Sol-Gel Growth of High-Quality Pb(Zr,Ti)O₃ Films on RUO₂ Using Seed Layers

AbstractNew approaches for improving fatigue performance of sol-gel PZT based ferroelectric capacitors with RuO2 electrodes are discussed. The use of thin (∼5 nm) high-Ti PZT seed layer was found to be effective for improving fatigue performance. For an optimized seedlayer thickness, FECAPs with excellent fatigue characteristics (less than 10% decrease in Pr after 1011 cycles) were obtained.</jats:p

The Role of Precursor Chemistry in the Ferroelectric Properties of Donor Doped Pb(Zr,Ti)O₃ Thin Films

AbstractModified sol-gel processes have been developed for the preparation of precursor solutions of undoped, La and Ta doped PZT (25/75). These processes use different solvents (methoxyethanol, butoxyethanol) and different lead sources (lead acetate, lead oxide). Due to variations in the structure and in the composition of the solutions, significantly different thermal decomposition behaviors were found. These inevitably affected texture and microstructure of the sol-gel derived thin films, demonstrating the important role of precursor chemistry in the improvement of film properties. In the case of tantalum doped Pt/PZT/Pt ferroelectric capacitors a rectangular hysteresis loop, featuring high Pr, was obtained for one specific precursor chemistry.</jats:p