AC Josephson Effect Induced by Spin Injection

Pure spin currents can be injected and detected in conductors via ferromagnetic contacts. We consider the case when the conductors become superconducting. A DC pure spin current flowing in one superconducting wire towards another superconductor via a ferromagnet contact induces AC voltage oscillations caused by Josephson tunneling of condensate electrons. Quasiparticles simultaneously counterflow resulting in zero total electric current through the contact. The Josephson oscillations can be accompanied by Carlson-Goldman collective modes leading to a resonance in the voltage oscillation amplitude.Comment: 5 page

On a Possibility to Measure Thermoelectric Power in SNS Structures

Two dissimilar Josephson junctions, which are connected to a heater can act as precise batteries. Because of the difference in thermoelectric power of these batteries, circuit with two dissimilar batteries, under heat flow $\Delta T\sim 10^{-5}K$ would have a net EMF $10^{-11} V$ around the zero-resistance loop leading to a loop's magnetic flux oscillating in time. It is shown its theoretical value is proportional to both the temperature difference as well as the disparity in the thermoelectric powers of the two junctions.Comment: 5 page

Multi-subband effect in spin dephasing in semiconductor quantum wells

Multi-subband effect on spin precession and spin dephasing in $n$-type GaAs quantum wells is studied with electron-electron and electron-phonon scattering explicitly included. The effects of temperature, well width and applied electric field (in hot-electron regime) on the spin kinetics are thoroughly investigated. It is shown that due to the strong inter-subband scattering, the spin procession and the spin dephasing rate of electrons in different subbands are almost identical despite the large difference in the D'yakonov-Perel' (DP) terms of different subbands. It is also shown that for quantum wells with small well width at temperatures where only the lowest subband is occupied, the spin dephasing time increases with the temperature as well as the applied in-plane electric field until the contribution from the second subband is no longer negligible. For wide quantum wells the spin dephasing time tends to decrease with the temperature and the electric field.Comment: 6 pages, 4 figures in eps forma

Drift-diffusion model for spin-polarized transport in a non-degenerate 2DEG controlled by a spin-orbit interaction

We apply the Wigner function formalism to derive drift-diffusion transport equations for spin-polarized electrons in a III-V semiconductor single quantum well. Electron spin dynamics is controlled by the linear in momentum spin-orbit interaction. In a studied transport regime an electron momentum scattering rate is appreciably faster than spin dynamics. A set of transport equations is defined in terms of a particle density, spin density, and respective fluxes. The developed model allows studying of coherent dynamics of a non-equilibrium spin polarization. As an example, we consider a stationary transport regime for a heterostructure grown along the (0, 0, 1) crystallographic direction. Due to the interplay of the Rashba and Dresselhaus spin-orbit terms spin dynamics strongly depends on a transport direction. The model is consistent with results of pulse-probe measurement of spin coherence in strained semiconductor layers. It can be useful for studying properties of spin-polarized transport and modeling of spintronic devices operating in the diffusive transport regime.Comment: 16 pages, 3 figure

Restrictions on modeling spin injection by resistor networks

Because of the technical difficulties of solving spin transport equations in inhomogeneous systems, different resistor networks are widely applied for modeling spin transport. By comparing an analytical solution for spin injection across a ferromagnet - paramagnet junction with a resistor model approach, its essential limitations stemming from inhomogeneous spin populations are clarified.Comment: To be published in a special issue of Semicond. Sci. Technol., Guest editor Prof. G. Landweh

Data Structures for Halfplane Proximity Queries and Incremental Voronoi Diagrams

We consider preprocessing a set $S$ of $n$ points in convex position in the plane into a data structure supporting queries of the following form: given a point $q$ and a directed line $\ell$ in the plane, report the point of $S$ that is farthest from (or, alternatively, nearest to) the point $q$ among all points to the left of line $\ell$. We present two data structures for this problem. The first data structure uses $O(n^{1+\varepsilon})$ space and preprocessing time, and answers queries in $O(2^{1/\varepsilon} \log n)$ time, for any $0 < \varepsilon < 1$. The second data structure uses $O(n \log^3 n)$ space and polynomial preprocessing time, and answers queries in $O(\log n)$ time. These are the first solutions to the problem with $O(\log n)$ query time and $o(n^2)$ space. The second data structure uses a new representation of nearest- and farthest-point Voronoi diagrams of points in convex position. This representation supports the insertion of new points in clockwise order using only $O(\log n)$ amortized pointer changes, in addition to $O(\log n)$-time point-location queries, even though every such update may make $\Theta(n)$ combinatorial changes to the Voronoi diagram. This data structure is the first demonstration that deterministically and incrementally constructed Voronoi diagrams can be maintained in $o(n)$ amortized pointer changes per operation while keeping $O(\log n)$-time point-location queries.Comment: 17 pages, 6 figures. Various small improvements. To appear in Algorithmic

Current-Induced Polarization and the Spin Hall Effect at Room Temperature

Electrically-induced electron spin polarization is imaged in n-type ZnSe epilayers using Kerr rotation spectroscopy. Despite no evidence for an electrically-induced internal magnetic field, current-induced in-plane spin polarization is observed with characteristic spin lifetimes that decrease with doping density. The spin Hall effect is also observed, indicated by an electrically-induced out-of-plane spin polarization with opposite sign for spins accumulating on opposite edges of the sample. The spin Hall conductivity is estimated as 3 +/- 1.5 Ohms**-1 m**-1/|e| at 20 K, which is consistent with the extrinsic mechanism. Both the current-induced spin polarization and the spin Hall effect are observed at temperatures from 10 K to 295 K.Comment: 5 pages, 4 figure