Large capacitance enhancement and negative compressibility of two-dimensional electronic systems at LaAlO3_3/SrTiO3_3 interfaces

Novel electronic systems forming at oxide interfaces comprise a class of new materials with a wide array of potential applications. A high mobility electron system forms at the LaAlO$_3$/SrTiO$_3$ interface and, strikingly, both superconducts and displays indications of hysteretic magnetoresistance. An essential step for device applications is establishing the ability to vary the electronic conductivity of the electron system by means of a gate. We have fabricated metallic top gates above a conductive interface to vary the electron density at the interface. By monitoring capacitance and electric field penetration, we are able to tune the charge carrier density and establish that we can completely deplete the metallic interface with small voltages. Moreover, at low carrier densities, the capacitance is significantly enhanced beyond the geometric capacitance for the structure. In the same low density region, the metallic interface overscreens an external electric field. We attribute these observations to a negative compressibility of the electronic system at the interface. Similar phenomena have been observed previously in semiconducting two-dimensional electronic systems. The observed compressibility result is consistent with the interface containing a system of mobile electrons in two dimensions.Comment: 4 figures in main text; 4 figures in the supplemen

Compressibility of a two-dimensional hole gas in tilted magnetic field

We have measured compressibility of a two-dimensional hole gas in p-GaAs/AlGaAs heterostructure, grown on a (100) surface, in the presence of a tilted magnetic field. It turns out that the parallel component of magnetic field affects neither the spin splitting nor the density of states. We conclude that: (a) g-factor in the parallel magnetic field is nearly zero in this system; and (b) the level of the disorder potential is not sensitive to the parallel component of the magnetic field

The Droplet State and the Compressibility Anomaly in Dilute 2D Electron Systems

We investigate the space distribution of carrier density and the compressibility of two-dimensional (2D) electron systems by using the local density approximation. The strong correlation is simulated by the local exchange and correlation energies. A slowly varied disorder potential is applied to simulate the disorder effect. We show that the compressibility anomaly observed in 2D systems which accompanies the metal-insulator transition can be attributed to the formation of the droplet state due to disorder effect at low carrier densities.Comment: 4 pages, 3 figure

Global quantum Hall phase diagram from visibility diagrams

We propose a construction of a global phase diagram for the quantum Hall effect. This global phase diagram is based on our previous constructions of visibility diagrams in the context of the Quantum Hall Effect. The topology of the phase diagram we obtain is in good agreement with experimental observations (when the spin effect can be neglected). This phase diagram does not show floating.Comment: LaTeX2e, 9 pages, 5 eps figure

Thermodynamic Signature of a Two-Dimensional Metal-Insulator Transition

We present a study of the compressibility, K, of a two-dimensional hole system which exhibits a metal-insulator phase transition at zero magnetic field. It has been observed that dK/dp changes sign at the critical density for the metal-insulator transition. Measurements also indicate that the insulating phase is incompressible for all values of B. Finally, we show how the phase transition evolves as the magnetic field is varied and construct a phase diagram in the density-magnetic field plane for this system.Comment: 4 pages, 4 figures, submitted to Physical Review Letters; version 1 is identical to version 2 but didn't compile properl

Universal flow diagram for the magnetoconductance in disordered GaAs layers

The temperature driven flow lines of the diagonal and Hall magnetoconductance data (G_{xx},G_{xy}) are studied in heavily Si-doped, disordered GaAs layers with different thicknesses. The flow lines are quantitatively well described by a recent universal scaling theory developed for the case of duality symmetry. The separatrix G_{xy}=1 (in units e^2/h) separates an insulating state from a spin-degenerate quantum Hall effect (QHE) state. The merging into the insulator or the QHE state at low temperatures happens along a semicircle separatrix G_{xx}^2+(G_{xy}-1)^2=1 which is divided by an unstable fixed point at (G_{xx},G_{xy})=(1,1).Comment: 10 pages, 5 figures, submitted to Phys. Rev. Let

Phase diagram of the integer quantum Hall effect in p-type Germanium

We experimentally study the phase diagram of the integer quantized Hall effect, as a function of density and magnetic field. We used a two dimensional hole system confined in a Ge/SiGe quantum well, where all energy levels are resolved, because the Zeeman splitting is comparable to the cyclotron energy. At low fields and close to the quantum Hall liquid-to-insulator transition, we observe the floating up of the lowest energy level, but NO FLOATING of any higher levels, rather a merging of these levels into the insulating state. For a given filling factor, only direct transitions between the insulating phase and higher quantum Hall liquids are observed as a function of density. Finally, we observe a peak in the critical resistivity around filling factor one.Comment: 4 pages, 4 figures, some changes in the tex

Metallic behavior and related phenomena in two dimensions

For about twenty years, it has been the prevailing view that there can be no metallic state or metal-insulator transition in two dimensions in zero magnetic field. In the last several years, however, unusual behavior suggestive of such a transition has been reported in a variety of dilute two-dimensional electron and hole systems. The physics behind these observations is presently not understood. We review and discuss the main experimental findings and suggested theoretical models.Comment: To be published in Rev. Mod. Phy

Absence of Floating Delocalized States in a Two-Dimensional Hole Gas

By tracking the delocalized states of the two-dimensional hole gas in a p-type GaAs/AlGaAs heterostructure as a function of magnetic field, we mapped out a phase diagram in the density-magnetic-field plane. We found that the energy of the delocalized state from the lowest Landau level flattens out as the magnetic field tends toward zero. This finding is different from that for the two-dimensional electron system in an n-type GaAs/AlGaAs heterostructure where delocalized states diverge in energy as B goes to zero indicating the presence of only localized states below the Fermi energy. The possible connection of this finding to the recently observed metal-insulator transition at B = 0 in the two-dimensional hole gas systems is discussed.Comment: 10 pages, 4 Postscript figures, To be published in Physical Review B (Rapid Communications) 58, Sept. 15, 199