Photoionization of the Ne-like Si4+ ion in ground and metastable states in the 110–184-eV photon energy range

We present measurements of the absolute photoionization cross section of the neonlike Si4+ ion over the 110–184 eV photon energy range. The measurements were performed using two independent merged-beam setups at the super-ACO and ASTRID synchrotron-radiation facilities, respectively. Signals produced in the photoionization of the 2p subshell of the Si4+ ion both from the 2p6 1S0 ground state and the 2p53s 3P0,2 metastable levels were observed. Calculations of the 2p photoionization cross sections were carried out using a multi-configuration Dirac-Fock code. They give results in good agreement with the measured spectra. Comparison with other available theoretical results is also presented

State-resolved valence shell photoionization of Be-like ions: experiment and theory

High-resolution photoionization experiments were carried out using beams of Be-like C$^{2+}$, N$^{3+}$, and O$^{4+}$ ions with roughly equal populations of the $^1$S ground-state and the $^3$P$^o$ manifold of metastable components. The energy scales of the experiments are calibrated with uncertainties of 1 to 10 meV depending on photon energy. Resolving powers beyond 20,000 were reached allowing for the separation of contributions from the individual metastable $^3$P$^o_0$, $^3$P$^o_1$, and $^3$P$^o_2$ states. The measured data compare favourably with semi-relativistic Breit-Pauli R-matrixComment: 23 figures and 3 table

Photoionization of the Be isoelectronic sequence: total cross sections

The photoionization of the four-electron beryllium-like isoelectronic series from the neutral to Fe^{+22} has been studied for ground ^1S and metastable ^3P initial states. The wave functions of the final-state (target) ions were built using the CIV3 code. Both nonrelativistic LS-coupling R-matrix and relativistic Breit-Pauli (BP) R-matrix methods were used to calculate the cross sections in the photon-energy range between the first ionization threshold and the 1s^2 4f_{7/2} threshold for each ion. Our total cross sections compare well with experiment which is available for Be, B^+, C^{+2}, N^{+3}, and O^{+4}. The agreement between the present work and previous calculations is discussed in detail. The importance of relativistic effects is seen by the comparison between the LS and the BP results.Comment: 45 pages, 3 tables, 22 figure

Absolute photoionization cross sections and resonance structure of doubly ionized silicon in the region of the 2p-1 threshold: experiment and theory

We present the absolute photoionization cross section of doubly ionized silicon as a function of photon energy. These were obtained by merging a Si2+ ion beam generated in an electron cyclotron resonance source with monochromatized synchrotron radiation from an undulator. The photoion yield measurements were carried out in the photon energy range between 95 eV and 170 eV, i.e., the region corresponding to the excitation followed by the ionization (threshold ∼133.8eV) of an inner-subshell 2p electron. Resonance structure due to 2p excitation in the 2p63s3p3P metastable state was also observed with its contribution to the total cross section not exceeding 3%. Calculation of the 2p photoionization continuum cross section as a function of photon energy was carried out using the relativistic random-phase approximation (RRPA) and agreed very well with the corresponding measurements. The resonance structure in the 3s cross section below the 2p threshold was found to be in good agreement with the multiconfiguration atomic structure calculations of Sayyad et al. [J. Phys. B 28, 1715 (1995)], while the corresponding RRPA-RMQDT (relativistic multi-channel quantum-defect theory) calculations proved less successful

Patterning light emitting porous silicon using helium beam irradiation

ABSTRACT High energy helium beam has been utilized to pattern silicon prior to electrochemical etching in hydrofluoric acid. Photoluminescence (PL) studies carried out on medium resistivity silicon showed that the PL wavelength of the irradiated regions is continuously red-shifted by up to 150 nm with increasing dose. On the lower resistivity silicon, the intensity is shown to increase by more than twenty times with dose. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) have been used to determine the surface morphology of the irradiated structure. This technique is potentially important for producing an integrated silicon based optoelectronic device

Fabrication of patterned porous silicon using high-energy ion irradiation

Abstract P-type silicon has been patterned using highenergy protons beam prior to electrochemical etching in hydrofluoric acid. The ion beam selectively damages the silicon lattice, resulting in an increase in the local resistivity of the irradiated regions. It is found that the photoluminescence intensity of the irradiated regions increases with proton irradiation into a 0.02 .cm resistivity p-type silicon. By immersing the etched sample into potassium hydroxide, the porous silicon is removed to reveal the underlying three-dimensional structure of the patterned area