Biotechnology and Plant Productivity

Author Institution: Dept. of Biology, Case Western Reserve UniversityThere is considerable potential for the application of biotechnology and genetic engineering to plant productivity. The basic manipulations for the isolation of genes and their transfer between species are well documented in model systems. However, more information is required concerning the basic processes governing plant productivity at the molecular level before practical applications can be achieved. In this paper, detailed consideration is given to (1) the use of restriction fragment polymorphisms as genetic markers, and (2) the molecular basis of hybrid vigor. In both cases it is clear that these techniques will be adjuncts to the already established methods for plant improvement but with far reaching potential for the future

Optimizing Umkehr Ozone Profile Retrievals

NOAA Dobson Umkehr ozone profile records have been collected since the 1970s. Umkehr ozone profiles are used to monitor stratospheric ozone recovery predicted to occur by the 2050s. Current operational Dobson Umkehr profile algorithms produce data that have uncertainty on the order of ~ 5 % in the stratosphere. However, when large volcanic eruptions inject aerosols into the stratosphere, the errors can be as large as 70 %. In order to evaluate Umkehr records for aerosol-related and instrumental artifacts, we compare observations with a Hindcast simulation of the NASA Merra-2 Global Modeling Initiative (GMI) Replay (M2GMI, Orbe et al, 2017; Wargan et al, 2018) and Chemistry Transport Model (GMI CTM, Strahan et al, 2013, Strahan et al, 2016). The biases found between the models and observations are summarized for each Dobson calibration and volcanic eruption period, thus providing a reference tool for homogenization of the Umkehr time series and removal of volcanic aerosol errors

Interwell relaxation times in p-Si/SiGe asymmetric quantum well structures: the role of interface roughness

We report the direct determination of nonradiative lifetimes in Si∕SiGe asymmetric quantum well structures designed to access spatially indirect (diagonal) interwell transitions between heavy-hole ground states, at photon energies below the optical phonon energy. We show both experimentally and theoretically, using a six-band k∙p model and a time-domain rate equation scheme, that, for the interface quality currently achievable experimentally (with an average step height ⩾1 Å), interface roughness will dominate all other scattering processes up to about 200 K. By comparing our results obtained for two different structures we deduce that in this regime both barrier and well widths play an important role in the determination of the carrier lifetime. Comparison with recently published experimental and theoretical data obtained for mid-infrared GaAs∕AlxGa1−xAs multiple quantum well systems leads us to the conclusion that the dominant role of interface roughness scattering at low temperature is a general feature of a wide range of semiconductor heterostructures not limited to IV-IV material

Seventy years of sex education in Health Education Journal: a critical review

This paper examines key debates and perspectives on sex education in Health Education Journal (HEJ), from the date of the journal’s first publication in March 1943 to the present day. Matters relating to sexuality and sexual health are revealed to be integral to HEJ’s history. First published as Health and Empire (1921 – 1942), a key purpose of the journal since its inception has been to share information on venereal disease and its prevention within the UK and across the former British Empire. From 1943 to the present day, discussions on sex education in the newly-christened HEJ both reflect and respond to evolving socio-cultural attitudes towards sexuality in the UK. Changing definitions of sex education across the decades are examined, from the prevention of venereal disease and moral decline in war-time Britain in the 1940s, to a range of responses to sexual liberation in the 1960s and 1970s; from a focus on preventing sexually-transmitted infections, teenage pregnancy and HIV in the 1980s, to the provision of sexual health services alongside sex education in the 2000s. Over the past 70 years, a shift from prevention of pre-marital sexual activity to the management of its outcomes is apparent; however, while these changes over time are notable, perhaps the most striking findings of this review are the continuities in arguments for and against the discussion of sexual issues. After more than 70 years of debate, it would seem that there is little consensus concerning motivations for and the content of sex education

