70,503 research outputs found

    Isobaric yield ratio difference between the 140 AA MeV 58,64^{58, 64}Ni + 9^{9}Be reactions studied by antisymmetric molecular dynamics model

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    \item[Background] The isobaric yield ratio difference (IBD) method is found to be sensitive to the density difference of neutron-rich nucleus induced reaction around the Fermi energy. \item[Purpose] An investigation is performed to study the IBD results in the transport model. \item[Methods] The antisymmetric molecular dynamics (AMD) model plus the sequential decay model GEMINI are adopted to simulate the 140AA MeV 58,64^{58, 64}Ni + 9^{9}Be reactions. A relative small coalescence radius Rc=_c = 2.5 fm is used for the phase space at t=t = 500 fm/c to form the hot fragment. Two limitations on the impact parameter (b1=02b1 = 0 - 2 fm and b2=09b2 = 0 - 9 fm) are used to study the effect of central collisions in IBD. \item[Results] The isobaric yield ratios (IYRs) for the large--AA fragments are found to be suppressed in the symmetric reaction. The IBD results for fragments with neutron-excess I=I = 0 and 1 are obtained. A small difference is found in the IBDs with the b1b1 and b2b2 limitations in the AMD simulated reactions. The IBD with b1b1 and b2b2 are quite similar in the AMD + GEMINI simulated reactions. \item[Conclusions] The IBDs for the I=I = 0 and 1 chains are mainly determined by the central collisions, which reflects the nuclear density in the core region of the reaction system. The increasing part of the IBD distribution is found due to the difference between the densities in the peripheral collisions of the reactions. The sequential decay process influences the IBD results. The AMD + GEMINI simulation can better reproduce the experimental IBDs than the AMD simulation.Comment: 6 pages, 5 figure

    Do local manufacturing firms benefit from transactional linkages with multinational enterprises in China?

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    This paper examines the linkage effects of foreign direct investment (FDI) on firm-level productivity in Chinese manufacturing. It is found that FDI generates positive vertical linkage effects in Chinese manufacturing at both the national and regional levels, and limited positive horizontal spillovers at the regional level. While OECD firms gain from both vertical and (probably) horizontal linkages, Hong Kong, Macao and Taiwanese firms benefit only from backward linkage effects. In the domestic sector, in which we are most interested, both state-owned enterprises (SOEs) and non-SOEs are hurt by competition from foreign firms in the same industries. While SOEs gain from vertical linkages with foreign firms, non-SOEs are unable to do so. The patterns of productivity spillovers from FDI in Chinese manufacturing seem to be determined by one key factor – the technological capabilities of the firms involved. Important data limitations and policy implications of this research are discussed

    Modeling the IDV emissions of the BL Lac Objects with a Langevin type stochastic differential equation

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    In this paper, we introduce a simplified model for explaining the observations of the optical intraday variability (IDV) of the BL Lac Objects. We assume that the source of the IDV are the stochastic oscillations of an accretion disk around a supermassive black hole. The Stochastic Fluctuations on the vertical direction of the accretion disk are described by using a Langevin type equation with a damping term and a random, white noise type force. Furthermore, the preliminary numerical simulation results are presented, which are based on the numerical analysis of the Langevin stochastic differential equation.Comment: 4 pages, 4 figures, accepted for publication in J. Astrophys. Ast

    Saturation of Spin-Polarized Current in Nanometer Scale Aluminum Grains

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    We describe measurements of spin-polarized tunnelling via discrete energy levels of single Aluminum grains. In high resistance samples (GΩ\sim G\Omega), the spin-polarized tunnelling current rapidly saturates as a function of the bias voltage. This indicates that spin-polarized current is carried only via the ground state and the few lowest in energy excited states of the grain. At the saturation voltage, the spin-relaxation rate T11T_1^{-1} of the highest excited states is comparable to the electron tunnelling rate: T111.5106s1T_1^{-1}\approx 1.5\cdot 10^6 s^{-1} and 107s110^7s^{-1} in two samples. The ratio of T11T_1^{-1} to the electron-phonon relaxation rate is in agreement with the Elliot-Yafet scaling, an evidence that spin-relaxation in Al grains is governed by the spin-orbit interaction.Comment: 5 pages, 4 figure
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