Proposal for a Topological Plasmon Spin Rectifier

We propose a device in which the spin-polarized AC plasmon mode in the surface state of a topological insulator nanostructure induces a static spin accumulation in a resonant, normal metal structure coupled to it. Using a finite-difference time-domain model, we simulate this spin-pump mechanism with drift, diffusion, relaxation, and precession in a magnetic field. This optically-driven system can serve as a DC "spin battery" for spintronic devices.Comment: Eq. 1 corrected; Figs 3 and 4 update

Atomic structure of Mn wires on Si(001) resolved by scanning tunneling microscopy

At submonolayer coverage, Mn forms atomic wires on the Si(001) surface oriented perpendicular to the underlying Si dimer rows. While many other elements form symmetric dimer wires at room temperature, we show that Mn wires have an asymmetric appearance and pin the Si dimers nearby. We find that an atomic configuration with a Mn trimer unit cell can explain these observations due to the interplay between the Si dimer buckling phase near the wire and the orientation of the Mn trimer. We study the resulting four wire configurations in detail using high-resolution scanning tunneling microscopy (STM) imaging and compare our findings with STM images simulated by density functional theory.Comment: 4 pages, 4 figure

Radiative Corrections to Longitudinal and Transverse Gauge Boson and Higgs Production

Radiative corrections to gauge boson and Higgs production computed recently using soft-collinear effective theory (SCET) require the one-loop high-scale matching coefficients in the standard model. We give explicit expressions for the matching coefficients for the effective field theory (EFT) operators for q qbar -> VV and q qbar -> phi^+ phi for a general gauge theory with an arbitrary number of gauge groups. The group theory factors are given explicitly for the standard model, including both QCD and electroweak corrections.Comment: 16 pages, 49 figure

Multiple layer local oxidation for fabricating semiconductor nanostructures

Coupled semiconductor nanostructures with a high degree of tunability are fabricated using local oxidation with a scanning force microscope. Direct oxidation of the GaAs surface of a Ga[Al]As heterostructure containing a shallow two-dimensional electron gas is combined with the local oxidation of a thin titanium film evaporated on top. A four-terminal quantum dot and a double quantum dot system with integrated charge readout are realized. The structures are tunable via in-plane gates formed by isolated regions in the electron gas and by mutually isolated regions of the Ti film acting as top gates. Coulomb blockade experiments demonstrate the high quality of this fabrication process.Comment: 3 pages, 3 figure