On the linewidth enhancement factor alpha in semiconductor injection lasers

A simple model for the linewidth enhancement factor alpha and its frequency dependence in semiconductor lasers is presented. Calculations based on this model are in reasonable agreement with experimental results

Influence of retardation effects on 2D magnetoplasmon spectrum

Within dissipationless limit the magnetic field dependence of magnetoplasmon spectrum for unbounded 2DEG system found to intersect the cyclotron resonance line, and, then approaches the frequency given by light dispersion relation. Recent experiments done for macroscopic disc-shape 2DEG systems confirm theory expectations.Comment: 2 pages,2 figure

InGaAsP/InP undercut mesa laser with planar polyimide passivation

An undercut mesa laser is fabricated on an n + -InP substrate using a single step liquid phase epitaxy growth process and a planar structure is obtained by using a polyimide filling layer. The lasers operate at fundamental transverse mode due to a scattering loss mechanism. Threshold currents of 18 mA and stable single transverse mode operating at high currents are obtained

Direct measurement of the carrier leakage in an InGaAsP/InP laser

Carrier leakage over the heterobarrier in an InGaAsP/InP laser is measured directly in a laser-bipolar-transistor structure. Experimental results indicate a significant amount of carrier leakage under normal laser operating conditions

Low threshold InGaAsP terrace mass transport laser on semi-insulating substrate

Very low threshold InGaAsP terrace lasers on semi-insulating (SI) InP substrate have been fabricated using the mass transport technique. The fabrication process involves a single-step liquid phase epitaxial (LPE) growth followed by a mass transport of InP at ~675 °C in the presence of an InP cover wafer. Lasers operating in the fundamental transverse mode with smooth far-field patterns and threshold currents as low as 9.5 mA have been obtained

Very low threshold InGaAsP mesa laser

Very low threshold currents InGaAsP/InP terrace mesa (T-ME) lasers with an unpassivated surface have been fabricated on semi-insulating (SI) InP substrates. Fabrication of the lasers involves a single-step liquid phase epitaxial (LPE) growth and a simple etching process. Lasers operating in the fundamental transverse mode with threshold currents as low as 6.3 mA (for a cavity length of 250 μm) have been obtained. Comparison between the unpassivated lasers and those passivated using the mass transport technique is described

Probing neutrino mass hierarchies and ϕ13\phi_{13} with supernova neutrinos

We investigate the feasibility of probing the neutrino mass hierarchy and the mixing angle $\phi_{13}$ with the neutrino burst from a future supernova. An inverse power-law density $\rho \sim r^{n}$ with varying $n$ is adopted in the analysis as the density profile of a typical core-collapse supernova. The survival probabilities of $\nu_{e}$ and $\bar{\nu}_{e}$ are shown to reduce to two-dimensional functions of $n$ and $\phi_{13}$. It is found that in the $n-\sin^{2} \phi_{13}$ parameter space, the 3D plots of the probability functions exhibit highly non-trivial structures that are sensitive to the mass hierarchy, the mixing angle $\phi_{13}$, and the value of $n$. The conditions that lead to observable differences in the 3D plots are established. With the uncertainty of $n$ considered, a qualitative analysis of the Earth matter effect is also included.Comment: 16 pages, 3 figures. Ref [11] added, and some typos correcte