An analytical model for the threshold voltage of a narrow-width MOSFET

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Electrical properties of different NO-annealed oxynitrides

This journal issues contain proceedings of the 2nd International Conference on Amorphous and Crystalline Insulating Thin Films II ... 1998Performances of gate dielectrics prepared by double-nitridation in NO and N2O are investigated. Stronger oxide/Si interface bonding, less charge trapping and larger charge-to-breakdown are observed for such gate dielectrics than singly NO-nitrided gate dielectric. The physical mechanisms behind the findings are attributed to larger nitrogen peak concentration located almost at the oxide/Si interface and total nitrogen content near the oxide/Si interface of these gate dielectrics.postprin

Epidemiological updates of venous thromboembolism in a Chinese population

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Effectiveness of proximal intra-operative salvage Palmaz stent placement for endoleak during endovascular aneurysm repair

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Angioplasty of forearm arteries as a finger salvage procedure for patient with end-stage renal failure

Case Reportpublished_or_final_versio

Improvement on 1/f noise properties of nitrided n-MOSFET's by backsurface argon bombardment

The 1/f noise properties of nitrided n-MOSFET's bombarded by low-energy (550 eV) argon-ion beam are investigated. It is found that after bombardment, 1/f noise, and its degradation under hot-carrier stress are reduced, and both exhibit a turnaround behavior with bombardment time for a given ion energy and intensity. The physical mechanism involved is probably enhanced interface hardness resulting from bombardment-induced stress relief in the vicinity of the oxide/Si interface. Moreover, from the frequency dependence of the noise, it is revealed that the nitrided devices have a nonuniform trap distribution increasing toward the oxide/Si interface which can be modified by the backsurface bombardment.published_or_final_versio

Interface properties of NO-annealed N2O-grown oxynitride

The oxide/Si interface properties of gate dielectric prepared by annealing N2O-grown oxide in an NO ambient are intensively investigated and compared to those of O2-grown oxide with the same annealing conditions. Hot-carrier stressings show that the former has a harder oxide/Si interface and near-interface oxide than the latter. As confirmed by SIMS analysis, this is associated with a higher nitrogen peak concentration near the oxide/Si interface and a larger total nitrogen content in the former, both arising from the initial oxidation in N2O instead of O2.published_or_final_versio

Dynamic-stress-induced enhanced degradation of 1/f noise in n-MOSFET's

AC-stress-induced degradation of 1/f noise is investigated for n-MOSFET's with thermal oxide or nitrided oxide as gate dielectric, and the physical mechanisms involved are analyzed. It is found that the degradation of 1/f noise under ac stress is far more serious than that under dc stress. For an ac stress of VG = 0 approx. 0.5 VD, generations of both interface state (ΔDit) and neutral electron traps (ΔNet) are responsible for the increase of 1/f noise, with the former being dominant. For another ac stress of VG = 0 approx. VD, a large increase of 1/f noise is observed for the thermal-oxide device, and is attributed to enhanced ΔNet and generation of another specie of electron traps, plus a small amount of ΔDit. Moreover, under the two types of ac stress conditions, much smaller degradation of 1/f noise is observed for the nitrided device due to considerably improved oxide/Si interface and near-interface oxide qualities associated with interfacial nitrogen incorporation.published_or_final_versio

Quality improvement of low-pressure chemical-vapor-deposited oxide by N2O nitridation

Quality of low-pressure chemical-vapor-deposited (LPCVD) oxide and N2O-nitrided LPCVD (LN2ON) oxide is investigated under high-field stress conditions as compared to thermal oxide. It is found that LPCVD oxide has lower midgap interface-state density Dit-m and smaller stress-induced Dit-m increase than thermal oxide, but exhibits enhanced electron trapping rate and degraded charge-to-breakdown characteristics, which, however, are significantly suppressed in LN2ON oxide, suggesting effective elimination of hydrogen-related species. Moreover, LN2ON oxide shows further improved Si/SiO2 interface due to interfacial nitrogen incorporation. © 1997 American Institute of Physics.published_or_final_versio

Infectious anastomotic pseudoaneurysm complicating renal allograft: case report and review of literature

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