Fabrication of photonic band-gap crystals

We describe the fabrication of three-dimensional photonic crystals using a reproducible and reliable procedure consisting of electron beam lithography followed by a sequence of dry etching steps. Careful fabrication has enabled us to define photonic crystals with 280 nm holes defined with 350 nm center to center spacings in GaAsP and GaAs epilayers. We construct these photonic crystals by transferring a submicron pattern of holes from 70-nm-thick polymethylmethacrylate resist layers into 300-nm-thick silicon dioxide ion etch masks, and then anisotropically angle etching the III-V semiconductor material using this mask. Here, we show the procedure used to generate photonic crystals with up to four lattice periods depth

Ballistic electron emission microscopy spectroscopy study of AlSb and InAs/AlSb superlattice barriers

Due to its large band gap, AlSb is often used as a barrier in antimonide heterostructure devices. However, its transport characteristics are not totally clear. We have employed ballistic electron emission microscopy (BEEM) to directly probe AlSb barriers as well as more complicated structures such as selectively doped n-type InAs/AlSb superlattices. The aforementioned structures were grown by molecular beam epitaxy on GaSb substrates. A 100 Å InAs or 50 Å GaSb capping layer was used to prevent surface oxidation from ex situ processing. Different substrate and capping layer combinations were explored to suppress background current and maximize transport of BEEM current. The samples were finished with a sputter deposited 100 Å metal layer so that the final BEEM structure was of the form of a metal/capping layer/semiconductor. Of note is that we have found that hole current contributed significantly to BEEM noise due to type II band alignment in the antimonide system. BEEM data revealed that the electron barrier height of Al/AlSb centered around 1.17 eV, which was attributed to transport through the conduction band minimum near the AlSb X point. Variation in the BEEM threshold indicated unevenness at the Al/AlSb interface. The metal on semiconductor barrier height was too low for the superlattice to allow consistent probing by BEEM spectroscopy. However, the superlattice BEEM signal was elevated above the background noise after repeated stressing of the metal surface. A BEEM threshold of 0.8 eV was observed for the Au/24 Å period superlattice system after the stress treatment

Nonperturbative model for optical response under intense periodic fields with application to graphene in a strong perpendicular magnetic field

Graphene exhibits extremely strong optical nonlinearity when a strong perpendicular magnetic field is applied, the response current shows strong field dependence even for moderate light intensity, and the perturbation theory fails. We nonperturbatively calculate full optical conductivities induced by a periodic field in an equation-of-motion framework based on the Floquet theorem, with the scattering described phenomenologically. The nonlinear response at high fields is understood in terms of the dressed electronic states, or Floquet states, which is further characterized by the optical conductivity for a weak probe light field. This approach is illustrated for a magnetic field at $5$ T and a driving field with photon energy $0.05$ eV. Our results show that the perturbation theory works only for weak fields $<3$ kV/cm, confirming the extremely strong light matter interaction for Landau levels of graphene. This approach can be easily extended to the calculation of optical conductivities in other systems

Effect of cylindrical geometry on the wet thermal oxidation of AlAs

We have investigated the wet thermal oxidation of AlAs in cylindrical geometry, a typical configuration for vertical-cavity surface-emitting lasers. Through both experiment and theoretical calculations, we demonstrate a significantly different time dependence for circular mesas from what has been reported in the literature both in studies of stripes and in a study of circular mesas. We attribute this different time dependence to the effect of geometry on the oxidation

Exclusive Baryonic B Decays Circa 2005

The status of exclusive two-body and three-body baryonic B decays is reviewed. The threshold enhancement effect in the dibaryon invariant mass and the angular distributions in the dibaryon rest frame are stressed and explained. Weak radiative baryonic B decays mediated by the electromagnetic penguin process $b\to s\gamma$ are discussed. Puzzles with the correlation observed in $B^-\to p\bar pK^-$ decay and the unexpectedly large rate observed for $B\to\Lambda_c\bar\Lambda_cK$ are examined. The former may indicate that the $p\bar p$ system is produced through some intermediate states, while the latter implies the failure of naive factorization for $\Lambda\bar\Lambda K$ modes and may hint at the importance of final-state rescattering effects.Comment: 21 pages, 9 figures, talk presented at 3rd International Conference on Flavor Physics, Oct 3-8, 2005, National Central Univ. Chung-li, Taiwa

Analytical smoothing effect of solution for the boussinesq equations

In this paper, we study the analytical smoothing effect of Cauchy problem for the incompressible Boussinesq equations. Precisely, we use the Fourier method to prove that the Sobolev H 1-solution to the incompressible Boussinesq equations in periodic domain is analytic for any positive time. So the incompressible Boussinesq equation admet exactly same smoothing effect properties of incompressible Navier-Stokes equations

Nonlinear magneto-optic effects in doped graphene and gapped graphene: a perturbative treatment

The nonlinear magneto-optic responses are investigated for gapped graphene and doped graphene in a perpendicular magnetic field. The electronic states are described by Landau levels, and the electron dynamics in an optical field is obtained by solving the density matrix in the equation of motion. In the linear dispersion approximation around the Dirac points, both linear conductivity and third order nonlinear conductivities are numerically evaluated for infrared frequencies. The nonlinear phenomena, including third harmonic generation, Kerr effects and two photon absorption, and four wave mixing, are studied. All optical conductivities show strong dependence on the magnetic field. At weak magnetic fields, our results for doped graphene agree with those in the literature. We also present the spectra of the conductivities of gapped graphene. At strong magnetic fields, the third order conductivities show peaks with varying the magnetic field and the photon energy. These peaks are induced by the resonant transitions between different Landau levels. The resonant channels, the positions, and the divergences of peaks are analyzed. The conductivities can be greatly modified, up to orders of magnitude. The dependence of the conductivities on the gap parameter and the chemical potential is studied.Comment: 18 pages, 8 figure