A Comparison of Veblen and Schumpeter on Technology

This paper aims at demonstrating the significance of two alternative approaches developed by Veblen and Schumpeter to technology underlying recent institutionalist and evolutionary stances. It should be mentioned that it is not the primary object of this paper to specify their clear-cut disagreement about the characterization of technology and the process of technical advance. Instead, it is engage with providing with an overall understanding of technological motion in capitalist accumulation processes by reconciling the two approaches in a meaningful way. Thus, this comparative analysis based upon their congruent and conflicting arguments presents us not only a general review and the solid foundations of an institutionalist approach to technological phenomena, but also an alternative conceptual framework for science and technology policy studies.

Selecting Undergraduate Business Majors

The paper begins with a brief review of the literature and how business students choose their major in the U.S. and we list the most popular majors in the U.S. Universities. We also talk about the factors that influenced student’s choice. In our next research project, we will not only use a larger sample size but also the sample will come from a few universities to reduce the sampling bias. In this paper, we also talk about changing trends in international students. We talk about the large group of Chinese, Indian, and Arabic students, and we show that with literature and graphical support. In the next section, we analyze one of the up and coming new business majors ―Business Analytics‖ We finish the paper with a discussion of growth of international students both at graduate and undergraduate level, and how we will address the shortcomings of this paper with our next project

Strained band edge characteristics from hybrid density functional theory and empirical pseudopotentials: GaAs, GaSb, InAs and InSb

The properties of a semiconductor get drastically modified when the crystal point group symmetry is broken under an arbitrary strain. We investigate the family of semiconductors consisting of GaAs, GaSb, InAs and InSb, considering their electronic band structure and deformation potentials subject to various strains based on hybrid density functional theory. Guided by these first-principles results, we develop strain-compliant local pseudopotentials for use in the empirical pseudopotential method (EPM). We demonstrate that the newly proposed empirical pseudopotentials perform well close to band edges and under anisotropic crystal deformations. Using EPM, we explore the heavy hole-light hole mixing characteristics under different stress directions which may be useful in manipulating their transport properties and optical selection rules. The very low 5 Ry cutoff targeted in the generated pseudopotentials paves the way for large-scale EPM-based electronic structure computations involving these lattice mismatched constituents.Comment: 13 pages, 7 figure

Disorder-free localization around the conduction band edge of crossing and kinked silicon nanowires

We explore ballistic regime quantum transport characteristics of oxide-embedded crossing and kinked silicon nanowires (NWs) within a large-scale empirical pseudopotential electronic structure framework, coupled to the Kubo-Greenwood transport analysis. A real-space wave function study is undertaken and the outcomes are interpreted together with the findings of ballistic transport calculations. This reveals that ballistic transport edge lies tens to hundreds of millielectron volts above the lowest unoccupied molecular orbital, with a substantial number of localized states appearing in between, as well as above the former. We show that these localized states are not due to the oxide interface, but rather core silicon-derived. They manifest the wave nature of electrons brought to foreground by the reflections originating from NW junctions and bends. Hence, we show that the crossings and kinks of even ultraclean Si NWs possess a conduction band tail without a recourse to atomistic disorder.Comment: Published version, 7 pages, 9 figure

Stark effect, polarizability and electroabsorption in silicon nanocrystals

Demonstrating the quantum-confined Stark effect (QCSE) in silicon nanocrystals (NCs) embedded in oxide has been rather elusive, unlike the other materials. Here, the recent experimental data from ion-implanted Si NCs is unambiguously explained within the context of QCSE using an atomistic pseudopotential theory. This further reveals that the majority of the Stark shift comes from the valence states which undergo a level crossing that leads to a nonmonotonic radiative recombination behavior with respect to the applied field. The polarizability of embedded Si NCs including the excitonic effects is extracted over a diameter range of 2.5--6.5 nm, which displays a cubic scaling, $\alpha=c D^3$, with $c=2.436\times 10^{-11}$ C/(Vm), where $D$ is the NC diameter. Finally, based on intraband electroabsorption analysis, it is predicted that p-doped Si NCs will show substantial voltage tunability, whereas n-doped samples should be almost insensitive. Given the fact that bulk silicon lacks the linear electro-optic effect as being a centrosymmetric crystal, this may offer a viable alternative for electrical modulation using p-doped Si NCs.Comment: Published version, 7 pages, 7 figure