The engineering of BSIM for the nano-technology era and beyond

This paper presents the current status of the forth generation BSIM model and issues of modeling CMOS based devices with nanometer dimensions. Due to the divergence of device structures in sub-0.1μm gate length, it is more and more difficult to describe the device physics accurately and efficiently. In order to have a practical model with enough flexibility to accommodate a wide variety of technologies, vigorous engineering techniques have to be incorporated. At the same time, modern computer program techniques including numerical differentiation and parallel model evaluation are considered to shorten model development time. The tradeoffs between computation efficiency and development time will be discussed. Methodologies to design next generation extendible device models with advanced computer programming techniques are proposed

Approaches and options for modeling sub-0.1 /spl mu/m CMOS devices

This paper attempts to provide a general guideline to develop a practical model for MOSFETs in the sub 0,1 μm generations. It starts by giving an overview of the different modeling approaches and options including charge based approach, surface potential based approach, and conductance based approach. Their relative advantages and weaknesses will be discussed. The evolution of the BSIM models from its first generation to the most recent release will be used as an example for the development of a practical device model. It will be followed by a discussion on how the accelerated technology development may impact the traditional modeling approaches. A new paradigm to incorporate modem software engineering methodology to shorten model development cycle will be presented. © 2002 IEEE

A dicyanoisophorone-based fluorescent probe for hypochlorite with a fast response and its applications in bioimaging

We synthesized a phenol-substituted dicyanoisophorone derivative, Is-OL, which has high sensitivity and selectivity for ClO− and allows “naked-eye” detection of hypochlorite with a low detection limit (0.095 μM).</jats:p

A Physics Based Analytical Model of Undoped Body MOSFETs

A continuous physics based analytic model of undoped (or lightly doped) body MOSFETs has been derived in this paper by incorporating the solution of the Poisson equation into Pao-Sah integrated current equation using SPP approach. The closed form solutions of band bending and the inversion charge as a function of gate voltage and channel voltage were first derived from the combination of Gauss's law with the Poisson equation. Then, a continuous non-charge-sheet-based analytical model is developed for the undoped body MOSFETs. © 2004 IEEE