Non-Gaussianity of resistance fluctuations near electrical breakdown

We study the resistance fluctuation distribution of a thin film near electrical breakdown. The film is modeled as a stationary resistor networkunder biased percolation. Depending on the value of the external current,on the system sizes and on the level of internal disorder, the fluctuation distribution can exhibit a non-Gaussian behavior. We analyze this non-Gaussianity in terms of the generalized Gumbel distribution recently introduced in the context of highly correlated systems near criticality. We find that when the average fraction of defects approaches the random percolation threshold, the resistance fluctuation distribution is well described by the universal behavior of the Bramwell-Holdsworth-Pinton distribution.Comment: 3 figures, accepted for publication on Semicond Sci Tec

Large mixing angle solution to the solar neutrino problem and random matter density perturbations

There are reasons to believe that mechanisms exist in the solar interior which lead to random density perturbations in the resonant region of the Large Mixing Angle solution to the solar neutrino problem. We find that, in the presence of these density perturbations, the best fit point in the (sin^2(2\theta), Delta_m^2) parameter space moves to smaller values, compared with the values obtained for the standard LMA solution. Combining solar data with KamLAND results, we find a new compatibility region, which we call VERY-LOW LMA, where sin^2(2\theta) ~ 0.6 and Delta_m^2~2e-5 eV^2, for random density fluctuations of order 5% < \xi< 8%. We argue that such values of density fluctuations are still allowed by helioseismological observations at small scales of order 10 - 1000 km deep inside the solar core.Comment: References and discussion added, with some small numerical corrections implemente

The role of topology in electrical properties of bacteriorhodopsin and rat olfactory receptor I7

We report on electrical properties of the two sensing proteins: bacteriorhodopsin and rat olfactory receptor OR-I7. As relevant transport parameters we consider the small-signal impedance spectrum and the static current-voltage characteristics. Calculations are compared with available experimental results and the model predictability is tested for future perspectives.Comment: 4 pages, 4 figure

Religious attitudes and home bias: theory and evidence from a pilot study

This paper examines the relationship between religion and home bias. We propose a simple theoretical framework that suggests that countries interacting via their representative individuals might show a certain degree of religion-driven international altruism that in turn affects trade. We test these predictions exploiting data from a survey on religious attitudes and individuals' preferences over consumption of home-produced versus foreign goods that we designed and carried out in 15 different countries. We find evidence that religious openness and home bias are negatively correlated. This appears to provide some support to the hypothesis that religious openness, through trust and altruism, may have a pro-trade effect.

Fluctuations of Complex Networks: Electrical Properties of Single Protein Nanodevices

We present for the first time a complex network approach to the study of the electrical properties of single protein devices. In particular, we consider an electronic nanobiosensor based on a G-protein coupled receptor. By adopting a coarse grain description, the protein is modeled as a complex network of elementary impedances. The positions of the alpha-carbon atoms of each amino acid are taken as the nodes of the network. The amino acids are assumed to interact electrically among them. Consequently, a link is drawn between any pair of nodes neighboring in space within a given distance and an elementary impedance is associated with each link. The value of this impedance can be related to the physical and chemical properties of the amino acid pair and to their relative distance. Accordingly, the conformational changes of the receptor induced by the capture of the ligand, are translated into a variation of its electrical properties. Stochastic fluctuations in the value of the elementary impedances of the network, which mimic different physical effects, have also been considered. Preliminary results concerning the impedance spectrum of the network and its fluctuations are presented and discussed for different values of the model parameters.Comment: 16 Pages and 10 Figures published in SPIE Proceedings of the II International Symposium on Fluctuation and Noise, Maspalomas,Gran Canaria,Spain, 25-28 May 200

Non-Gaussian Fluctuations in Biased Resistor Networks: Size Effects versus Universal Behavior

We study the distribution of the resistance fluctuations of biased resistor networks in nonequilibrium steady states. The stationary conditions arise from the competition between two stochastic and biased processes of breaking and recovery of the elementary resistors. The fluctuations of the network resistance are calculated by Monte Carlo simulations which are performed for different values of the applied current, for networks of different size and shape and by considering different levels of intrinsic disorder. The distribution of the resistance fluctuations generally exhibits relevant deviations from Gaussianity, in particular when the current approaches the threshold of electrical breakdown. For two-dimensional systems we have shown that this non-Gaussianity is in general related to finite size effects, thus it vanishes in the thermodynamic limit, with the remarkable exception of highly disordered networks. For these systems, close to the critical point of the conductor-insulator transition, non-Gaussianity persists in the large size limit and it is well described by the universal Bramwell-Holdsworth-Pinton distribution. In particular, here we analyze the role of the shape of the network on the distribution of the resistance fluctuations. Precisely, we consider quasi-one-dimensional networks elongated along the direction of the applied current or trasversal to it. A significant anisotropy is found for the properties of the distribution. These results apply to conducting thin films or wires with granular structure stressed by high current densities.Comment: 8 pages, 4 figures. Invited talk at the 18-th International Conference on Noise and Fluctuations, 19-23 September 2005, Salamanc

A Biased Resistor Network Model for Electromigration Failure and Related Phenomena in Metallic Lines

Electromigration phenomena in metallic lines are studied by using a biased resistor network model. The void formation induced by the electron wind is simulated by a stochastic process of resistor breaking, while the growth of mechanical stress inside the line is described by an antagonist process of recovery of the broken resistors. The model accounts for the existence of temperature gradients due to current crowding and Joule heating. Alloying effects are also accounted for. Monte Carlo simulations allow the study within a unified theoretical framework of a variety of relevant features related to the electromigration. The predictions of the model are in excellent agreement with the experiments and in particular with the degradation towards electrical breakdown of stressed Al-Cu thin metallic lines. Detailed investigations refer to the damage pattern, the distribution of the times to failure (TTFs), the generalized Black's law, the time evolution of the resistance, including the early-stage change due to alloying effects and the electromigration saturation appearing at low current densities or for short line lengths. The dependence of the TTFs on the length and width of the metallic line is also well reproduced. Finally, the model successfully describes the resistance noise properties under steady state conditions.Comment: 39 pages + 17 figure