On the accuracy of Monte Carlo based beam dynamics models for the degrader in proton therapy facilities

In a cyclotron-based proton therapy facility, the energy changes are performed by means of a degrader of variable thickness. The interaction of the proton beam with the degrader creates energy tails and increases the beam emittance. A precise model of the degraded beam properties is important not only to better understand the performance of a facility already in operation, but also to support the development of new proton therapy concepts. The exact knowledge of the degraded beam properties, in terms of energy spectrum and transverse phase space, depends on the model used to describe the proton interaction with the degrader material. In this work the model of a graphite degrader has been developed with four Monte Carlo codes: three conventional Monte Carlo codes (FLUKA, GEANT4 and MCNPX) and the multi-purpose particle tracking code OPAL equipped with a simplified Monte Carlo routine. From the comparison between the different codes, we can deduce how the accuracy of the degrader model influences the precision of the beam dynamics model of a possible transport line downstream of the degrader

Electrical Detection of Spin Accumulation at a Ferromagnet-Semiconductor Interface

We show that the accumulation of spin-polarized electrons at a forward-biased Schottky tunnel barrier between Fe and n-GaAs can be detected electrically. The spin accumulation leads to an additional voltage drop across the barrier that is suppressed by a small transverse magnetic field, which depolarizes the spins in the semiconductor. The dependence of the electrical accumulation signal on magnetic field, bias current, and temperature is in good agreement with the predictions of a drift-diffusion model for spin-polarized transport.Comment: Submitted to Phys. Rev. Let

Perfectly Matched Layers in a Divergence Preserving ADI Scheme for Electromagnetics

For numerical simulations of highly relativistic and transversely accelerated charged particles including radiation fast algorithms are needed. While the radiation in particle accelerators has wavelengths in the order of 100 um the computational domain has dimensions roughly 5 orders of magnitude larger resulting in very large mesh sizes. The particles are confined to a small area of this domain only. To resolve the smallest scales close to the particles subgrids are envisioned. For reasons of stability the alternating direction implicit (ADI) scheme by D. N. Smithe et al. (J. Comput. Phys. 228 (2009) pp.7289-7299) for Maxwell equations has been adopted. At the boundary of the domain absorbing boundary conditions have to be employed to prevent reflection of the radiation. In this paper we show how the divergence preserving ADI scheme has to be formulated in perfectly matched layers (PML) and compare the performance in several scenarios.Comment: 8 pages, 6 figure

Lack of coupling between superconductivity and orthorhombic distortion in stoichiometric single-crystalline FeSe

The coupling between superconductivity and othorhombic distortion is studied in vapor-grown FeSe single crystals using high-resolution thermal-expansion measurements. In contrast to the Ba122-based (Ba122) superconductors, we find that superconductivity does not reduce the orthorhombicity below Tc. Instead we find that superconductivity couples strongly to the in-plane area, which explains the large hydrostatic pressure effects. We discuss our results in light of the spinnematic scenario and argue that FeSe has many features quite different from the typical Fe-based superconductors

Spin injection from perpendicular magnetized ferromagnetic δ\delta-MnGa into (Al,Ga)As heterostructures

Electrical spin injection from ferromagnetic $\delta$-MnGa into an (Al,Ga)As p-i-n light emitting diode (LED) is demonstrated. The $\delta$-MnGa layers show strong perpendicular magnetocrystalline anisotropy, enabling detection of spin injection at remanence without an applied magnetic field. The bias and temperature dependence of the spin injection are found to be qualitatively similar to Fe-based spin LED devices. A Hanle effect is observed and demonstrates complete depolarization of spins in the semiconductor in a transverse magnetic field.Comment: 4 pages, 3 figure

Intensity limits of the PSI Injector II cyclotron

We investigate limits on the current of the PSI Injector II high intensity separate-sector isochronous cyclotron, in its present configuration and after a proposed upgrade. Accelerator Driven Subcritical Reactors, neutron and neutrino experiments, and medical isotope production all benefit from increases in current, even at the ~ 10% level: the PSI cyclotrons provide relevant experience. As space charge dominates at low beam energy, the injector is critical. Understanding space charge effects and halo formation through detailed numerical modelling gives clues on how to maximise the extracted current. Simulation of a space-charge dominated low energy high intensity (9.5 mA DC) machine, with a complex collimator set up in the central region shaping the bunch, is not trivial. We use the OPAL code, a tool for charged-particle optics calculations in large accelerator structures and beam lines, including 3D space charge. We have a precise model of the present production) Injector II, operating at 2.2 mA current. A simple model of the proposed future (upgraded) configuration of the cyclotron is also investigated. We estimate intensity limits based on the developed models, supported by fitted scaling laws and measurements. We have been able to perform more detailed analysis of the bunch parameters and halo development than any previous study. Optimisation techniques enable better matching of the simulation set-up with Injector II parameters and measurements. We show that in the production configuration the beam current scales to the power of three with the beam size. However, at higher intensities, 4th power scaling is a better fit, setting the limit of approximately 3 mA. Currents of over 5 mA, higher than have been achieved to date, can be produced if the collimation scheme is adjusted

Growth and optical properties of GaN/AlN quantum wells

We demonstrate the growth of GaN/AlN quantum well structures by plasma-assisted molecular-beam epitaxy by taking advantage of the surfactant effect of Ga. The GaN/AlN quantum wells show photoluminescence emission with photon energies in the range between 4.2 and 2.3 eV for well widths between 0.7 and 2.6 nm, respectively. An internal electric field strength of $9.2\pm 1.0$ MV/cm is deduced from the dependence of the emission energy on the well width.Comment: Submitted to AP

Nucleation and Growth of GaN/AlN Quantum Dots

We study the nucleation of GaN islands grown by plasma-assisted molecular-beam epitaxy on AlN(0001) in a Stranski-Krastanov mode. In particular, we assess the variation of their height and density as a function of GaN coverage. We show that the GaN growth passes four stages: initially, the growth is layer-by-layer; subsequently, two-dimensional precursor islands form, which transform into genuine three-dimensional islands. During the latter stage, island height and density increase with GaN coverage until the density saturates. During further GaN growth, the density remains constant and a bimodal height distribution appears. The variation of island height and density as a function of substrate temperature is discussed in the framework of an equilibrium model for Stranski-Krastanov growth.Comment: Submitted to PRB, 10 pages, 15 figure