Thermal effects on electron-phonon interaction in silicon nanostructures

Raman spectra from silicon nanostructures, recorded using excitation laser power density of 1.0 kW/cm^2, is employed here to reveal the dominance of thermal effects at temperatures higher than the room temperature. Room temperature Raman spectrum shows only phonon confinement and Fano effects. Raman spectra recorded at higher temperatures show increase in FWHM and decrease in asymmetry ratio with respect to its room temperature counterpart. Experimental Raman scattering data are analyzed successfully using theoretical Raman line-shape generated by incorporating the temperature dependence of phonon dispersion relation. Experimental and theoretical temperature dependent Raman spectra are in good agreement. Although quantum confinement and Fano effects persists, heating effects start dominating at higher temperatures than room tempaerature.Comment: 9 Pages, 3 Figures and 1 Tabl

The Morphology and Misfit Dislocation Formation Characteristics of Strained Heteroepitaxial Layers: Ex Situ and In Situ Growth Studies

Under certain regimes of heteroepitaxial layer growth, misfit stresses can lead to very significant distortions in interface morphology, which can influence strain relief and subsequent misfit dislocation introduction. These phenomena have been clearly demonstrated in the case of SiGe/Si heteroepitaxy and the way in which surface SiGe growth ripples are accompanied by strain waves has been established. The ripples provide partial elastic relief of the layer misfit stress in a manner which has been correlated with theoretical expectations. The local stress variations ultimately may influence the formation and disposition of misfit dislocations in the strained layer structures. The present paper reviews primarily our understanding of these growth characteristics. It also outlines current in situ synchrotron growth studies which exploit real-time X-ray topography and diffraction to probe heteroepitaxial strain-relief processes

Global impacts of energy demand on the freshwater resources of nations

The growing geographic disconnect between consumption of goods, the extraction and processing of resources, and the environmental impacts associated with production activities makes it crucial to factor global trade into sustainability assessments. Using an empirically validated environmentally extended global trade model, we examine the relationship between two key resources underpinning economies and human well-being—energy and freshwater. A comparison of three energy sectors (petroleum, gas, and electricity) reveals that freshwater consumption associated with gas and electricity production is largely confined within the territorial boundaries where demand originates. This finding contrasts with petroleum, which exhibits a varying ratio of territorial to international freshwater consumption, depending on the origin of demand. For example, although the United States and China have similar demand associated with the petroleum sector, international freshwater consumption is three times higher for the former than the latter. Based on mapping patterns of freshwater consumption associated with energy sectors at subnational scales, our analysis also reveals concordance between pressure on freshwater resources associated with energy production and freshwater scarcity in a number of river basins globally. These energy-driven pressures on freshwater resources in areas distant from the origin of energy demand complicate the design of policy to ensure security of fresh water and energy supply. Although much of the debate around energy is focused on greenhouse gas emissions, our findings highlight the need to consider the full range of consequences of energy production when designing policy

Spectroscopic investigation of quantum confinement effects in ion implanted silicon-on-sapphire films

Crystalline Silicon-on-Sapphire (SOS) films were implanted with boron (B$^+$) and phosphorous (P$^+$) ions. Different samples, prepared by varying the ion dose in the range $10^{14}$ to 5 x $10^{15}$ and ion energy in the range 150-350 keV, were investigated by the Raman spectroscopy, photoluminescence (PL) spectroscopy and glancing angle x-ray diffraction (GAXRD). The Raman results from dose dependent B$^+$ implanted samples show red-shifted and asymmetrically broadened Raman line-shape for B$^+$ dose greater than $10^{14}$ ions cm$^{-2}$. The asymmetry and red shift in the Raman line-shape is explained in terms of quantum confinement of phonons in silicon nanostructures formed as a result of ion implantation. PL spectra shows size dependent visible luminescence at $\sim$ 1.9 eV at room temperature, which confirms the presence of silicon nanostructures. Raman studies on P$^+$ implanted samples were also done as a function of ion energy. The Raman results show an amorphous top SOS surface for sample implanted with 150 keV P$^+$ ions of dose 5 x $10^{15}$ ions cm$^{-2}$. The nanostructures are formed when the P$^+$ energy is increased to 350 keV by keeping the ion dose fixed. The GAXRD results show consistency with the Raman results.Comment: 9 Pages, 6 Figures and 1 Table, \LaTex format To appear in SILICON(SPRINGER