autonomous actors. These tools, when tailored to computational settings, provide a foundation for building multiagent software systems. This tailoring gives rise to the field of computational mechanism design, which applies economic principles to computer systems design

Effect of simultaneous application of field and pressure on magnetic transitions in La0.5{_{0.5}}Ca0.5{_{0.5}}MnO3{_{3}}

We study combined effect of hydrostatic pressure and magnetic field on the magnetization of La${_{0.5}}$Ca${_{0.5}}$MnO${_{3}}$. We do not observe any significant effect of pressure on the paramagnetic to ferromagnetic transition. However, pressure asymmetrically affects the thermal hysteresis across the ferro-antiferromagnetic first-order transition, which has strong field dependence. Though the supercooling (T*) and superheating (T**) temperatures decrease and the value of magnetization at 5K (M$_{5K}$) increases with pressure, T* and M$_{5K}$ shows abrupt changes in tiny pressure of 0.68kbar. These anomalies enhance with field. In 7Tesla field, transition to antiferromagnetic phase disappears in 0.68kbar and M$_{5K}$ show significant increase. Thereafter, increase in pressure up to $\sim$10kbar has no noticeable effect on the magnetization

Spin precession and inverted Hanle effect in a semiconductor near a finite-roughness ferromagnetic interface

Although the creation of spin polarization in various non-magnetic media via electrical spin injection from a ferromagnetic tunnel contact has been demonstrated, much of the basic behavior is heavily debated. It is reported here for semiconductor/Al2O3/ferromagnet tunnel structures based on Si or GaAs that local magnetostatic fields arising from interface roughness dramatically alter and even dominate the accumulation and dynamics of spins in the semiconductor. Spin precession in the inhomogeneous magnetic fields is shown to reduce the spin accumulation up to tenfold, and causes it to be inhomogeneous and non-collinear with the injector magnetization. The inverted Hanle effect serves as experimental signature. This interaction needs to be taken into account in the analysis of experimental data, particularly in extracting the spin lifetime and its variation with different parameters (temperature, doping concentration). It produces a broadening of the standard Hanle curve and thereby an apparent reduction of the spin lifetime. For heavily doped n-type Si at room temperature it is shown that the spin lifetime is larger than previously determined, and a new lower bound of 0.29 ns is obtained. The results are expected to be general and occur for spins near a magnetic interface not only in semiconductors but also in metals, organic and carbon-based materials including graphene, and in various spintronic device structures.Comment: Final version, with text restructured and appendices added (25 pages, 9 figures). To appear in Phys. Rev.

Computational-Mechanism Design: A Call to Arms

Game theory has developed several powerful tools for analyzing decision making in systems composed of multiple autonomous actors. Given this fact, AI practitioners would like to exploit these tools when building software systems containing multiple agents. However, to do this, the tools must be tailored to computational settings. To this end, the authors provide an overview of computational-mechanism design, which deals with the application of economic principles in computer systems design. Moreover, because many complex systems are inherently distributed, they also present initial results from the relatively new field of distributed-computational-mechanism design and outline the key challenges involved in making the ideas practicable.Engineering and Applied Science