High-performance pentacene thin-film transistor with ZrLaO gate dielectric passivated by fluorine incorporation

postprin

A low-frequency noise model with carrier generation-recombination process for pentacene organic thin-film transistor

published_or_final_versio

High-Performance Pentacene Thin-Film Transistor With High-κ HfLaON as Gate Dielectric

published_or_final_versio

High-mobility pentacene OTFT with TaLaO gate dielectric passivated by fluorine plasma

Pentacene thin-film transistor with high-κ TaLaO as gate dielectric has been fabricated and shows a carrier mobility of 0.73 cm2/V s, much higher than that based on pure La2O3 (0.43 cm2/V s) due to the smoother surface of the TaLaO film and thus larger pentacene islands grown on it in the initial stage. Moreover, among various times for fluorine-plasma treatment on the TaLaO gate dielectric, 100 seconds result in the highest carrier mobility of 1.12 cm2/V s due to (1) smoothest oxide surface achieved by fluorine passivation of oxide traps, as measured by AFM and supported by smallest sub-threshold swing and lowest low-frequency noise; (2) the largest pentacene grains grown on the smoothest oxide surface, as demonstrated by AFM. Pentacene islands on on TaLaO or La2O3 gate dielectric with different plasma treatment times.postprin

Effects of fluorine plasma and ammonia annealing on pentacene thin -film transistor with ZrLaOx as gate dielectric

Pentacene organic thin-film transistor (OTFT) based on ZrLaOx gate dielectric is proposed and has been fabricated. The effects of fluorine plasma and ammonia annealing on the properties of the OTFT have been studied. It reveals that the plasma treatment can greatly improve carrier mobility and shift the threshold voltage in the positive direction. With a threshold voltage less than 0.5 V, the OTFT can work at very low supply voltage. On the other hand, the ensuing ammonia annealing counteracts the plasma treatment and shifts the threshold voltage in the opposite direction. © 2012 IEEE.published_or_final_versio

Improved performance for OTFT with HfTiO2 as gate dielectric by N2O annealing

OTFTs with HfTiO 2 as gate dielectric have been successfully fabricated. The devices show small threshold voltage and subthreshold slope, and thus are suitable for low-voltage and low-power applications. This work also finds that OTFT with gate dielectric annealed in N 2O has larger dielectric constant, smaller threshold voltage, smaller subthreshold slope and larger on/off ratio than the N 2-annealed sample. This demonstrates that the N 2O annealing is an important surface treatment for preparing a high-quality insulator/organic interface. © 2007 IEEE.published_or_final_versio

Pentacene thin-film transistors with HfO2 gate dielectric annealed in NH3 or N2O

Pentacene-based Organic Thin-Film Transistor (OTFT) with HfO 2 as gate dielectric is studied in this work. The HfO2 dielectric was prepared by RF sputtering at room temperature, and subsequently annealed in N 2O or NH 3 at 200 °C. The OTFTs were characterized by IV measurement and 1/f noise measurement. The OTFTs show small threshold voltage and can operate at as low as 3 V. Results indicate that the OTFT annealed in NH 3 shows higher carrier mobility, larger on/off current ratio, smaller sub-threshold swing and smaller Hooge parameter than the OTFT annealed in N 2O. Therefore, NH 3-annealed HfO 2 is a promising gate dielectric for the fabrication of high-performance OTFTs. © 2008 IEEE.published_or_final_versio

Effects of fluorine plasma and ammonia annealing on pentacene thin-film transistor with HfTiO as gate dielectric

Pentacene organic thin-film transistor (OTFT) with high-K HffiO gate dielectric has been fabricated. The effects of fluorine plasma and ammonia annealing on the properties of the OTFT have been studied. After treating the dielectric in the plasma, the carrier mobility of the transistor can be improved by about 5 times to 0.0883 cm2/V•s. Moreover, the fluorine plasma treatment can shift the threshold voltage of the device in the positive direction. Experimental results also show that NH3 annealing can enhance the OTFT performance in terms of higher mobility, smaller sub-threshold slope and larger on/off ratio.published_or_final_versio

High-mobility pentacene thin-film transistor by using LaxTa(1-x)Oy as gate dielectric

Pentacene organic thin-film transistors (OTFTs) using LaxTa(1−x)Oy as gate dielectric with different La contents (x = 0.227, 0.562, 0.764, 0.883) have been fabricated and compared with those using Ta oxide or La oxide. The OTFT with La0.764Ta0.236Oy can achieve a carrier mobility of 1.21 cm2 V−1s−1s, which is about 40 times and two times higher than those of the devices using Ta oxide and La oxide, respectively. As supported by XPS, AFM and noise measurement, the reasons lie in that La incorporation can suppress the formation of oxygen vacancies in Ta oxide, and Ta content can alleviate the hygroscopicity of La oxide, resulting in more passivated and smoother dielectric surface and thus larger pentacene grains, which lead to higher carrier mobility.postprin

Association of anti-CLIC2 and anti-HMGB1 autoantibodies with higher disease activity in systemic lupus erythematosus patients

Systemic lupus erythematosus (SLE) is a systemic autoimmune disease characterized by numerous autoantibodies. In this study, we investigated the presence of anti-chloride intracellular channel 2 (anti-CLIC2) and anti-high mobility group box 1 (anti-HMGB1) autoantibodies in SLE patients (n = 43) versus healthy controls ([HCs] n = 43), and their association with serological parameters (antinuclear antibody [ANA], anti-double-stranded DNA [anti-dsDNA], and C-reactive protein [CRP]) and disease activity using Systemic Lupus Erythematosus Disease Activity Index (SLEDAI) score (active or inactive). Settings and Design: Case– control study at Rheumatology Clinic of Universiti Sains Malaysia Hospital. Subjects and Methods: The sera of SLE patients and HCs were tested for the presence of anti-CLIC2 and anti-HMGB1 autoantibodies using human recombinant proteins and ELISA methodologies. Other serological parameters were evaluated according to routine procedures, and patients' demographic and clinical data were obtained. Statistical Analysis: Mann– Whitney U-test, Chi-square test, Fisher's exact test, and receiver operating characteristic analysis. Results: Anti-CLIC2 autoantibody levels were significantly higher in SLE patients compared to HCs (P = 0.0035), whereas anti-HMGB1 autoantibody levels were not significantly elevated (P = 0.7702). Anti-CLIC2 and anti-HMGB1 autoantibody levels were not associated with ANA pattern, anti-dsDNA, and CRP. Interestingly, SLEDAI score (≥6) was associated with anti-CLIC2 (P = 0.0046) and with anti-HMGB1 (P = 0.0091) autoantibody levels. Conclusion: Our findings support the potential of using anti-CLIC2 autoantibodies as a novel biomarker for SLE patients. Both anti-CLIC2 and anti-HMGB1 autoantibody levels demonstrated potential in monitoring SLE disease activity